Infineon Technologies IRS2608DSTRPBF

Overview

IRS2608DSTRPBF from Infineon Technologies is a high-voltage, half-bridge gate driver IC designed for driving N-channel MOSFETs and IGBTs in synchronous buck, resonant, and motor control topologies. It features 600 V high-side voltage capability, 150 ns typical propagation delay, integrated bootstrap diode, and shoot-through protection with 500 ns dead-time. Used in BLDC motor inverters and industrial SMPS.

For engineers reviewing the IRS2608DSTRPBF datasheet, IRS2608DSTRPBF pinout, IRS2608DSTRPBF application, or IRS2608DSTRPBF equivalent, key selection criteria include high-side floating operation up to 600 V, matched propagation delays between high- and low-side channels, integrated level-shifted input logic, and thermal shutdown with hysteresis.

Technical Context

The IRS2608DSTRPBF integrates independent high-side and low-side drivers with CMOS/TTL-compatible inputs and non-inverting output logic. Its level-shifting circuit enables reliable high-side operation under fast dV/dt transients up to ±50 V/ns, while internal undervoltage lockout (UVLO) protects both channels at VCC < 10.5 V and VB < 12.5 V.

It employs a pulsed-level-shift architecture with built-in adaptive dead-time generation to prevent cross-conduction. The device operates from a single 12–20 V supply and supports input logic thresholds of 2.5 V (VIH) and 0.8 V (VIL), enabling direct interface with microcontrollers and PWM controllers.

Key Specifications

Pinout & Package

IRS2608DSTRPBF is housed in an 8-pin SOIC package with standard 1.27 mm pitch and exposed thermal pad (SOIC-8N). Pin 1 is marked by a beveled corner; the package meets JEDEC MS-012AC and RoHS-compliant reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104SPBF and FAN7382MX, IRS2608DSTRPBF delivers superior integration (integrated bootstrap diode), tighter timing control (150 ns vs. ≥250 ns), and active thermal protection-making it optimal for compact, high-reliability, and thermally constrained half-bridge systems.

Availability

IRS2608DSTRPBF is available at Aetrix Electronics and suitable for BLDC motor inverters, industrial SMPS, solar microinverters, and appliance motor control requiring stable component supply and long-term manufacturability.

Supply support for IRS2608DSTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The IRS2608DSTRPBF belongs to Infineon's high-voltage gate driver product line, engineered specifically for robust, high-efficiency half-bridge switching in motor drives and switched-mode power supplies.

FAQ

What is the maximum recommended switching frequency for IRS2608DSTRPBF?

The IRS2608DSTRPBF supports reliable operation up to 200 kHz, limited primarily by propagation delay matching (150 ns typ) and output drive strength (±250 mA). At frequencies above 150 kHz, careful attention to PCB layout, bootstrap capacitor sizing (≥0.1 µF ceramic), and gate resistor selection is required to maintain timing integrity and minimize shoot-through risk.

Does IRS2608DSTRPBF require an external bootstrap diode?

No. IRS2608DSTRPBF integrates a high-voltage bootstrap diode rated for 600 V and 100 mA continuous current, eliminating the need for an external diode. This reduces component count, improves reliability, and simplifies PCB layout-especially in compact inverter modules where routing high-dV/dt bootstrap paths is challenging.

How does the shutdown (SD) pin function?

The SD pin is an active-low input that disables both HO and LO outputs when pulled below 0.5 V. When asserted, the driver enters high-impedance state with no gate drive output. Internal pull-up ensures default enable if left unconnected. It supports system-level fault handling, such as overcurrent or overtemperature events detected by external circuitry.

Can IRS2608DSTRPBF drive SiC or GaN MOSFETs?

Yes-IRS2608DSTRPBF can drive SiC and GaN MOSFETs in half-bridge configurations, provided gate resistors are selected to limit dV/dt and ringing. Its ±250 mA peak output current and 150 ns propagation delay meet typical requirements for 650 V SiC and 650 V GaN devices operating below 150 kHz. Layout optimization remains critical for high-speed switching fidelity.