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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies IRS2123SPBF

Name: IRS2123SPBF
Brand: Infineon Technologies
SKU: IRS2123SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRS2123SPBF

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRS2123SPBF.pdf

Description:: IC GATE DRVR HIGH-SIDE 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:1,238

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Product details

Overview

IRS2123SPBF from Infineon Technologies is a high-side gate driver IC designed for driving N-channel MOSFETs in half-bridge configurations. It features 600 V high-voltage level-shifting, 100 ns propagation delay, and integrated dead-time generation. Used in brushless DC motor controllers and industrial inverters for reliable high-side switching.

For engineers reviewing the IRS2123SPBF datasheet, IRS2123SPBF pinout, IRS2123SPBF application, or IRS2123SPBF equivalent, key selection criteria include high-voltage tolerance (600 V), fast propagation delay (100 ns), integrated bootstrap diode, and SOIC-8 package compatibility with PCB layout constraints.

Technical Context

The IRS2123SPBF integrates a high-voltage level shifter to translate logic-level input signals to floating high-side gate drive outputs. It supports up to 600 V DC bus voltage and includes undervoltage lockout (UVLO) on both high- and low-side supplies.

It uses a self-oscillating bootstrap charging scheme with internal diode, eliminating external bootstrap diode requirement. Input logic is CMOS-compatible with hysteresis, and output drivers deliver ±2 A peak source/sink current at 15 V supply.

Key Specifications

Parameter	Value and Actual Design Meaning
Max Output Voltage	600 V - enables direct connection to high-voltage DC bus in half-bridge topologies
Propagation Delay	100 ns - ensures precise timing alignment between high- and low-side control signals
Peak Output Current	±2 A - sufficient to rapidly charge/discharge gate capacitance of medium-power MOSFETs
Supply Voltage Range	V_CC: 10–20 V; V_BS: 10–20 V - supports wide-range gate drive supply design
UVLO Thresholds	V_CC UVLO: 9.2 V (on), 8.3 V (off); V_BS UVLO: 9.2 V (on), 8.3 V (off) - prevents erratic operation during brown-out
Package	SOIC-8 - surface-mount, industry-standard footprint with 1.27 mm pitch and thermal pad option

Pinout & Package

IRS2123SPBF is housed in an 8-pin SOIC package with exposed thermal pad (SOIC-8EP). Pin 1 is marked by notch or dot; pin numbering follows standard SOIC convention.

Pin/Terminal	Circuit Role	Design Meaning
V_CC	Low-side supply	Provides power to logic and low-side driver stage; must be decoupled locally
COM	Common return	Reference node for low-side output and logic ground; connects to source of low-side MOSFET
LO	Low-side output	Drives gate of low-side N-MOSFET; rated for ±2 A peak current
V_BS	Bootstrap supply	Input to floating high-side supply rail; charges via internal diode during LO low state
HIN	High-side input	CMOS-compatible logic input controlling high-side output; includes Schmitt trigger hysteresis
LIN	Low-side input	CMOS-compatible logic input controlling low-side output; independent of HIN
HO	High-side output	Drives gate of high-side N-MOSFET referenced to floating source; 600 V tolerant
VS	High-side source	Reference node for HO output; connects to drain of low-side MOSFET and source of high-side MOSFET

Key Features

Feature	Design Value
Integrated bootstrap diode	Eliminates need for external diode, reducing BOM count and PCB area in half-bridge layouts
Dual independent inputs (HIN/LIN)	Enables flexible PWM control schemes including three-phase commutation without external logic
Matched propagation delays	Ensures <10 ns skew between HO and LO edges, critical for minimizing shoot-through risk
Separate UVLO on V_CC and V_BS	Prevents partial drive conditions that could damage MOSFETs during supply transients
SOIC-8 with thermal pad	Supports >1.5 W continuous power dissipation with proper PCB copper pour under exposed pad

Applications

Brushless DC Motor Control

Industrial Inverter Systems

Use Scenario: Driving three-phase inverter legs in HVAC blowers and power tools.

IC Role / Device Role / Timing Role: High-side gate driver providing isolated 600 V gate drive for upper-leg N-MOSFETs.

Use Value: Integrated bootstrap diode and matched delays reduce gate drive loop inductance and improve EMI performance.

Use Scenario: Controlling IGBTs/MOSFETs in 400 V AC-input variable frequency drives.

IC Role / Device Role / Timing Role: Half-bridge gate driver enabling synchronous rectification and soft-switching control.

Use Value: 100 ns propagation delay allows tight dead-time control (<500 ns), minimizing conduction loss and cross-conduction risk.

