Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRS2509STRPBF

Part No.:
IRS2509STRPBF
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRS2509STRPBF.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,706

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRS2509STRPBF from Infineon Technologies (formerly International Rectifier) is a 600V high-voltage, high-speed half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with matched 750 ns / 250 ns propagation delays, internal 530 ns dead-time, and 3.3 V/5 V/15 V logic-compatible inputs. It operates in HID electronic ballasts and resonant DC-DC converters where robust floating channel operation up to 600 V offset is required.

For engineers reviewing the IRS2509STRPBF datasheet, IRS2509STRPBF pinout, IRS2509STRPBF application, or IRS2509STRPBF equivalent, key selection criteria include high-side floating voltage tolerance (600 V), under-voltage lockout thresholds (8.2 V hysteresis), pulsed output current capability (120 mA HO / 250 mA LO), and integrated shoot-through prevention logic.

Technical Context

The IRS2509STRPBF integrates a proprietary HVIC process with latch-immune CMOS logic to support reliable high-side switching at up to 600 V VS–COM offset. Its dual-channel architecture provides in-phase high-side output relative to IN, with matched turn-on/off propagation delays (≤60 ns mismatch) and fixed internal dead-time (530 ns typical) between LO turn-off and HO turn-on.

It features independent UVLO on both VCC and VB supplies (8.2 V threshold with 0.7 V hysteresis), shutdown input (/SD) that forces both outputs to high-impedance state, and lower di/dt gate drive design to improve noise immunity during fast switching transitions in high dv/dt environments.

Key Specifications

ParameterValue and Actual Design Meaning
Max Floating Voltage (VS)600 V - enables direct driving of high-side N-MOSFET/IGBT in buck, half-bridge, or resonant topologies without external level-shifting.
HO/LO Propagation Delay750 ns / 250 ns typ. - ensures precise timing control for synchronous rectification and zero-voltage switching circuits.
Internal Dead-Time530 ns typ. - prevents shoot-through by guaranteeing minimum off-time between LO turn-off and HO turn-on.
Output Drive Current120 mA (HO source) / 250 mA (LO sink) - sufficient to charge/discharge 1 nF gate capacitance in <100 ns for typical power devices.
Logic Input Compatibility3.3 V / 5 V / 15 V CMOS/TTL - allows direct interface with microcontrollers, DSPs, and FPGA GPIO without level translation.
VCC & VB UVLO Threshold8.2 V with 0.7 V hysteresis - prevents erratic switching during brown-out conditions and ensures clean startup/shutdown sequencing.
ESD RatingHBM Class 1C (±1000 V), MM Class B (±200 V) - meets industrial handling requirements without additional protection circuitry.

Pinout & Package

IRS2509STRPBF is housed in an 8-lead SOIC (SOIC-8N) package with creepage/clearance optimized for 600 V isolation. The package is RoHS-compliant and rated MSL2 per J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
INLogic input controlDrives both HO and LO in phase; compatible with 3.3 V–15 V logic levels.
/SDShutdown enableActive-low input; pulls both HO and LO to high-impedance when asserted.
VBHigh-side floating supplyProvides bias for high-side driver stage; referenced to VS, not COM.
HOHigh-side gate outputDrives N-channel MOSFET/IGBT gate referenced to VS; capable of sourcing 120 mA.
VSHigh-side floating returnReturn path for high-side channel; withstands −50 V transient to +600 V DC offset vs. COM.
VCCLow-side & logic supplyBias for low-side driver and logic core; 10–20 V operating range.
LOLow-side gate outputDrives N-channel MOSFET/IGBT gate referenced to COM; sinks 250 mA.
COMLow-side ground referenceCommon return for VCC, LO, and logic inputs; isolated from VS by internal level shifter.

Key Features

FeatureDesign Value
Matched propagation delay≤60 ns max difference between HO and LO turn-on/turn-off delays - critical for symmetrical PWM in resonant converters.
Integrated dead-timeFixed 530 ns internal dead-time - eliminates need for external RC timing networks and reduces PCB footprint.
Negative transient toleranceWithstands −50 V @ 50 ns on VS–COM - protects against parasitic ringing in hard-switched half-bridges.
Cross-conduction preventionDedicated logic block enforces non-overlapping HO/LO states - prevents shoot-through even during rapid IN transitions.
Lower di/dt gate driveControlled slew rate on HO/LO edges - reduces EMI generation and improves immunity to capacitive coupling in high-noise environments.

Applications

HID Electronic BallastResonant LLC Converter

Use Scenario: Driving half-bridge power stage in 70–400 W automotive and commercial HID lamp ballasts.

IC Role / Device Role / Timing Role: High-side/low-side gate driver providing synchronized, dead-time-controlled switching at 200–500 kHz.

Use Value: Enables stable lamp ignition and regulation via precise gate timing and 600 V floating capability across lamp aging cycles.

Use Scenario: Controlling primary-side switches in high-efficiency server PSU LLC resonant converters.

IC Role / Device Role / Timing Role: Half-bridge driver delivering matched delays and internal dead-time to maintain ZVS over wide load and line ranges.

