Infineon Technologies IR2301PBF

Overview

IR2301PBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (up to +600 V) and low-side outputs with matched propagation delay (≤50 ns), 5–20 V gate drive supply range, and 3.3/5/15 V logic compatibility. It enables half-bridge motor control and SMPS designs requiring robust bootstrap-based high-side switching.

For engineers reviewing the IR2301PBF datasheet, IR2301PBF pinout, IR2301PBF application, or IR2301PBF equivalent, key selection criteria include floating channel dV/dt immunity (50 V/ns), undervoltage lockout on both VCC and VB supplies, ±5 V logic/power ground offset tolerance, and in-phase input-to-output behavior under industrial temperature range (−40°C to +150°C).

Technical Context

The IR2301PBF integrates a proprietary HVIC process with latch-immune CMOS logic to support monolithic high-side floating operation up to 600 V absolute voltage on VB, with VS referenced to COM. Its level-shifting architecture uses pulse generation and UV detection to maintain reliable switching across wide dV/dt transients.

Both channels feature matched turn-on/turn-off propagation delays (typ. 220/200 ns), rise/fall times (130/50 ns typ.), and independent undervoltage lockout thresholds (VCCUV+ = 4.1 V, VBSUV+ = 4.1 V), enabling synchronous half-bridge control without external timing compensation.

Key Specifications

Pinout & Package

IR2301PBF is housed in an 8-lead PDIP package (0.300" width), with creepage/clearance optimized for 600 V isolation. Pin assignments are identical for PDIP and SOIC variants per IRF datasheet PD60201 Rev.D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2301PBF, IR2101PBF lacks independent inputs and reduced drive strength, while IRS21844PbF adds integrated dead-time but requires larger PCB area and different layout constraints - IR2301PBF remains optimal for space-constrained, MCU-timed half-bridge systems needing precise delay matching and 600 V capability.

Availability

IR2301PBF is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, solar microinverters, and electric vehicle auxiliary systems requiring stable component supply and long-term obsolescence planning.

Supply support for IR2301PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

The IR2301PBF belongs to Infineon's legacy HVIC gate driver product line, designed specifically for cost-sensitive, high-reliability half-bridge applications in industrial and renewable energy systems where bootstrap-based high-side drive is preferred over isolated solutions.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2301PBF is rated for 50 V/ns dV/dt on the VS node, verified per datasheet PD60201 Rev.D. This immunity ensures stable high-side operation during fast switching transitions in 600 V bus systems, preventing false turn-on due to capacitive coupling. Exceeding this limit may cause erratic HO output behavior or latch-up.

Can IR2301PBF drive SiC or GaN MOSFETs?

Yes - its 200 mA peak output current, 130 ns typical rise time, and 5–20 V gate drive range support common SiC and GaN devices with Qg < 20 nC. However, layout must minimize loop inductance, and external gate resistors should be used to dampen ringing; the IC does not include active Miller clamp or negative turn-off features.

Is bootstrap capacitor sizing critical for reliable operation?

Yes - insufficient bootstrap capacitance causes VBS droop during high-duty-cycle operation, triggering UVLO on VB. For 20 kHz switching with 95% duty cycle, ≥0.22 µF ceramic (X7R) with low ESR is recommended. Placement must be within 5 mm of VB/VS pins to minimize impedance and ensure stable high-side bias.

Does IR2301PBF support 3.3 V-only microcontroller interfaces?

Yes - VIH is guaranteed ≥2.9 V at VCC = 10–20 V, and VIL ≤0.8 V across temperature, making it compatible with 3.3 V logic without level shifting. Input bias current is ≤20 µA at VIN = 5 V, ensuring minimal loading on MCU GPIOs even at full temperature range.