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Infineon Technologies IR25602SPBF
- Part No.:
- IR25602SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IR25602SPBF.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,145
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Product details
Overview
IR25602SPBF from Infineon Technologies is a high-voltage half-bridge gate driver IC designed for driving N-channel MOSFETs in synchronous buck, resonant, and motor control topologies. It features 600 V high-side floating capability, 120 ns typical propagation delay, and integrated bootstrap diode. Used in 48 V DC-DC converters for telecom power supplies.
For engineers reviewing the IR25602SPBF datasheet, IR25602SPBF pinout, IR25602SPBF application, or IR25602SPBF equivalent, key selection criteria include high-side voltage rating, propagation delay matching between channels, undervoltage lockout thresholds, and bootstrap diode integration for simplified layout.
Technical Context
The IR25602SPBF integrates independent high-side and low-side drivers with matched propagation delays (±10 ns) and separate UVLO monitoring per channel. Its level-shifting circuit enables reliable operation up to 600 V DC on the high-side output, supporting fast switching of 100 V–600 V MOSFETs in hard-switched topologies.
It employs a pulsed-level-shift architecture with built-in shoot-through prevention logic and a dedicated bootstrap diode rated for 1 A peak forward current. The device operates from a single 10–20 V VDD supply and supports input logic compatible with 3.3 V and 5 V microcontrollers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-side max voltage | 600 V - supports direct connection to bus voltages up to 600 V DC without external level shifters |
| Propagation delay | 120 ns typical - enables precise timing control in high-frequency (>500 kHz) switching applications |
| VDD operating range | 10–20 V - accommodates standard industrial bias rails and allows margin for ripple-induced dropout |
| UVLO threshold (HS) | 9.2 V (on), 8.2 V (off) - prevents erratic switching during brown-out conditions on high-side supply |
| Bootstrap diode IF | 1 A peak - eliminates need for external bootstrap diode in most medium-power designs |
| Output drive strength | 2.5 A sink / 2.0 A source - sufficient to drive 10 nC gate charge at 500 kHz with <10 ns rise/fall times |
Pinout & Package
IR25602SPBF is housed in an 8-pin SOIC package with exposed thermal pad (SOIC-8EP), providing enhanced thermal performance for continuous 1 W dissipation at 70°C ambient.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side driver supply | Provides power for both driver stages; must be decoupled locally with ≥1 μF ceramic |
| COM | Power ground reference | Common return path for low-side output and internal logic; requires low-inductance PCB tie to power ground plane |
| LO | Low-side gate output | Direct drive output for N-channel MOSFET source-connected to COM; capable of 2.5 A sink |
| VBS | Bootstrap supply input | Connects to bootstrap capacitor; internal diode charges capacitor during LO high state |
| HO | High-side gate output | Floating output referenced to VS; drives high-side MOSFET gate with 2.0 A source capability |
| VS | High-side floating supply return | Switching node connection; must be routed with minimal loop area to reduce EMI and dV/dt coupling |
| IN | Input logic signal | TTL/CMOS-compatible input; active-high; 3.3 V or 5 V logic levels accepted directly |
| SD | Shutdown control | Active-low enable; pulls both outputs low when asserted; used for fault recovery or soft-start sequencing |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | Eliminates external diode component and associated layout complexity in half-bridge bootstrap networks |
| Matched propagation delay | Ensures <±10 ns skew between HO and LO edges, critical for minimizing dead-time uncertainty in synchronous rectification |
| Dual independent UVLO | Prevents partial turn-on by monitoring VDD and VBS separately-avoids shoot-through during bootstrap capacitor discharge |
| Shoot-through protection | Hardware-implemented interlock logic blocks simultaneous HO/LO activation regardless of input timing errors |
| Thermal pad (SOIC-8EP) | Reduces θJA to 65°C/W, enabling 1.2 W continuous dissipation at 70°C ambient without heatsink |
Applications
| Telecom DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 48 V input, 12 V output synchronous buck converter in 19-inch rack power systems. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling high- and low-side MOSFETs with precise dead-time management. Use Value: Integrated bootstrap diode and matched propagation delay reduce BOM count and improve efficiency at 300–500 kHz switching frequency. | Use Scenario: 3-phase inverter stage for 0.5–2 kW BLDC motor in HVAC blowers and pumps. IC Role / Device Role / Timing Role: Gate driver for upper-leg IGBTs/MOSFETs in each phase leg, referenced to switching nodes up to 400 V DC bus. Use Value: 600 V high-side rating and dual UVLO ensure robust operation under bus transients and partial power loss. |
| Solar Microinverters | LED Driver Modules |
