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Infineon Technologies IR22141SSTRPBF
- Part No.:
- IR22141SSTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 24-SSOP (0.209", 5.30mm Width)
- Datasheet:
-
IR22141SSTRPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 24SSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,106
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Product details
Overview
IR22141SSTRPBF from Infineon Technologies (formerly International Rectifier) is a high-voltage half-bridge gate driver IC designed for IGBT and MOSFET power stages in industrial motor drives and UPS systems. It supports up to 1200 V floating channel operation, delivers 2 A source / 3 A sink peak output drive, integrates desaturation detection with 3 µs blanking time, and features soft shutdown with 9.25 µs typical duration to suppress voltage overshoot during fault conditions.
For engineers reviewing the IR22141SSTRPBF datasheet, IR22141SSTRPBF pinout, IR22141SSTRPBF application, or IR22141SSTRPBF equivalent, key selection criteria include floating offset voltage rating (1200 V), matched deadtime (±75 ns max mismatch), dual-stage turn-on for di/dt control, separate pull-up/pull-down output pins, and 3.3 V–compatible FAULT/SD and SY_FLT signaling for multi-phase fault coordination.
Technical Context
The IR22141SSTRPBF implements independent undervoltage lockout (UVLO) on both low-side (VCC) and high-side (VB–VS) supplies, each with 0.9 V hysteresis. Its desaturation detection circuit monitors DSH and DSL inputs with 8.0 V threshold and 1.0 V hysteresis, triggering soft shutdown via dedicated SSDH/SSDL outputs after programmable blanking.
It uses dedicated COM and VSS ground pins to isolate emitter current sensing paths and reduce noise coupling. Propagation delays (ton/toff = 440 ns typ) and deadtime matching (MDT ≤ 75 ns) are tightly controlled across temperature and supply variations, enabling precise timing in interleaved or parallel half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VOFFSET | 1200 V max - enables direct driving of high-side switches in 650 V/1200 V IGBT-based inverters without level-shifting isolation |
| IO+/IO− | 2 A source / 3 A sink - sufficient gate charge delivery for 1200 V/100 A IGBTs with <200 ns switching transitions |
| Deadtime (typ) | 330 ns - ensures safe shoot-through prevention in hard-switched half-bridges at >100 kHz |
| Desat blanking time | 3 µs typ - avoids false triggering during IGBT turn-on transient while retaining fast short-circuit response |
| Soft shutdown time | 9.25 µs typ - linearly reduces gate voltage to limit dv/dt and suppress EMI during overcurrent events |
| VIN logic threshold | HIN/LIN VIH ≥ 2.0 V, VIL ≤ 0.8 V - compatible with 3.3 V microcontrollers and FPGA I/O without level translation |
| FAULT/SD interface | 3.3 V CMOS-compatible open-drain - allows bidirectional fault signaling and controller-initiated shutdown in multi-phase systems |
Pinout & Package
IR22141SSTRPBF is housed in a 24-lead SSOP (Shrink Small Outline Package) with exposed thermal pad, optimized for high-voltage isolation and thermal dissipation in compact power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Low-side logic supply input | Provides 11.5–20 V bias for internal logic and low-side drivers; UVLO triggers at 9.3 V (rising) |
| COM | Low-side power ground | Reference for LOP/LON/SSDL outputs and DSL input; separates signal ground from high-noise power return |
| HIN | High-side input control | CMOS-compatible digital input controlling HOP/HON; 1 µs minimum pulse width required |
| LIN | Low-side input control | CMOS-compatible digital input controlling LOP/LON; independent timing from HIN |
| VB | High-side floating supply | Bootstrap or isolated supply referenced to VS; must exceed VS by ≥11.5 V for reliable operation |
| VS | High-side floating ground | Switch node reference for high-side driver; withstands −5 V to +1200 V relative to VSS |
| HOP | High-side pull-up output | Active-high gate drive output (2 A source); used with external bootstrap diode/capacitor |
| HON | High-side pull-down output | Active-low gate drive output (3 A sink); provides fast turn-off independent of HOP path |
| LOP | Low-side pull-up output | Active-high gate drive output referenced to COM; drives low-side switch gate |
| LON | Low-side pull-down output | Active-low gate drive output referenced to COM; ensures robust low-side turn-off |
| DSH | High-side desaturation sense | Monitors IGBT collector-emitter voltage via RC network; triggers soft shutdown if >8.0 V |
| DSL | Low-side desaturation sense | Monitors low-side switch VCE/VDS; identical threshold and timing behavior as DSH |
| SSDH | High-side soft shutdown enable | Open-drain output pulling low during desat event; disables HOP/HON via external FET or resistor network |
