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Infineon Technologies IRS21850SPBF

Part No.:
IRS21850SPBF
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRS21850SPBF.pdf
Description:
IC GATE DRVR HIGH-SIDE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,418

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Product details

Overview

IRS21850SPBF from Infineon Technologies is a high-side gate driver IC designed for driving N-channel MOSFETs in half-bridge configurations. It features 600 V high-voltage level-shifting, 2.5 A peak source/sink current, and integrated bootstrap diode. Used in BLDC motor inverters and industrial AC drives requiring robust high-side switching.

For engineers reviewing the IRS21850SPBF datasheet, IRS21850SPBF pinout, IRS21850SPBF application, or IRS21850SPBF equivalent, key selection criteria include high-voltage isolation capability, propagation delay matching (typ. 25 ns), undervoltage lockout thresholds (VCC = 10.1 V / 8.8 V, VBS = 9.2 V / 7.7 V), and thermal shutdown protection.

Technical Context

This monolithic high-side driver integrates a level-shift circuit to translate logic-level input signals across a 600 V floating high-side rail. It uses a pulsed-current bootstrap supply architecture with internal diode, eliminating external bootstrap diode requirement.

The device implements dual undervoltage lockout (UVLO) on both VCC and VBS rails, with hysteresis to prevent oscillation during brown-out conditions. Propagation delays are matched between HO and LO outputs to minimize shoot-through risk in bridge topologies.

Key Specifications

ParameterValue and Actual Design Meaning
Max Output Voltage600 V - supports high-side switching in 400 V DC bus applications
Peak Output Current±2.5 A - sufficient to drive 10 nF gate capacitance with <100 ns rise/fall times
VCC UVLO Threshold10.1 V (on), 8.8 V (off) - ensures stable logic operation under supply variation
VBS UVLO Threshold9.2 V (on), 7.7 V (off) - prevents high-side FET turn-on when bootstrap voltage is insufficient
Propagation Delay25 ns (typ.) - enables PWM operation up to 1 MHz with timing margin
Delay Matching±5 ns - minimizes dead-time uncertainty in complementary half-bridge control

Pinout & Package

IRS21850SPBF is housed in an 8-pin SOIC package with exposed thermal pad (SOIC-8EP), rated for 1.5 W power dissipation at TA = 25°C.

Pin/TerminalCircuit RoleDesign Meaning
VCCLow-side supply railProvides power to logic and output stage; requires 10–20 V regulated supply
COMLow-side return pathCommon reference for LO output and logic ground; must be low-inductance connection
HINHigh-side inputTTL/CMOS-compatible input controlling HO output; active-high logic
LINLow-side inputTTL/CMOS-compatible input controlling LO output; active-high logic
HOHigh-side gate drive outputDrives gate of high-side N-MOSFET referenced to floating VS node
LOLow-side gate drive outputDrives gate of low-side N-MOSFET referenced to COM
VSFloating high-side source referenceConnects to switch node between high- and low-side FETs; handles 600 V transient swings
VBSBootstrap supply inputAccepts charge from bootstrap capacitor; internal diode enables self-powered high-side operation

Key Features

FeatureDesign Value
Integrated Bootstrap DiodeEliminates external diode, reducing BOM count and PCB area in half-bridge layouts
Dual Independent UVLOSeparate monitoring of VCC and VBS prevents false turn-on during bootstrap recharge cycles
Matched Propagation DelaysEnsures symmetrical timing between HO and LO, critical for minimizing cross-conduction in motor drives
Thermal Shutdown ProtectionShuts down outputs if junction temperature exceeds 150°C, preventing latch-up or permanent damage

Applications

BLDC Motor InverterIndustrial AC Drive

Use Scenario: Three-phase inverter driving 300–500 V DC bus-fed brushless DC motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side gate driver for upper-leg N-MOSFETs in each phase leg, synchronized with low-side drivers.

Use Value: 600 V rating withstands voltage spikes during commutation; ±2.5 A drive strength ensures fast MOSFET switching with minimal conduction loss.

Use Scenario: Variable-frequency drive controlling induction motors in pump and fan systems.

IC Role / Device Role / Timing Role: Half-bridge gate driver enabling precise PWM control of motor phase voltages via IGBT or MOSFET switches.

Use Value: Dual UVLO prevents erratic switching during line dips; matched delays support tight dead-time control for EMI reduction.

Solar MicroinverterUPS Half-Bridge Stage

Use Scenario: DC–AC conversion stage in single-phase photovoltaic microinverters operating at 400 V DC input.

