Infineon Technologies IRS21084STRPBF

Overview

IRS21084STRPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs in half-bridge configurations. It features independent high-side (up to +600 V) and low-side channels, 540 ns internal deadtime, programmable deadtime via external R_DT, and 3.3 V/5 V/15 V logic-compatible inputs. Used in motor inverters, SMPS, and induction heating systems requiring robust shoot-through prevention.

For engineers reviewing the IRS21084STRPBF datasheet, IRS21084STRPBF pinout, IRS21084STRPBF application, or IRS21084STRPBF equivalent, key selection criteria include floating channel voltage rating (+600 V), matched propagation delay (≤30 ns mismatch), undervoltage lockout thresholds (V_CC/V_BS UV+ = 8.9 V typ), dV/dt immunity (50 V/ns), and SOIC-14 package thermal resistance (R_thJA = 75 °C/W).

Technical Context

The IRS21084STRPBF integrates a high-voltage level shifter for the floating high-side channel and employs latch-immune CMOS technology to sustain operation under fast transient conditions. Its functional block includes independent UV detection for both V_CC and V_BS, pulse filtering, and cross-conduction prevention logic with internal 540 ns deadtime.

Unlike the pin-compatible IRS2108, the IRS21084 adds a dedicated V_SS logic ground terminal and DT pin for deadtime programming up to 5 µs using one external resistor-enabling precise timing control in synchronous rectification and resonant topologies where overlap margin must be tightly managed.

Key Specifications

Pinout & Package

IRS21084STRPBF is housed in a 14-lead SOIC package with exposed pad (RoHS-compliant, Pb-free). Pin assignments are validated per Infineon PD60260 datasheet Rev. A and match the IRS21084SPbF variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2108STRPBF and IR2110STRPBF, the IRS21084STRPBF uniquely provides programmable deadtime and isolated logic ground-making it optimal for noise-sensitive, digitally controlled power stages where timing adaptability and EMI resilience are mandatory.

Availability

IRS21084STRPBF is available at Aetrix Electronics and suitable for motor inverters, resonant converters, induction heating systems, and industrial UPS designs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for IRS21084STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRS21084 belongs to Infineon's high-voltage gate driver product line, engineered specifically for robust half-bridge control in industrial motor drives, renewable energy inverters, and high-efficiency SMPS where reliability under harsh electrical stress is essential.

FAQ

What is the maximum allowable dV/dt on the VS pin for IRS21084STRPBF?

The datasheet specifies a maximum dV/dt tolerance of 50 V/ns for the 14-lead PDIP package and 1.0 V/ns for the SOIC-14 variant. This rating is measured under standard test conditions with V_BIAS = 15 V and T_A = 25 °C. Exceeding this limit may cause false triggering of the high-side level shifter, leading to unintended HO activation. Layout best practices-including minimized VS loop area and local ceramic decoupling-must be followed to maintain immunity.

Can IRS21084STRPBF drive SiC MOSFETs directly?

Yes-IRS21084STRPBF can directly drive discrete SiC MOSFETs with gate threshold voltages ≥2.5 V and total gate charge ≤100 nC, provided V_CC and V_BS are set to 18–20 V for full enhancement. Its 290 mA peak HO source current and 600 mA LO sink current meet typical SiC gate drive requirements at ≤100 kHz. However, external negative gate turn-off bias or active Miller clamp is recommended for hard-switching >50 kHz to prevent spurious turn-on.

How is deadtime programmed using the DT pin?

Deadtime is set by connecting a resistor R_DT between the DT pin and V_SS. With R_DT = 0 Ω, deadtime is 540 ns (min); with R_DT = 200 kΩ, it extends to 5 µs (max). The relationship is linear and specified in the Electrical Characteristics table (page 3 of PD60260). No capacitor or additional components are required-the DT pin functions as a current-sink input calibrated internally.

Is VSS required to be connected even if not used for logic referencing?

Yes-V_SS must be connected to system logic ground regardless of whether external logic references it. It serves as the reference for the DT pin, internal UVLO comparators, and input buffer biasing. Leaving V_SS unconnected causes undefined behavior, including failure of deadtime programming and erratic HIN/LIN response. Per Figure 4 in PD60260, V_SS is electrically distinct from COM and must be routed separately with low-inductance connection.