Infineon Technologies IR2301STR

Overview

IR2301STR from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (floating up to +600 V) and low-side output channels. It supports 5–20 V gate drive supply, 3.3/5/15 V logic-compatible inputs, matched propagation delay (<50 ns), and undervoltage lockout on both channels - used in half-bridge motor drives and SMPS.

For engineers reviewing the IR2301STR datasheet, IR2301STR pinout, IR2301STR application, or IR2301STR equivalent, key selection considerations include floating channel dV/dt immunity, VS offset tolerance (−5 V to +600 V), propagation delay matching, bootstrap-compatible operation, and SOIC-8 thermal performance (R_thJA = 200 °C/W).

Technical Context

The IR2301STR integrates proprietary HVIC technology for monolithic high-side level shifting and latch-immune CMOS logic. Its floating channel uses pulse-transformer-based level shift with built-in UVLO hysteresis (0.3 V) and dV/dt immune design enabling stable operation at VS transients up to 50 V/ns.

Both outputs are in-phase with respective logic inputs (HIN→HO, LIN→LO), with matched turn-on/off delays (≤50 ns mismatch) and separate quiescent current paths (I_QBS = 20–100 µA, I_QCC = 50–190 µA), supporting synchronous half-bridge control under varying temperature (−40°C to +150°C) and supply conditions.

Key Specifications

Pinout & Package

IR2301STR is housed in an 8-lead SOIC package (body width 3.9 mm, lead pitch 1.27 mm), surface-mount compatible with standard reflow profiles and rated for 150°C junction temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2301STR and UCC27211DR, the IR2301STR offers optimal balance of integration (self-contained bootstrap operation), timing precision (≤50 ns matching), and thermal efficiency (200 °C/W SOIC) for cost-sensitive industrial inverters below 200 kHz.

Availability

IR2301STR is available at Aetrix Electronics and suitable for motor drives, industrial SMPS, solar microinverters, and appliance inverter modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IR2301STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial sensors, with global R&D and wafer fabrication infrastructure.

The IR2301STR belongs to Infineon's legacy IR high-voltage gate driver product line, designed specifically for cost-effective, robust half-bridge control in AC/DC and motor drive systems up to 600 V.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2301STR is rated for dV/dt immunity up to 50 V/ns on the VS pin, verified per datasheet test condition. This specification ensures reliable operation during fast-switching events in half-bridge configurations without false triggering of the high-side driver stage, provided layout minimizes parasitic inductance in the VS return path.

Can IR2301STR drive SiC MOSFETs?

The IR2301STR can drive low-to-mid gate-charge SiC MOSFETs (Q_g ≤ 20 nC) at switching frequencies ≤100 kHz, given its 200 mA HS and 350 mA LS peak output current. However, it lacks active Miller clamp or negative turn-off capability, so external gate resistors and RC snubbers are recommended for robust SiC gate control.

Is bootstrap capacitor sizing dependent on switching frequency?

Yes - bootstrap capacitor value must scale inversely with switching frequency and high-side duty cycle to maintain VBS ≥4.1 V. For 20 kHz operation at 95% duty, ≥0.22 µF ceramic (X7R, 25 V) is required; at 100 kHz, ≥0.47 µF is recommended. Capacitor ESR must remain <1 Ω to limit voltage droop during conduction.

Does IR2301STR support 3.3 V-only logic interfaces?

Yes - VIH(min) = 2.9 V at VCC = 10–20 V, and VIL(max) = 0.8 V, making it compatible with 3.3 V CMOS logic without level translation. Input bias current is ≤20 µA at VIN = 5 V, ensuring minimal loading on MCU GPIOs even under worst-case VCC conditions.