Infineon Technologies IR2301
- Part No.:
- IR2301
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-DIP (0.300", 7.62mm)
- Datasheet:
-
IR2301.pdf
- Description:
- IC GATE DRVR HI/LOW SIDE 8DIP
- Quantity:
- Payment:

- Shipping:

Inventory:4,022
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Product details
Overview
IR2301 from Infineon Technologies (formerly International Rectifier) is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (floating up to +600 V) and low-side output channels. It supports 3.3 V/5 V/15 V logic inputs, delivers ±200 mA peak output current, exhibits matched propagation delay (≤50 ns), and operates with VCC from 5–20 V and VB–VS up to 600 V - used in half-bridge motor drives and SMPS.
For engineers reviewing the IR2301 datasheet, IR2301 pinout, IR2301 application, or IR2301 equivalent, key selection criteria include high-side floating capability, dV/dt immunity, undervoltage lockout on both channels, logic-level compatibility down to 3.3 V, and thermal performance in PDIP/SOIC packages under industrial temperature range (−40°C to +150°C).
Technical Context
The IR2301 integrates proprietary HVIC (High-Voltage IC) technology enabling monolithic high-side level shifting without external bootstrap diodes. Its floating channel uses pulse-transformer-based level shift with latch-immune CMOS logic, supporting VS transients up to 50 V/ns and logic operation across −5 V to +600 V offset.
Both channels feature independent undervoltage lockout (UVLO) with hysteresis (0.3 V), matched turn-on/turn-off delays (typ. 220/200 ns), and in-phase input-to-output response. The driver employs lower di/dt gate drive stages and internal pulse filtering to suppress noise-induced false triggering in high-noise power-conversion environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-side voltage rating | +600 V absolute max VB; enables direct high-side switching in 400 V AC rectified bus applications |
| Propagation delay matching | ≤50 ns difference between HO/LO channels; minimizes shoot-through risk in half-bridge topologies |
| Logic input compatibility | VIH ≥2.9 V, VIL ≤0.8 V at VCC = 10–20 V; interoperable with 3.3 V microcontrollers and FPGA I/O |
| Output drive strength | IO+ = 200 mA, IO− = 350 mA peak; sufficient to drive 1 nF gate capacitance with <220 ns rise time |
| UVLO thresholds | VCC/VBS UV+ = 4.1 V, UV− = 3.8 V, hysteresis = 0.3 V; prevents erratic switching during brown-out conditions |
| Operating temperature | −40°C to +150°C junction; validated for industrial motor control and automotive under-hood auxiliary supplies |
| dV/dt immunity | 50 V/ns on VS node; sustains reliable operation during fast-switching transitions in SiC/GaN-inverter contexts |
Pinout & Package
IR2301 is available in 8-lead PDIP (IR2301) and 8-lead SOIC (IR2301S) packages, both with 0.3-inch body width and standard lead pitch. Thermal resistance is 125°C/W (PDIP) and 200°C/W (SOIC) under still-air conditions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Low-side and logic supply rail | Fixed 5–20 V input powering internal logic, level shifter, and LO driver stage |
| HIN | High-side logic input | In-phase TTL/CMOS-compatible signal controlling HO output; referenced to COM |
| LIN | Low-side logic input | In-phase TTL/CMOS-compatible signal controlling LO output; referenced to COM |
| COM | Logic and low-side ground reference | Common return for VCC, HIN, LIN, LO; tolerant to ±5 V offset vs. power ground |
| VB | High-side floating supply | Bootstrap or isolated supply input for high-side driver stage; referenced to VS |
| HO | High-side gate drive output | Source-follower output driving N-MOSFET/IGBT gate; swings from VS to VB |
| VS | High-side floating return | Return path for high-side channel; connects to switch node in half-bridge configuration |
| LO | Low-side gate drive output | Push-pull output driving N-MOSFET/IGBT gate; swings from COM to VCC |
Key Features
| Feature | Design Value |
|---|---|
| Floating channel architecture | Monolithic HVIC level shifter eliminates need for external high-side bias circuitry or optocouplers |
| Matched propagation delay | ≤50 ns skew between HO and LO ensures symmetrical switching timing critical for ZVS/ZCS topologies |
| Logic-compatible inputs | Supports 3.3 V, 5 V, and 15 V logic families without external level translation or pull-up resistors |
| Independent dual UVLO | Separate undervoltage detection on VCC and VB–VS rails prevents partial-driver activation during supply faults |
| Lower di/dt gate drive | Controlled slew rate reduces EMI generation and improves noise immunity in densely packed power boards |
Applications
| Motor Drive Half-Bridge | Industrial SMPS |
|---|---|
Use Scenario: Driving complementary N-channel MOSFETs in 3-phase BLDC inverter stages with 400 V DC bus. IC Role / Device Role / Timing Role: High-side/low-side gate driver providing synchronized, shoot-through-protected switching with <50 ns delay matching. Use Value: Enables efficient commutation at 20 kHz with minimal dead-time penalty and robust dV/dt noise rejection at motor phase nodes. | Use Scenario: Gate driving primary-side switches in 1 kW telecom rectifier using Si MOSFETs. IC Role / Device Role / Timing Role: Dual-channel driver delivering precise timing control and UVLO protection for continuous conduction mode (CCM) operation. Use Value: Ensures stable startup and fault recovery under wide-input AC line variations (90–264 VAC) and load transients. |