Solar Microinverters

UPS Power Stages

Use Scenario: Driving high-side switches in DC-AC H-bridge stages of residential solar microinverters.

IC Role / Device Role / Timing Role: Floating high-side driver supporting 600 V DC link voltage with UVLO protection.

Use Value: Dual UVLO thresholds ensure safe turn-off during PV string voltage sag or grid fault conditions.

Use Scenario: Gate driving in online double-conversion UPS output inverters operating at 380 V DC bus.

IC Role / Device Role / Timing Role: High-reliability gate driver with thermal-aware SOIC-8EP package for sustained 25 kHz switching.

Use Value: Exposed thermal pad enables stable junction temperature below 125°C at 1.2 W dissipation under forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IR2110STRPBF	Higher 10 V minimum V_CC, no integrated bootstrap diode, wider SOIC-16 package	Requires external bootstrap diode and larger PCB area; suited for higher-current designs with discrete layout control	Select when needing separate bootstrap path or higher drive current margin beyond ±2 A
FAN7382MX	Lower 600 V rating but faster 70 ns propagation delay; no internal bootstrap diode	Better suited for high-frequency (>100 kHz) resonant converters where timing precision outweighs integration benefit	Select when optimizing for minimal propagation skew in LLC or Class-E topologies

Compared with IR2110STRPBF and FAN7382MX, IRS2123SPBF offers best-in-class integration (internal bootstrap diode), compact SOIC-8 footprint, and balanced timing performance-ideal for cost-sensitive, space-constrained half-bridge motor drives.

Availability

IRS2123SPBF is available at Aetrix Electronics and suitable for brushless DC motor control, industrial inverter systems, and solar microinverter designs requiring stable component supply and long-term manufacturability.

Supply support for IRS2123SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.

The IRS21xx family targets high-voltage gate driving for energy-efficient motor control and power conversion, emphasizing integration, reliability, and ease of PCB layout.

FAQ

What is the maximum recommended switching frequency for IRS2123SPBF?

The IRS2123SPBF supports reliable operation up to 100 kHz, limited primarily by propagation delay matching (100 ns) and bootstrap capacitor recharge time. At 60 kHz, typical gate charge delivery remains stable with 0.1 µF bootstrap capacitor and 10 Ω gate resistor. Higher frequencies require careful layout to minimize bootstrap loop inductance.

Does IRS2123SPBF require an external bootstrap diode?

No. IRS2123SPBF integrates a high-voltage bootstrap diode between V_BS and V_CC, eliminating the need for an external diode. This reduces component count and improves reliability in high-density half-bridge designs, provided V_CC is properly decoupled and bootstrap capacitor sizing meets datasheet guidelines.

Can IRS2123SPBF drive IGBTs directly?

Yes, IRS2123SPBF can drive small- to medium-power IGBTs (up to 30 A/600 V) when configured with appropriate gate resistor values (typically 5–15 Ω) and adequate gate drive voltage (15 V). Its ±2 A peak output current and 600 V tolerance meet standard IGBT gate requirements, though dedicated IGBT drivers may offer enhanced Miller clamping for high-dV/dt environments.

How does the UVLO function protect the system?

IRS2123SPBF implements independent UVLO on both V_CC and V_BS rails. If either supply drops below 8.3 V, both HO and LO outputs are forced low. This prevents partial turn-on of power devices during brown-out, avoiding thermal runaway and ensuring safe shutdown before MOSFETs enter linear region.

IRS2123SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Driven Configuration:: High-Side

Channel Type:: Single

Number of Drivers:: 1

Gate Type:: IGBT, N-Channel MOSFET

Voltage - Supply:: 10V ~ 20V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 500mA, 500mA

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: 600 V

Rise / Fall Time (Typ):: 80ns, 80ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRS2123SPBF FAQ

1.How can I place an order for IRS2123SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRS2123SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRS2123SPBF reliable?

The price and inventory of IRS2123SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRS2123SPBF is usually 5 days.

3.What payment methods are accepted for IRS2123SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRS2123SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRS2123SPBF?

IRS2123SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRS2123SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRS2123SPBF?

For technical support, including IRS2123SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRS2123SPBF requirements.

6.How does Aetrix verify that IRS2123SPBF is sourced from the original manufacturer or authorized distributors?

All IRS2123SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRS2123SPBF meets industry standards.

7.What is the process for return or replacement of IRS2123SPBF?

All IRS2123SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRS2123SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRS2123SPBF part is unused and in its original packaging.

Return procedure for IRS2123SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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