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Infineon Technologies SDP10S30
- Part No.:
- SDP10S30
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-3
- Datasheet:
-
SDP10S30.pdf
- Description:
- DIODE SIL CARB 300V 10A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,076
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Product details
Overview
SDP10S30 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 300 V repetitive peak reverse voltage, 10 A continuous forward current at TC = 100 °C, and 23 nC total capacitive charge at Tj = 150 °C. It features zero reverse recovery, temperature-independent switching, and no forward recovery-enabling high-efficiency PFC and solar inverter boost stages.
For engineers reviewing the SDP10S30 datasheet, SDP10S30 pinout, SDP10S30 application, or SDP10S30 equivalent, key selection criteria include its SiC-based zero-recovery behavior, low Qc for reduced switching loss, thermal robustness up to 175 °C junction temperature, and TO-220-3 package compatibility with standard heatsink mounting.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency power conversion. Its unipolar conduction eliminates minority-carrier storage, resulting in truly soft, lossless turn-off and immunity to di/dt-induced oscillation.
Designed for operation at junction temperatures up to 175 °C, it maintains stable VF (1.5–1.9 V at IF = 10 A) and IR (<200 µA at VR = 300 V, Tj = 150 °C) across full thermal range-critical for compact, thermally constrained designs like onboard chargers and industrial SMPS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 300 V - Maximum blocking voltage in reverse bias; enables use in 400 V DC-link PFC and boost converters. |
| IF (TC = 100 °C) | 10 A - Continuous forward current rating under real-world heatsink conditions; defines usable conduction capacity without derating. |
| Qc | 23 nC - Total capacitive charge at VR = 200 V, diF/dt = −200 A/µs, Tj = 150 °C; directly determines turn-off energy loss in hard-switched topologies. |
| RthJC | 2.3 K/W - Junction-to-case thermal resistance; enables accurate thermal design when mounted on standard TO-220 heatsinks. |
| VF (IF = 10 A, Tj = 150 °C) | 1.5–1.9 V - Forward voltage range under worst-case thermal stress; sets conduction loss floor in high-temp operation. |
| IR (VR = 300 V, Tj = 150 °C) | <1000 µA - Reverse leakage ceiling at max rated voltage and temperature; ensures minimal standby loss in high-voltage hold applications. |
| C (VR = 0 V) | 600 pF - Zero-bias junction capacitance; influences EMI generation and snubber sizing in resonant circuits. |
Pinout & Package
P-TO220-3 package: insulated case, 3-terminal through-hole mount with metal tab (cathode), Pin 1 (anode), Pin 2 (no connection), Pin 3 (cathode tab electrically connected to Pin 1 side).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Main current entry point; soldered to PCB trace carrying forward current into load or switch node. |
| Pin 2 | No Connection | Internally isolated; must remain unconnected to avoid mechanical stress or unintended coupling. |
| Pin 3 / Tab | Cathode | Primary heat path and electrical return; requires direct thermal interface to heatsink and low-inductance cathode routing. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr = 0) | Eliminates switching tail current and associated losses-reducing MOSFET/FET turn-on loss and EMI in bridge-leg configurations. |
| Temperature-stable switching | trr remains n.a. (not applicable) across −55 to +175 °C; avoids timing drift and loss increase in wide-temperature environments. |
| Low Qc (23 nC) | Reduces turn-off energy by >70% vs. comparable Si FRD; enables higher frequency operation without efficiency penalty. |
| High Tj rating (175 °C) | Supports compact thermal design with reduced heatsink mass; extends lifetime in sealed or convection-limited enclosures. |
| SiC material system | Enables 3× higher critical electric field than Si-achieving 300 V rating in smaller die area and lower capacitance. |
Applications
| Server PSU Boost Converter | Solar Inverter MPPT Stage |
|---|---|
Use Scenario: High-density 3.3 kW server power supply operating at 100 kHz with interleaved PFC. IC Role / Device Role / Timing Role: Output rectifier in continuous conduction mode (CCM) boost stage; handles 10 A average current with <100 ns switching transitions. Use Value: Zero Qrr prevents shoot-through risk during synchronous FET commutation and cuts boost-stage conduction + switching loss by 1.8 W vs. Si FRD. | Use Scenario: String-level MPPT converter in 1500 V DC solar farm inverters, operating at 50–70 kHz. IC Role / Device Role / Timing Role: Freewheeling diode in two-switch forward or active clamp flyback topology; blocks 300 V while conducting 10 A pulses. Use Value: Stable VF and IR over −25 to +85 °C ambient ensures consistent MPPT efficiency across seasonal temperature swings. |
| Onboard EV Charger | Industrial Motor Drive Braking Circuit |