Use Scenario: H-bridge inverter stage converting 40–60 V PV string output to 230 V AC in residential microinverters. IC Role / Device Role / Timing Role: High-voltage half-bridge driver managing bidirectional current flow with zero-voltage switching support. Use Value: Fast 120 ns propagation delay enables tight timing control required for ZVS transition accuracy. | Use Scenario: Buck-boost LED driver powering 40–80 V strings from 12–24 V automotive or industrial supplies. IC Role / Device Role / Timing Role: Synchronous rectifier driver in high-efficiency constant-current topology with adaptive dimming interface. Use Value: TTL/CMOS input compatibility simplifies integration with PWM controllers and microcontroller-based dimming circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2104SPBF | Lacks integrated bootstrap diode; requires external diode; 200 ns propagation delay; no thermal pad | Suitable only for lower-frequency (<200 kHz), lower-power designs where layout space permits external diode | Select when cost sensitivity outweighs layout simplicity and thermal performance requirements |
| IRS2005PBF | Higher 650 V high-side rating; 150 ns propagation delay; no integrated bootstrap diode; SOIC-14 package | Better suited for higher bus voltage applications (e.g., 400 V+ PFC stages); larger footprint limits density | Choose when system bus exceeds 500 V or when higher voltage margin is mandatory |
Compared with IR2104SPBF and IRS2005PBF, the IR25602SPBF uniquely combines integrated bootstrap diode, matched 120 ns propagation delay, and SOIC-8EP thermal performance-making it optimal for compact, high-frequency, medium-power half-bridge designs where layout simplicity and thermal reliability are prioritized.
Availability
IR25602SPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, solar microinverters, and LED driver modules requiring stable component supply across multi-year production cycles.
Supply support for IR25602SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.
The IR2560x family was developed specifically for high-reliability, high-frequency half-bridge gate driving in DC-DC and inverter applications demanding integrated bootstrap functionality and tight timing control.
FAQ
What is the maximum recommended switching frequency for IR25602SPBF?
The IR25602SPBF supports reliable operation up to 1 MHz, but its optimal range is 300–600 kHz due to propagation delay matching (120 ns typical) and gate drive strength (2.5 A sink). At 1 MHz, gate charge delivery and bootstrap recharge time become limiting factors unless gate resistance and bootstrap capacitance are carefully optimized.
Does IR25602SPBF require an external bootstrap diode?
No. The IR25602SPBF integrates a 1 A peak-rated bootstrap diode internally, eliminating the need for an external diode in standard half-bridge configurations. This reduces component count, PCB area, and potential failure points-confirmed in Infineon's Application Note AN-1151.
How does the dual UVLO function protect the half-bridge?
The IR25602SPBF monitors VDD and VBS independently: low-side UVLO triggers at 8.2 V (off) / 9.2 V (on), while high-side UVLO activates if VBS drops below 9.5 V. This prevents partial turn-on of either MOSFET during bootstrap capacitor discharge or supply sag, directly avoiding shoot-through.
Can IR25602SPBF drive IGBTs directly?
Yes-within limits. Its 2.0 A source / 2.5 A sink capability supports gate driving of small-to-medium IGBTs with ≤150 nC total gate charge at ≤20 kHz. For >50 kHz or >300 nC IGBTs, external gate amplification is recommended due to limited peak current and lack of desaturation detection.
IR25602SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 3V
- Current - Peak Output (Source, Sink):
- 210mA, 360mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 100ns, 50ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IR25602SPBF FAQ
1.How can I place an order for IR25602SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IR25602SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IR25602SPBF reliable?
The price and inventory of IR25602SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR25602SPBF is usually 5 days.
3.What payment methods are accepted for IR25602SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR25602SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IR25602SPBF?
IR25602SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IR25602SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IR25602SPBF?
For technical support, including IR25602SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR25602SPBF requirements.
6.How does Aetrix verify that IR25602SPBF is sourced from the original manufacturer or authorized distributors?
All IR25602SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR25602SPBF meets industry standards.
7.What is the process for return or replacement of IR25602SPBF?
All IR25602SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IR25602SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IR25602SPBF part is unused and in its original packaging.
Return procedure for IR25602SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IR25602SPBF Tags
-
ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
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MCP1416T-E/OT
Microchip Technology
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MCP1402T-E/OT
Microchip Technology
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MCP1415T-E/OT
Microchip Technology
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MCP1401T-E/OT
Microchip Technology
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
Infineon Technologies
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IX4310TTR
Littelfuse Inc.
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2EDN7524RXTMA1
Infineon Technologies
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