| Solar Microinverter | EV Onboard Charger |
Use Scenario: Controlling H-bridge in single-phase transformerless PV inverter with 600 V DC link. IC Role / Device Role / Timing Role: Floating high-side driver enabling direct connection to split-capacitor DC bus without isolation transformers. Use Value: Supports NEC 690.12 rapid shutdown compliance via fast, coordinated turn-off of both bridge legs. | Use Scenario: Driving SiC MOSFETs in bidirectional AC/DC converter stage of 6.6 kW OBC. IC Role / Device Role / Timing Role: High-speed gate driver with 50 V/ns dV/dt immunity for fast-switching SiC devices operating at 100 kHz. Use Value: Reduces gate drive losses by 35% versus discrete solutions while maintaining safe operating area (SOA) margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2101 | Lower peak output current (±130 mA), no logic-level compatibility below 5 V, wider propagation delay mismatch (≤100 ns) | Targeted at cost-sensitive 100–300 W SMPS where shoot-through margin is relaxed | Choose when gate charge is ≤30 nC and logic interface is strictly 5 V |
| IRS21844 | Integrated bootstrap diode, higher VBS UVLO threshold (10.1 V), 100 ns delay matching, SOIC-14 package | Designed for high-reliability industrial inverters requiring integrated bootstrap management | Prefer when board space allows larger footprint and bootstrap diode integration simplifies layout |
Compared with IR2301, IR2101 offers reduced drive strength and looser timing control but lower BOM cost, while IRS21844 trades pin count and package size for integrated bootstrap support and tighter industrial-grade UVLO - making IR2301 optimal for compact, high-performance half-bridge designs needing 3.3 V logic and minimal delay skew.
Availability
IR2301 is available at Aetrix Electronics and suitable for motor drive half-bridges, industrial SMPS, and solar microinverters requiring stable component supply across extended temperature and high-voltage stress conditions.
Supply support for IR2301 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage analog and mixed-signal process technologies.
The IR2301 belongs to Infineon's legacy IR high-voltage gate driver product line, engineered specifically for ruggedized, cost-effective half-bridge control in industrial power conversion and motor control systems.
FAQ
Can IR2301 drive SiC MOSFETs directly?
Yes - IR2301 can drive SiC MOSFETs with gate charge ≤35 nC and threshold voltage ≥2.5 V. Its 200 mA peak source/sink current, 50 V/ns dV/dt immunity, and 220 ns rise time meet typical SiC gate requirements at 100 kHz switching. External gate resistors must be selected to limit dv/dt per device datasheet limits.
What is the minimum bootstrap capacitor value for IR2301 in 20 kHz operation?
For 20 kHz PWM with 50% duty cycle and 15 V VBS, a 0.22 µF ceramic capacitor with ≤100 mΩ ESR is recommended. This ensures <1.5 V droop per cycle given typical 60 µA quiescent VBS current and 200 mA peak charging demand, maintaining UVLO margin above 10.5 V.
Does IR2301 require external level-shifting components for high-side control?
No - IR2301 integrates a monolithic high-voltage level shifter (HVIC) that eliminates external optocouplers, pulse transformers, or isolated DC/DC converters. The floating channel operates autonomously with only VB, VS, and HO connections required for high-side gate drive.
How does IR2301 handle negative VS transients?
IR2301 tolerates VS transients down to −5 V relative to COM (per Note 1), supported by internal clamp structures and latch-immune design. During negative excursions, logic remains latched and outputs disable until VS recovers within −5 V to +600 V range - preventing false turn-on in hard-commutated or resonant circuits.
IR2301 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side or Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 5V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.9V
- Current - Peak Output (Source, Sink):
- 200mA, 350mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 130ns, 50ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 8-PDIP
IR2301 FAQ
1.How can I place an order for IR2301 through Aetrix?
Please submit a Request for Quotation (RFQ) for IR2301 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IR2301 reliable?
The price and inventory of IR2301 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR2301 is usually 5 days.
3.What payment methods are accepted for IR2301?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR2301 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IR2301?
IR2301 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IR2301 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IR2301?
For technical support, including IR2301 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR2301 requirements.
6.How does Aetrix verify that IR2301 is sourced from the original manufacturer or authorized distributors?
All IR2301 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR2301 meets industry standards.
7.What is the process for return or replacement of IR2301?
All IR2301 units undergo pre-shipment inspection (PSI). If there is an issue with IR2301, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IR2301 part is unused and in its original packaging.
Return procedure for IR2301:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IR2301 Tags

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