Infineon Technologies IR21141SSTRPBF

Overview

IR21141SSTRPBF from Infineon Technologies (formerly International Rectifier) is a high-voltage half-bridge gate driver IC designed for IGBT and MOSFET power stages in motor drives and inverters. It features 600 V or 1200 V floating channel capability, 2 A source / 3 A sink output drive, integrated desaturation detection, soft shutdown, and matched propagation delays (±75 ns max deadtime mismatch). It operates with independent UVLO on both high-side (VB–VS) and low-side (VCC) supplies and supports bootstrap power supply architectures.

For engineers reviewing the IR21141SSTRPBF datasheet, IR21141SSTRPBF pinout, IR21141SSTRPBF application, or IR21141SSTRPBF equivalent, key selection criteria include desat blanking time (3 µs typ), soft shutdown duration (9.25 µs typ), dual-stage turn-on for di/dt control, separate pull-up/pull-down output pins, and 3.3 V-compatible fault signaling via FAULT/SD and SY_FLT.

Technical Context

The IR21141SSTRPBF implements a dual-channel, isolated high-side/low-side driver with dedicated desaturation sensing inputs (DSH/DSL) tied to internal comparators with 1 V hysteresis and 3 µs blanking. Its two-stage turn-on logic delivers initial 2 A peak current followed by sustained 1 A drive, enabling controlled IGBT di/dt during hard-switching transients.

It uses independent ground references (VSS for high-side logic, COM for low-side/power ground), enabling emitter-current sensing and noise immunity against DC-bus dv/dt up to 50 V/ns. Fault coordination across phases occurs via open-drain SY_FLT and bidirectional FAULT/SD pins operating at 3.3 V CMOS levels.

Key Specifications

Pinout & Package

IR21141SSTRPBF is housed in a 24-lead SSOP (Shrink Small Outline Package) with exposed thermal pad, optimized for high-voltage isolation and thermal dissipation in compact motor drive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27712DR, the IR21141SSTRPBF uniquely integrates desat detection, soft shutdown, and inter-phase fault signaling - making it the only choice for safety-compliant industrial inverters requiring IEC 61800-5-2 functional safety support without added components.

Availability

IR21141SSTRPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, appliance inverters, and electric power steering systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IR21141SSTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in high-voltage gate driver design and reliability engineering.

The IR21141SSTRPBF belongs to Infineon's high-voltage gate driver product line, engineered specifically for robust, fault-tolerant motor control and inverter applications demanding integrated protection, precise timing, and multi-phase coordination.

FAQ

What is the maximum allowable dV/dt at the VS pin for reliable operation?

The IR21141SSTRPBF is rated for up to 50 V/ns dV/dt at the VS pin under normal operating conditions. This specification ensures stable high-side logic operation during fast-switching transients in 600 V and 1200 V bus systems, provided layout minimizes parasitic inductance between VS and COM grounds.

Can the IR21141SSTRPBF drive SiC MOSFETs directly?

Yes - its 600 V or 1200 V VOFFSET rating, 2 A/3 A drive strength, and 3.3 V logic compatibility support direct SiC MOSFET driving. However, desaturation detection must be reconfigured using external RC networks scaled for SiC's lower VCE(sat) and faster switching, as specified in Application Note AN-1181.

How does the soft shutdown feature reduce electromagnetic emissions?

Soft shutdown extends the turn-off time to ~9.25 µs, limiting dVCE/dt to approximately 300–500 V/µs depending on load. This controlled voltage slew rate suppresses high-frequency ringing and reduces common-mode current injection into heatsinks and chassis, lowering both conducted and radiated EMI in Class B environments.

Is the FAULT/SD pin truly bidirectional, and what voltage levels does it support?

Yes - FAULT/SD is a 3.3 V CMOS-compatible bidirectional pin. As an output, it sinks current in open-drain mode during fault events. As an input, it accepts active-low shutdown commands down to 0.8 V. The internal pull-up ensures default high state, and no external pull-up is required for standard MCU interfacing.