Infineon Technologies IRS2109STRPBF

Overview

IRS2109STRPBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed to control N-channel MOSFETs and IGBTs in switching power converters. It features independent high-side (up to +600 V) and low-side output channels, 750 ns typical turn-on propagation delay, 200 ns turn-off delay, and 10–20 V gate drive supply range. It is used in motor drives, DC-DC converters, and induction heating systems.

For engineers reviewing the IRS2109STRPBF datasheet, IRS2109STRPBF pinout, IRS2109STRPBF application, or IRS2109STRPBF equivalent, key selection criteria include floating channel voltage tolerance, programmable deadtime capability (via external resistor on IRS21094 variant), undervoltage lockout thresholds, logic-level compatibility down to 3.3 V, and matched propagation delays between channels.

Technical Context

The IRS2109STRPBF integrates a ruggedized monolithic HVIC with latch-immune CMOS technology for reliable operation under high dV/dt transients. Its high-side channel uses bootstrap operation with VS-referenced level-shifting, enabling operation up to +600 V offset relative to COM.

It implements cross-conduction prevention logic with internal 540 ns fixed deadtime and includes separate undervoltage lockout circuits for both VCC and VB supplies. Input logic is compatible with 3.3 V, 5 V, and 15 V CMOS/LSTTL sources, and shutdown input (SD) disables both outputs simultaneously.

Key Specifications

Pinout & Package

IRS2109STRPBF is supplied in an 8-lead SOIC package with surface-mount footprint and RoHS-compliant finish. Thermal resistance R_thJA is 200 °C/W under standard board-mounted conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2104STRPBF, the IRS2109STRPBF adds full half-bridge functionality and 600 V floating capability; versus IR2110PbF, it trades DT programmability and thermal headroom for smaller 8-pin SOIC footprint and lower system BOM count.

Availability

IRS2109STRPBF is available at Aetrix Electronics and suitable for motor drives, induction heating systems, and DC-DC isolated converters requiring stable component supply and long-term industrial availability.

Supply support for IRS2109STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRS2109 series belongs to Infineon's high-voltage gate driver product line, engineered specifically for robust half-bridge control in high-noise, high-dV/dt power conversion systems.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IRS2109STRPBF is rated for up to 50 V/ns dV/dt on the VS pin under standard test conditions (8-lead PDIP package). This specification ensures reliable level-shifting operation without false triggering during fast switching transitions in hard-switched topologies.

Can IRS2109STRPBF drive IGBTs directly?

Yes - the IRS2109STRPBF delivers 120 mA source / 250 mA sink peak output current and supports gate drive voltages from 10 V to 20 V, making it suitable for driving medium-power IGBTs with gate charge ≤100 nC at switching frequencies up to 100 kHz.

Is bootstrap capacitor sizing specified in the datasheet?

The datasheet specifies minimum bootstrap capacitor value based on gate charge, switching frequency, and duty cycle. For typical 1 A IGBTs at 20 kHz and 95% duty cycle, a 0.1 µF X7R ceramic capacitor with low ESR is recommended to maintain >10 V on VB during high-side conduction.

Does IRS2109STRPBF include built-in deadtime?

Yes - it integrates a fixed 540 ns deadtime between LO turn-off and HO turn-on, and between HO turn-off and LO turn-on. This hardware-enforced interval prevents shoot-through without requiring external timing circuitry or controller-based delay insertion.