Infineon Technologies IRS2153DPBF

Overview

IRS2153DPBF from Infineon Technologies is a self-oscillating 600 V half-bridge gate driver IC with integrated bootstrap FET, 15.4 V VCC zener clamp, 1.1 µs typical deadtime (IRS2153D variant), and CT/RT programmable oscillator. It drives high-side and low-side MOSFETs in resonant LLC and ballast lamp drivers.

For engineers reviewing the IRS2153DPBF datasheet, IRS2153DPBF pinout, IRS2153DPBF application, or IRS2153DPBF equivalent, key selection criteria include VOFFSET rating, dV/dt immunity (±50 V/ns), micropower startup current (130–170 µA), and non-latched shutdown threshold (CT < 1/6 × VCC).

Technical Context

The IRS2153DPBF integrates a CMOS 555-style oscillator front-end with HVIC-level-shifted outputs, enabling robust floating high-side drive without external bootstrap diodes. Its internal deadtime generator enforces 1.1 µs minimum separation between HO and LO transitions to prevent shoot-through.

It features latch-immune logic with ±50 V/ns dV/dt tolerance on VS and dedicated UVLO on both VCC (11.0 V typ. turn-on) and VBS (9.0 V typ. turn-on), ensuring reliable operation under line transients and startup conditions.

Key Specifications

Pinout & Package

IRS2153DPBF is housed in an 8-lead SOIC package (SO8) with standard surface-mount footprint and thermal resistance R_thJA = 128 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-oscillating half-bridge driver applications.

Compared with IRS21531DPBF and IR2153DPBF, the IRS2153DPBF delivers optimal balance of integration (internal bootstrap FET), robustness (±50 V/ns dV/dt), and timing flexibility (RT/CT programmability), making it ideal for new CFL, LED, and induction heating designs.

Availability

IRS2153DPBF is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, LED driver power stages, and induction heating modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRS2153DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IRS2153 family targets cost-sensitive, self-oscillating half-bridge applications such as lighting ballasts and resonant power supplies, emphasizing integration, reliability, and ease of implementation.

FAQ

What is the purpose of the CT pin shutdown feature?

The CT pin triggers non-latched shutdown when its voltage falls below 2.3 V (1/6 × VCC), typically during overcurrent or excessive VS node ringing. This protects external MOSFETs by halting oscillation until normal conditions resume-no external reset is needed, and operation resumes automatically once CT voltage recovers above threshold.

Can IRS2153DPBF drive SiC MOSFETs?

No-IRS2153DPBF is optimized for silicon MOSFETs with gate thresholds ~2–4 V and total gate charge < 20 nC. Its 180/260 mA drive strength and 1.1 µs deadtime are insufficient for fast-switching SiC devices, which require higher peak current, tighter deadtime control, and negative gate turn-off capability not present in this IC.

How does the internal bootstrap FET simplify circuit design?

The internal bootstrap FET replaces the external diode traditionally used to charge the high-side bootstrap capacitor. This eliminates one component, reduces PCB area, removes reverse recovery concerns, and improves reliability-especially in space-constrained CFL and LED driver applications where board real estate is critical.

Is a separate VCC supply required during startup?

Yes-a low-current, current-limited VCC supply (e.g., via high-value resistor from rectified line) is required to initiate oscillation. Once running, the internal bootstrap FET charges VB, and the IC sustains operation from the bootstrap capacitor and auxiliary winding feedback; however, initial VCC must exceed 11.0 V to exit UVLO and begin CT ramping.