Use Value: Reduces switching losses and EMI by ensuring consistent timing margins and eliminating external dead-time components.

Induction Heating InverterMotor Drive Half-Bridge

Use Scenario: Gate driving parallel IGBTs in 1–5 kW domestic induction cooktop inverters.

IC Role / Device Role / Timing Role: Robust high-voltage driver with negative transient tolerance for high dv/dt tank circuit operation.

Use Value: Sustains reliable operation despite −50 V VS undershoot spikes during zero-current switching transitions.

Use Scenario: Driving N-channel MOSFET half-bridge in 24–48 V BLDC motor controllers for industrial automation.

IC Role / Device Role / Timing Role: Logic-compatible gate driver enabling direct MCU interface and fast response to commutation signals.

Use Value: Supports 3.3 V microcontroller control without level shifters while maintaining 250 mA LO sink for fast turn-off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRS2109SPBFSame SOIC-8 package; improved propagation delay matching (±10 ns vs. ±60 ns); higher peak output current (260 mA LO).Recommended for new designs per manufacturer; supports higher-frequency resonant topologies requiring tighter timing control.Select IRS2109SPBF when designing new systems needing enhanced timing precision and higher drive strength.
IR2110PBFHigher VB rating (600 V same), but no internal dead-time; requires external dead-time circuitry; wider VCC range (10–20 V same).Suitable for legacy designs where external timing control is already implemented; lacks integrated shoot-through protection logic.Choose IR2110PBF only if existing layout accommodates external dead-time generation and timing flexibility is prioritized over integration.

Compared with IRS2509STRPBF, IRS2109SPBF offers tighter delay matching and higher drive current for next-gen resonant converters, while IR2110PBF trades integration for configurability-making IRS2509STRPBF optimal for cost-sensitive HID ballasts where its fixed dead-time and proven reliability are sufficient.

Availability

IRS2509STRPBF is available at Aetrix Electronics and suitable for HID lighting systems, resonant DC-DC converters, induction heating inverters, and industrial motor drives requiring stable component supply and long-term industrial qualification.

Supply support for IRS2509STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage gate driver innovation and industrial-grade reliability.

The IRS2509STRPBF belongs to Infineon's HVIC (High-Voltage IC) product line, designed specifically for robust, integrated half-bridge gate driving in lighting, industrial power conversion, and resonant topology applications.

FAQ

What is the maximum allowable negative transient on the VS pin?

The IRS2509STRPBF tolerates −50 V transients on the VS pin relative to COM, with pulse width ≤50 ns. This rating is guaranteed by design and supports reliable operation in hard-switched half-bridge configurations where parasitic ringing occurs during turn-off transitions.

Does IRS2509STRPBF require external bootstrap components?

No. IRS2509STRPBF does not use bootstrap charging; it relies on an isolated floating supply (VB) referenced to VS. A dedicated high-voltage DC-DC converter or charge pump must supply VB, unlike bootstrap-based drivers that depend on LO switching to recharge.

Can IRS2509STRPBF drive both MOSFETs and IGBTs?

Yes. Its 120 mA HO source and 250 mA LO sink currents, combined with 600 V floating capability and lower di/dt gate drive, support safe and efficient switching of both N-channel power MOSFETs and IGBTs in half-bridge configurations.

Is IRS2509STRPBF pin-compatible with IRS2109SPBF?

Yes. IRS2509STRPBF and IRS2109SPBF share identical SOIC-8 pinout, pin functions, and electrical interface. However, IRS2109SPBF improves propagation delay matching and adds enhanced ESD protection, making it a drop-in upgrade for new designs.

IRS2509STRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 20V
Logic Voltage - VIL, VIH:
0.8V, 2.2V
Current - Peak Output (Source, Sink):
200mA, 350mA
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
150ns, 50ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

IRS2509STRPBF FAQ

1.How can I place an order for IRS2509STRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRS2509STRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRS2509STRPBF reliable?

The price and inventory of IRS2509STRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRS2509STRPBF is usually 5 days.

3.What payment methods are accepted for IRS2509STRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRS2509STRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRS2509STRPBF?

IRS2509STRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRS2509STRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRS2509STRPBF?

For technical support, including IRS2509STRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRS2509STRPBF requirements.

6.How does Aetrix verify that IRS2509STRPBF is sourced from the original manufacturer or authorized distributors?

All IRS2509STRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRS2509STRPBF meets industry standards.

7.What is the process for return or replacement of IRS2509STRPBF?

All IRS2509STRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRS2509STRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRS2509STRPBF part is unused and in its original packaging.

Return procedure for IRS2509STRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRS2509STRPBF Tags

  • IRS2509STRPBF
  • IRS2509STRPBF PDF
  • IRS2509STRPBF Datasheet
  • IRS2509STRPBF Specifications
  • IRS2509STRPBF Images
  • Infineon Technologies
  • Infineon Technologies IRS2509STRPBF
  • Buy IRS2509STRPBF
  • IRS2509STRPBF Price
  • IRS2509STRPBF Distributor
  • IRS2509STRPBF Supplier
  • IRS2509STRPBF Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER