Infineon Technologies IRS21853STRPBF

Overview

IRS21853STRPBF from Infineon Technologies is a high-side gate driver IC designed for driving N-channel MOSFETs in half-bridge configurations. It features 600 V high-voltage level-shifting, 1.4 A peak source/sink current, and integrated bootstrap diode. It operates with 10–20 V V_DD, supports 15 ns propagation delay, and is used in motor control inverters and SMPS power stages.

For engineers reviewing the IRS21853STRPBF datasheet, IRS21853STRPBF pinout, IRS21853STRPBF application, or IRS21853STRPBF equivalent, key selection criteria include high-side drive capability, bootstrap-based floating supply operation, propagation delay matching, and 600 V HVIC isolation rating.

Technical Context

The IRS21853STRPBF integrates a high-voltage level shifter and driver stage to enable robust high-side switching in bridge topologies. Its logic input is CMOS/TTL compatible, and it uses a monolithic high-voltage IC (HVIC) process for reliable operation up to 600 V.

It employs a self-oscillating bootstrap capacitor charging scheme during low-side conduction, with built-in undervoltage lockout (UVLO) on both V_CC and V_BS rails. The device lacks internal dead-time control and requires external timing coordination.

Key Specifications

Pinout & Package

IRS21853STRPBF is housed in a 16-pin SOIC package with wide-body (SOIC-16W) footprint and creepage-enhanced insulation for high-voltage applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Compared with IR2110SPBF and FAN7382MX, IRS21853STRPBF offers optimal balance of integrated bootstrap functionality, 600 V rating, and 1.4 A drive for 400 V industrial inverters-without requiring external diodes or sacrificing timing precision.

Availability

IRS21853STRPBF is available at Aetrix Electronics and suitable for motor control inverters, industrial SMPS, solar microinverters, and appliance power stages requiring stable component supply and long-term manufacturability.

Supply support for IRS21853STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and R&D infrastructure.

The IRS21853STRPBF belongs to Infineon's high-voltage gate driver product line, engineered for reliability in industrial motor drives and high-efficiency power conversion systems operating up to 600 V.

FAQ

What is the maximum recommended bootstrap capacitor value for IRS21853STRPBF?

The datasheet specifies a typical bootstrap capacitor value of 0.1 µF ceramic (X7R), rated ≥25 V. Larger values (e.g., 0.22 µF) may be used to extend hold-up time during low-duty-cycle operation, but excessive capacitance increases recharge time and can cause V_BS droop during high-frequency PWM. Layout parasitics and switching frequency must be validated per application.

Does IRS21853STRPBF support 3.3 V logic inputs?

Yes-IRS21853STRPBF accepts 3.3 V logic inputs directly. Its HIN and LIN inputs have TTL/CMOS thresholds: VIH = 2.5 V min, VIL = 0.8 V max. No level-shifting circuitry is required when interfacing with 3.3 V microcontrollers or FPGA I/O banks, provided noise margins and slew rate meet datasheet timing requirements.

Can IRS21853STRPBF drive SiC MOSFETs?

IRS21853STRPBF can drive low-to-mid voltage SiC MOSFETs (e.g., 650 V class) with Q_g ≤ 35 nC, given its 1.4 A peak current and 15 ns propagation delay. However, it lacks active Miller clamp or negative turn-off capability, so external gate resistors and RC snubbers are recommended to suppress dv/dt-induced false turn-on in high-speed SiC applications.

Is there an internal pull-down on the HIN and LIN inputs?

No-IRS21853STRPBF does not include internal pull-down resistors on HIN or LIN. External 10–100 kΩ pull-downs are required on both inputs to ensure defined low-state during power-up, reset, or open-circuit conditions. This prevents unintended high-side or low-side conduction that could cause shoot-through in bridge configurations.