Infineon Technologies IRS4426SPBF

Overview

IRS4426SPBF from Infineon Technologies (formerly International Rectifier) is a dual low-side gate driver IC designed to drive power MOSFETs and IGBTs in high-speed switching applications. It features matched 50 ns propagation delays per channel, ±2.3 A/±3.3 A peak output current capability, 6–20 V gate drive supply range, and CMOS/LSTTL-compatible Schmitt-trigger inputs. It is used in DC-DC converters where precise timing and robust low-side drive are required.

For engineers reviewing the IRS4426SPBF datasheet, IRS4426SPBF pinout, IRS4426SPBF application, or IRS4426SPBF equivalent, key selection criteria include dual-channel propagation delay matching, logic-level compatibility (3.3 V/5 V), output current asymmetry (IO+ = 2.3 A, IO− = 3.3 A), SOIC8N thermal resistance (RthJA = 200 °C/W), and industrial qualification per JEDEC.

Technical Context

The IRS4426SPBF integrates two independent, latch-immune CMOS driver channels with matched propagation delay (50 ns typ.) and in-phase input-to-output response. Each channel uses a high-pulse-current buffer stage optimized to minimize cross-conduction during switching transitions.

It operates with a fixed VCC supply of 6–20 V referenced to COM, supports logic inputs from 0 to VCC, and delivers asymmetric peak output currents: +2.3 A (source) and −3.3 A (sink), enabling fast turn-on and robust turn-off of power switches in hard-switched topologies.

Key Specifications

Pinout & Package

IRS4426SPBF is housed in an SOIC8N (Small Outline Integrated Circuit, 8-pin, narrow body, 150 mil width) package with standard 1.27 mm pitch and exposed pad not present. Thermal performance assumes board-mounted, still-air conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with IRS2004PBF and LM5112MYX/NOPB, the IRS4426SPBF uniquely provides factory-matched propagation delay, industrial temperature qualification, and dual-channel integration in SOIC8-making it optimal for space-constrained, timing-critical, and ruggedized low-side drive applications.

Availability

IRS4426SPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and industrial PLC output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRS4426SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors and driver ICs for industrial, automotive, and computing markets.

The IRS4426SPBF belongs to Infineon's legacy IR high-speed gate driver product line, engineered specifically for robust, low-latency, dual-channel low-side drive in demanding power conversion and motor control systems.

FAQ

What is the maximum allowable VCC voltage for continuous operation?

The absolute maximum VCC is 25 V, but the recommended operating range is 6–20 V. Operation above 20 V risks exceeding internal oxide voltage limits and reduces long-term reliability. At 20 V, the device delivers full rated output current and remains within thermal limits up to 125 °C ambient when properly heatsinked.

Can IRS4426SPBF drive high-side switches?

No. IRS4426SPBF is a dedicated low-side driver with outputs referenced to COM (ground). It lacks bootstrap circuitry, high-voltage level-shifting, or floating supply capability required for high-side N-MOSFET drive. For high-side applications, Infineon's IRS21844 or IR2110 series are appropriate alternatives.

Is the NC pin (Pin 7) required to be grounded?

No. Pin 7 is internally unconnected and must remain electrically floating. Tying it to COM or VCC may cause unpredictable behavior or increased leakage. Layout best practice is to omit copper connection to this pad and avoid solder mask openings beneath it.

How does the asymmetric IO+ and IO− affect gate drive performance?

The 2.3 A source / 3.3 A sink asymmetry prioritizes fast gate discharge over charge, reducing turn-off time by ~30% compared to symmetrical drivers. This mitigates shoot-through in hard-switched topologies and improves efficiency in converters where FET turn-off losses dominate.