Infineon Technologies IRS2106STRPBF

Overview

IRS2106STRPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs referenced to floating (VS) and common (COM) grounds respectively. It supports up to 600 V operation, offers matched 220 ns / 200 ns turn-on/turn-off propagation delays, 10 V–20 V gate drive supply range, and 3.3 V/5 V/15 V logic-compatible inputs - used in half-bridge motor control and SMPS power stages.

For engineers reviewing the IRS2106STRPBF datasheet, IRS2106STRPBF pinout, IRS2106STRPBF application, or IRS2106STRPBF equivalent, key selection factors include bootstrap-capable high-side drive capability, dV/dt immunity up to 50 V/ns, undervoltage lockout on both channels, and precise propagation delay matching between HO and LO paths under varying temperature and supply conditions.

Technical Context

The IRS2106STRPBF integrates a high-voltage level shifter and pulse filter to enable robust floating channel operation up to +600 V referenced to COM. Its HVIC monolithic construction provides latch-immune CMOS logic with separate VCC (10–20 V) and VB (VS + 10 to VS + 20 V) supplies.

It features independent HIN/LIN inputs driving in-phase HO/LO outputs, no internal dead-time generation, and UVLO thresholds of 8.9 V (rising) and 8.2 V (falling) on both VCC and VB rails. Logic ground is tied to COM (no VSS pin), distinguishing it from the IRS21064 variant.

Key Specifications

Pinout & Package

IRS2106STRPBF is supplied in an 8-lead SOIC package (body width 3.9 mm, JEDEC MS-012), with gull-wing leads and RoHS-compliant matte tin plating. Pin 1 is marked by a beveled corner or dot.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2104STRPBF, the IRS2106STRPBF adds essential high-side capability for half-bridge use; versus IR2110SPBF, it trades peak current and speed for compact 8-pin SOIC integration and lower quiescent supply current (75 µA vs. ~250 µA).

Availability

IRS2106STRPBF is available at Aetrix Electronics and suitable for industrial motor drives, induction heating inverters, telecom SMPS, and UPS systems requiring stable component supply across extended production lifecycles.

Supply support for IRS2106STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IRS21xx family was designed specifically for cost-sensitive, high-reliability half-bridge applications requiring integrated bootstrap-compatible high-side drive and precise timing alignment - targeting motor control, lighting, and power conversion markets.

FAQ

Can IRS2106STRPBF drive P-channel high-side MOSFETs?

No. The IRS2106STRPBF is optimized for N-channel high-side devices using bootstrap configuration. Its HO output is a source-follower stage referenced to VS, requiring the switch source to be connected to VS. Driving P-channel devices would require inverted logic and non-standard biasing incompatible with its internal UVLO and level-shifting architecture.

What is the minimum bootstrap capacitor value recommended for 100 kHz operation?

For 100 kHz switching with 220 ns ton and 200 ns toff, a 100 nF ceramic capacitor (X7R, 25 V rating) is recommended. This ensures sufficient charge replenishment during the low-side conduction period while limiting voltage droop across VB–VS to <1.5 V under 10 mA average bootstrap current, per Infineon Design Tip DT97-3.

Does IRS2106STRPBF include built-in dead-time generation?

No. IRS2106STRPBF provides in-phase HIN→HO and LIN→LO drive with no internal dead-time insertion. Dead time must be implemented externally via controller PWM outputs or RC delay networks to prevent shoot-through in half-bridge configurations.

How does the dV/dt immunity specification apply in practice?

The 50 V/ns rating means the device suppresses false triggering when the VS node transitions at up to 50 V per nanosecond - typical in hard-switched 600 V circuits with fast di/dt. This is achieved via internal pulse filtering and level-shifter design, verified per JEDEC JESD22-A114 test conditions using transient injection on the VS pin.