IC Role / Device Role / Timing Role: High-side driver for synchronous rectification or H-bridge switching in isolated DC–AC topology.

Use Value: Integrated bootstrap diode simplifies high-voltage floating supply design; thermal shutdown protects against overload during grid faults.

Use Scenario: Bidirectional half-bridge in online UPS systems managing battery-to-AC and AC-to-battery energy flow.

IC Role / Device Role / Timing Role: Gate driver for high-efficiency, high-reliability power conversion with reverse current capability.

Use Value: 25 ns propagation delay enables high-frequency PWM (>100 kHz), improving transformer size and filtering requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR2110SPBFHigher VBS UVLO (12 V on / 10 V off); no integrated bootstrap diode; 2.0 A peak currentRequires external bootstrap diode; suited for higher-reliability industrial designs where discrete component control is preferredSelect when external diode placement improves thermal management or when legacy IR2110 footprint compatibility is required
FAN7382MXLower max voltage (600 V same), but only 1.5 A peak current; no thermal shutdown; SOIC-14 packageLacks overtemperature protection; used in cost-sensitive consumer inverters with lower power densityChoose for lower-cost, lower-power (<500 W) applications where thermal margin is assured and BOM cost is prioritized

Compared with IR2110SPBF and FAN7382MX, IRS21850SPBF offers integrated bootstrap diode and thermal shutdown-critical for compact, thermally constrained motor drives-while maintaining 600 V capability and tighter delay matching for high-frequency PWM stability.

Availability

IRS21850SPBF is available at Aetrix Electronics and suitable for BLDC motor inverters, industrial AC drives, solar microinverters, and UPS half-bridge stages requiring stable component supply and long-term production continuity.

Supply support for IRS21850SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRS high-voltage gate driver product line targets robust, high-efficiency power conversion in motor control, renewable energy, and uninterruptible power systems-designed for reliability under harsh electrical and thermal stress.

FAQ

What is the minimum bootstrap capacitor value recommended for IRS21850SPBF?

Infineon specifies a minimum 0.1 µF ceramic capacitor for typical 20 kHz switching with 10 nF gate load. Larger values (≥0.22 µF) are recommended for higher duty cycles or extended conduction periods to maintain VBS above 7.7 V UVLO threshold. Capacitor voltage rating must exceed 25 V with X7R dielectric for stability.

Can IRS21850SPBF drive IGBTs directly?

Yes-IRS21850SPBF can drive small- to medium-size IGBTs (up to 50 A, 600 V) with gate charge ≤150 nC. Its ±2.5 A peak current and 600 V blocking capability meet standard IGBT gate drive requirements. For larger IGBTs, external gate resistors or buffer stages are needed to manage Miller plateau charging.

Does IRS21850SPBF require external pull-down resistors on HIN/LIN inputs?

No-HIN and LIN inputs have internal pull-down resistors (~100 kΩ) ensuring defined low state when unconnected. However, for noise immunity in high-dv/dt environments, a 10 kΩ external pull-down is recommended. Input threshold is TTL-compatible (VIL ≤ 0.8 V, VIH ≥ 2.0 V).

How does the thermal shutdown function behave during continuous overload?

When junction temperature exceeds 150°C, IRS21850SPBF disables both HO and LO outputs and holds them low until temperature drops below 135°C hysteresis threshold. This latched shutdown prevents repeated cycling and allows safe cooldown before resuming operation upon valid input signals.

IRS21850SPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Single
Number of Drivers:
1
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 20V
Logic Voltage - VIL, VIH:
0.8V, 2.5V
Current - Peak Output (Source, Sink):
4A, 4A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
15ns, 15ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

IRS21850SPBF FAQ

1.How can I place an order for IRS21850SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRS21850SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRS21850SPBF reliable?

The price and inventory of IRS21850SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRS21850SPBF is usually 5 days.

3.What payment methods are accepted for IRS21850SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRS21850SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRS21850SPBF?

IRS21850SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRS21850SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRS21850SPBF?

For technical support, including IRS21850SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRS21850SPBF requirements.

6.How does Aetrix verify that IRS21850SPBF is sourced from the original manufacturer or authorized distributors?

All IRS21850SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRS21850SPBF meets industry standards.

7.What is the process for return or replacement of IRS21850SPBF?

All IRS21850SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRS21850SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRS21850SPBF part is unused and in its original packaging.

Return procedure for IRS21850SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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