| SSDL | Low-side soft shutdown enable | Open-drain output pulling low during desat event; disables LOP/LON via external FET or resistor network |
| FAULT/SD | Fault status & shutdown command | 3.3 V CMOS bidirectional pin: reads fault state or accepts controller-initiated shutdown |
| SY_FLT | Synchronization fault signal | Open-drain output indicating local fault; wired-OR with other phases to trigger system-level protection |
| FLT_CLR | Clear fault latch | Active-high input resetting internal fault latch after fault condition is removed |
| VSS | Logic ground reference | Separate ground for internal logic and UVLO comparators; improves noise immunity vs. COM |
| NC | No connect | Pins 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24 - only pins listed above are functional; remaining pins are NC per datasheet Fig. 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual-stage turn-on output | First stage (2 A pulsed) rapidly charges gate to Miller plateau; second stage (1 A sustained) completes turn-on with controlled di/dt |
| Matched propagation delay | Max 75 ns difference between high- and low-side turn-on/off delays - critical for minimizing cross-conduction in synchronous rectifiers |
| Independent UVLO on VB–VS and VCC | Prevents partial drive during bootstrap capacitor droop or main supply sag - avoids shoot-through due to asymmetric enable timing |
| Dedicated COM and VSS pins | Enables Kelvin connection for low-side emitter sensing and eliminates ground bounce coupling into logic circuits |
| Synchronization signaling (SY_FLT) | Allows phase-to-phase fault coordination in 3-phase inverters without external logic - reduces system-level fault response time to <4 µs |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage driving 15–50 kW permanent magnet or induction motors in HVAC compressors and pumps. IC Role / Device Role / Timing Role: Half-bridge gate driver providing isolated, high-current gate drive with integrated desat protection and soft shutdown for IGBT modules. Use Value: Eliminates need for discrete desat circuitry and external fault latching; reduces BOM count by 4–6 components per phase while improving short-circuit response time to <10 µs. | Use Scenario: Online double-conversion UPS with bidirectional DC–AC inverter and AC–DC rectifier stages operating at 16–20 kHz switching frequency. IC Role / Device Role / Timing Role: High-side and low-side gate driver coordinating synchronous switching with precise deadtime control and multi-phase fault synchronization. Use Value: Matched propagation delays (<75 ns mismatch) ensure consistent zero-voltage switching timing across all three phases, reducing transformer core loss by up to 12%. |
| Solar Inverters | Industrial Welding Equipment |
Use Scenario: String inverters converting DC from photovoltaic arrays to grid-synchronized 50/60 Hz AC using two-level or NPC topologies. IC Role / Device Role / Timing Role: Gate driver for high-voltage IGBTs in H-bridge output stage, managing desat faults during rapid irradiance transients and grid disturbances. Use Value: 3 µs desat blanking time prevents false trips during MPPT-induced current surges; soft shutdown limits dv/dt to <500 V/µs, easing EMI filter requirements. | Use Scenario: Inverter-based arc welding machines requiring high peak current (≥300 A) and fast dynamic response during short-circuit and arc ignition events. IC Role / Device Role / Timing Role: Fault-tolerant gate driver with dual desat inputs monitoring both upper and lower switches in full-bridge output stage. Use Value: Independent DSH/DSL inputs allow simultaneous monitoring of primary and secondary side switches; SY_FLT signaling enables coordinated shutdown across multiple bridge legs during electrode stick events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844SPBF | 600 V max VOFFSET, no integrated desat detection, single-stage output drive, no SY_FLT pin | Suitable for cost-sensitive 400 V AC-input PFC or low-power inverters without short-circuit protection requirements | Select when desat protection is handled externally and system voltage ≤ 600 V; not suitable for 1200 V IGBTs or multi-phase coordination |
| UCC21520DWPR | 1200 V VOFFSET, reinforced isolation, 4 A/6 A drive, no soft shutdown, no desat blanking, 30 ns propagation delay | Targeted at SiC MOSFETs requiring ultra-fast switching and galvanic isolation; lacks analog desat monitoring capability | Select for SiC-based designs needing <35 ns propagation delay and CMTI >100 kV/µs; requires external desat circuit if IGBT protection needed |
Compared with IRS21844SPBF and UCC21520DWPR, the IR22141SSTRPBF uniquely combines 1200 V floating capability, integrated desat detection with blanking, soft shutdown, and multi-phase synchronization-making it optimal for ruggedized IGBT inverters where fault containment and EMI control are design priorities.