Use Scenario: Bidirectional AC/DC OBC with dual active bridge (DAB); used in secondary-side rectification. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-frequency LLC resonant output stage; conducts 10 A RMS with 200 A/µs di/dt. Use Value: 23 nC Qc minimizes gate drive burden on synchronous controller and reduces body-diode conduction in asymmetrical DAB phase control. | Use Scenario: Regenerative braking snubber in 400 V industrial VFD with IGBT-based inverter stage. IC Role / Device Role / Timing Role: Clamping diode across DC bus capacitor; absorbs inductive kickback during rapid IGBT turn-off. Use Value: 36 A non-repetitive surge rating (IFSM) and 6.5 A²s i²t withstand enable reliable protection against 10 ms motor stall transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | 650 V VRRM, same 10 A IF, 25 nC Qc, TO-220-2 package (anode/cathode only) | Higher voltage margin for 600 V DC-link systems; lacks NC pin for layout flexibility | Select when 600 V blocking is required and pin 2 isolation is unnecessary. |
| SS10P3L (STMicroelectronics) | 300 V VRRM, 10 A IF, but Si-based; 45 nC Qc, 35 ns trr, VF ≈ 0.95 V @ 10 A | Lower conduction loss at room temp, but significant reverse recovery loss above 50 kHz | Select only for cost-sensitive, low-frequency (<30 kHz), low-temperature applications where SiC benefits are not needed. |
Compared with C3D10065A, SDP10S30 offers tighter voltage rating and NC pin utility for noise-sensitive layouts; versus SS10P3L, it delivers true zero-recovery operation essential for >50 kHz, high-efficiency designs-despite slightly higher VF.
Availability
SDP10S30 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, onboard EV chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and qualified SiC performance.
Supply support for SDP10S30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with leadership in SiC and GaN device development.
The SDP10S30 belongs to Infineon's thinQ!® SiC Schottky diode product line-engineered specifically for high-frequency, high-efficiency power conversion in renewable energy, EV, and industrial systems where zero-recovery behavior and thermal resilience are mandatory.
FAQ
Is SDP10S30 pin-compatible with standard TO-220 rectifiers?
Yes-SDP10S30 uses the P-TO220-3 outline with 2.54 mm lead pitch and standard TO-220 footprint. Pin 1 (anode) and Pin 3 (cathode tab) align with industry-standard anode/cathode placement; Pin 2 is internally unconnected and may be left floating or omitted in PCB layout.
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies IF = 10 A at TC = 100 °C. Derating begins above this point: at TC = 125 °C, IF drops to ~7.5 A; at TC = 140 °C, IF ≈ 5.5 A. Operation beyond TC = 150 °C is not recommended for sustained duty due to accelerated thermal resistance rise and IR increase.
Does SDP10S30 require a gate resistor or snubber network?
No-unlike SiC MOSFETs, this Schottky diode has no gate and exhibits no parasitic oscillation. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode-cathode is recommended in high-di/dt (>300 A/µs) hard-switched bridges to damp junction capacitance resonance and reduce EMI.
Can SDP10S30 replace SDT10S30 in the same PCB layout?
Yes-both share identical P-TO220-3 packaging and pinout. SDT10S30 is the non-insulated variant (tab electrically tied to cathode), while SDP10S30 features insulated tab. Mechanical fit is identical; electrical isolation must be verified per system safety requirements before substitution.
SDP10S30 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 300 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 300 V
- Capacitance @ Vr, F:
- 600pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
- Operating Temperature - Junction:
- -55°C ~ 175°C
SDP10S30 FAQ
1.How can I place an order for SDP10S30 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDP10S30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDP10S30 reliable?
The price and inventory of SDP10S30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDP10S30 is usually 5 days.
3.What payment methods are accepted for SDP10S30?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDP10S30 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDP10S30?
SDP10S30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDP10S30 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDP10S30?
For technical support, including SDP10S30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDP10S30 requirements.
6.How does Aetrix verify that SDP10S30 is sourced from the original manufacturer or authorized distributors?
All SDP10S30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDP10S30 meets industry standards.
7.What is the process for return or replacement of SDP10S30?
All SDP10S30 units undergo pre-shipment inspection (PSI). If there is an issue with SDP10S30, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDP10S30 part is unused and in its original packaging.
Return procedure for SDP10S30:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SDP10S30 Tags
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