Infineon Technologies IRS2330STRPBF

Overview

IRS2330STRPBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed for driving N-channel power MOSFETs and IGBTs in motor control, inverters, and DC-DC converters. It features independent high-side and low-side outputs, 600 V high-side floating capability, typical propagation delay of 125 ns, and integrated dead-time generation of 500 ns. Used in 3-phase BLDC motor drives requiring robust shoot-through protection.

For engineers reviewing the IRS2330STRPBF datasheet, IRS2330STRPBF pinout, IRS2330STRPBF application, or IRS2330STRPBF equivalent, key selection criteria include high-side voltage rating, propagation delay matching between channels, integrated dead-time accuracy, and bootstrap diode integration for gate drive reliability.

Technical Context

The IRS2330STRPBF implements a dual-channel, non-inverting logic-input gate driver with independent high-side (HIN/HO) and low-side (LIN/LO) control paths. It uses a level-shifted high-side driver architecture with internal floating supply regulation and built-in undervoltage lockout (UVLO) thresholds of 10.2 V (high-side) and 8.3 V (low-side).

It integrates a programmable dead-time generator (500 ns nominal) between HO and LO outputs to prevent cross-conduction, and supports bootstrap-based high-side operation up to 600 V DC bus voltage. The device operates from a single 12–20 V V_DD supply and accepts CMOS/TTL-compatible input logic levels.

Key Specifications

Pinout & Package

IRS2330STRPBF is housed in a 28-pin SOIC wide-body package (SOIC-28W), with creepage distance optimized for 600 V isolation requirements and thermal pad for enhanced power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104SPBF and UCC27211D, IRS2330STRPBF uniquely combines 600 V high-side capability, integrated dead-time, and on-die bootstrap diode - reducing external component count while maintaining timing precision in compact motor inverter designs.

Availability

IRS2330STRPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRS2330STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The IRS2330STRPBF belongs to Infineon's high-voltage gate driver product line, engineered specifically for robust, high-efficiency motor control and power conversion systems operating up to 600 V DC bus.

FAQ

What is the maximum recommended bootstrap capacitor value for IRS2330STRPBF?

The datasheet specifies a maximum bootstrap capacitor value of 1 μF for stable high-side operation. Larger values increase charge time and risk violating the minimum off-time requirement for bootstrap recharge, potentially causing high-side UVLO. A 0.1–0.47 μF X7R ceramic capacitor is typically used to balance hold-up time and recharge efficiency at 20 kHz PWM frequencies.

Does IRS2330STRPBF support 3.3 V logic inputs directly?

Yes - IRS2330STRPBF accepts 3.3 V CMOS/TTL logic inputs directly. Its input threshold is defined as V_IL ≤ 0.8 V and V_IH ≥ 2.0 V, ensuring reliable recognition of standard 3.3 V logic high/low states without external level shifting or pull-up resistors.

Can IRS2330STRPBF drive SiC MOSFETs effectively?

Yes - its ±2 A peak output current, 125 ns propagation delay, and 10 ns delay matching enable effective gate driving of common 650 V SiC MOSFETs (e.g., IMW120R045M1H). Layout must minimize gate loop inductance, and gate resistor selection should balance switching speed against dV/dt-induced noise and ringing.

Is there an internal pull-down on the LIN and HIN pins?

No - IRS2330STRPBF has no internal pull-down resistors on HIN or LIN. External 10–100 kΩ pull-down resistors are required on both inputs to ensure defined low state during power-up, reset, or controller disconnection, preventing unintended high-side turn-on and potential shoot-through.