Availability
IR22141SSTRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and industrial welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical power conversion.
Supply support for IR22141SSTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage gate driver architecture and industrial power system integration.
The IR22141SSTRPBF belongs to Infineon's legacy International Rectifier high-voltage gate driver product line, engineered specifically for robust, fault-resilient control of IGBTs and high-voltage MOSFETs in industrial motor drives and energy conversion systems.
FAQ
What is the maximum allowable dV/dt on the VS pin?
The IR22141SSTRPBF specifies a maximum allowable offset voltage slew rate of 50 V/ns on the VS pin. This rating ensures reliable operation under fast-switching conditions typical of IGBT-based inverters. Exceeding this rate may cause false triggering of internal comparators or premature UVLO activation. Layout best practices-including minimized loop area for VS routing and local decoupling near the VS pin-are essential to maintain immunity.
Can the IR22141SSTRPBF drive SiC MOSFETs?
Yes, but with design constraints: its 2 A/3 A drive strength and 440 ns typical propagation delay are adequate for many 1200 V SiC MOSFETs up to ~20 A rated current. However, the lack of active Miller clamp and absence of negative gate drive limit performance in high-di/dt SiC applications. External gate resistors and careful layout are required to manage ringing and ensure reliable turn-off.
How does the soft shutdown function interact with the FAULT/SD pin?
Soft shutdown is triggered internally by desat detection and asserts SSDH/SSDL outputs to disable gate drive. The FAULT/SD pin reflects this state as an open-drain low signal and can also be driven low by the system controller to force immediate shutdown. The internal fault latch remains set until FLT_CLR is asserted high, ensuring fault persistence across power cycles unless explicitly cleared.
Is there a recommended bootstrap diode for use with IR22141SSTRPBF?
Infineon recommends fast-recovery or ultrafast diodes with trr ≤ 35 ns and IF(AV) ≥ 100 mA, such as the BYV26E or BAS21. The diode must withstand reverse voltage ≥ VB – VS (i.e., ≥1200 V for IR22141SSTRPBF), and its forward voltage drop directly impacts minimum achievable high-side duty cycle. A Schottky diode is unsuitable due to leakage current causing bootstrap capacitor discharge at high temperature.
IR22141SSTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 24-SSOP (0.209", 5.30mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT
- Voltage - Supply:
- 11.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2V
- Current - Peak Output (Source, Sink):
- 2A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 1200 V
- Rise / Fall Time (Typ):
- 24ns, 7ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SSOP
IR22141SSTRPBF FAQ
1.How can I place an order for IR22141SSTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IR22141SSTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IR22141SSTRPBF reliable?
The price and inventory of IR22141SSTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR22141SSTRPBF is usually 5 days.
3.What payment methods are accepted for IR22141SSTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR22141SSTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IR22141SSTRPBF?
IR22141SSTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IR22141SSTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IR22141SSTRPBF?
For technical support, including IR22141SSTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR22141SSTRPBF requirements.
6.How does Aetrix verify that IR22141SSTRPBF is sourced from the original manufacturer or authorized distributors?
All IR22141SSTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR22141SSTRPBF meets industry standards.
7.What is the process for return or replacement of IR22141SSTRPBF?
All IR22141SSTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IR22141SSTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IR22141SSTRPBF part is unused and in its original packaging.
Return procedure for IR22141SSTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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