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Infineon Technologies SDT05S60XK

Part No.:
SDT05S60XK
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixSDT05S60XK.pdf
Description:
DIODE SIL CARB 600V 5A TO220-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:700

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Product details

Overview

SDT05S60XK from Infineon Technologies is a 600 V, 5 A silicon carbide Schottky diode in PG-TO220-2-2 package, designed as a zero-recovery rectifier for high-frequency PFC and DC-DC stages. It delivers 1.7 V forward voltage at 5 A/150°C, 14 nC capacitive charge, and exhibits no reverse recovery or temperature-dependent switching behavior.

For engineers reviewing the SDT05S60XK datasheet, SDT05S60XK pinout, SDT05S60XK application, or SDT05S60XK equivalent, key selection criteria include its SiC-based zero-Qrr performance, thermal stability up to 175°C junction, and suitability for hard-switched 600 V industrial SMPS and solar inverters requiring low EMI and high efficiency.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC MOSFET body diodes in high-voltage, high-frequency power conversion. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery time (trr = n.a.) and stable Qc (14 nC) across temperature.

The device operates with fixed anode-cathode polarity and requires no gate drive or snubbing. Thermal resistance RthJC is 3.5 K/W, supporting 5 A continuous conduction at TC = 100°C with 43 W total power dissipation capability.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - Maximum blocking voltage in reverse bias; enables use in 400 V AC input PFC and 600 V bus DC-DC converters
IF (TC=100°C)5 A - Continuous forward current rating at case temperature of 100°C; defines usable output current in thermally constrained designs
VF @ 5A/150°C1.7–2.1 V - Forward voltage range under worst-case thermal condition; determines conduction loss and thermal design margin
Qc @ 400V/150°C14 nC - Total capacitive charge during turn-off; directly impacts switching loss in hard-switched topologies
RthJC3.5 K/W - Junction-to-case thermal resistance; enables direct heatsink mounting and simplifies thermal modeling
IR @ 600V/150°C≤1000 µA - Maximum leakage at full voltage and max junction temperature; ensures stable blocking in high-temp environments
C @ 1V/25°C170 pF - Junction capacitance at low reverse bias; influences high-frequency impedance and EMI filter sizing

Pinout & Package

Package: PG-TO220-2-2 - Insulated plastic TO-220 variant with two leads (anode and cathode), isolated mounting base, and standardized footprint for mechanical compatibility with legacy TO-220 heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain current entry point; connects to switching node (e.g., boost inductor or half-bridge leg)
Pin 2CathodeMain current exit point; connects to output rail or ground return path; electrically tied to metal tab

Key Features

FeatureDesign Value
No reverse recovery (Qrr = 0)Eliminates switching tail current and associated losses, enabling higher frequency operation without snubbers
Temperature-stable switchingQc and VF drift <±10% from 25°C to 150°C, removing derating uncertainty in thermal design
Low forward voltage hysteresisVF increases only ~0.4 V from 25°C to 150°C at 5 A, reducing conduction loss rise vs. Si diodes
High surge robustnessIFSM = 18.5 A (10 ms sine half-wave) supports inrush and fault-current handling in industrial systems

Applications

Industrial Solar InvertersServer PSU PFC Stages

Use Scenario: Boost-stage freewheeling diode in 600 V DC-link string inverters operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier with zero reverse recovery, replacing Si FRD to reduce switching loss and EMI.

Use Value: Enables 98.5%+ system efficiency at full load and reduces heatsink volume by 35% due to stable VF and low Qc.

Use Scenario: Output rectifier in active clamp forward or LLC resonant converters feeding 12 V server rails.

IC Role / Device Role / Timing Role: High-frequency synchronous rectification alternative where gate control complexity is undesirable.

Use Value: Delivers lower conduction loss than GaN FETs above 3 A and avoids shoot-through risk in asymmetrical layouts.

EV Onboard ChargersIndustrial Motor Drives

Use Scenario: AC/DC front-end PFC diode in bi-directional OBC modules rated for 6.6 kW and 11 kW.

IC Role / Device Role / Timing Role: Primary boost diode handling 5 A RMS at 100 kHz with >150°C junction cycling.

Use Value: Maintains consistent Qc and IR across wide ambient ranges (−40°C to +85°C), ensuring reliability over 10-year field life.

Use Scenario: Freewheeling diode across IGBTs in 3-phase inverter legs driving 7.5 kW induction motors.

IC Role / Device Role / Timing Role: Clamping and energy recirculation path during IGBT turn-off transitions.

Use Value: Prevents voltage overshoot spikes exceeding 600 V due to absence of reverse recovery, eliminating need for RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D05060E (Wolfspeed)Same 600 V/5 A rating; VF = 1.8 V @ 5 A/150°C; Qc = 15 nC; TO-220AC package (non-isolated tab)Requires insulated mounting hardware; slightly higher conduction lossPreferred when cost sensitivity outweighs thermal isolation needs
SS15P6 (ROHM)SiC Schottky, 600 V/5 A; VF = 1.6 V @ 5 A/25°C but degrades to 2.2 V @ 150°C; Qc = 16 nCHigher VF drift limits usable current at elevated temperaturesAcceptable for lower ambient or short-duty-cycle applications

Compared with C3D05060E and SS15P6, SDT05S60XK offers superior thermal stability of VF and lower Qc, making it optimal for continuous high-temperature operation in industrial and automotive-grade power supplies where thermal margin and EMI control are critical.

Availability

SDT05S60XK is available at Aetrix Electronics and suitable for industrial solar inverters, server PSUs, EV onboard chargers, and motor drives requiring stable component supply with long-term lifecycle support.

Supply support for SDT05S60XK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride power devices.

The SDT05S60XK belongs to Infineon's thinQ!® SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability 600 V power conversion in industrial and renewable energy systems.

FAQ

Is SDT05S60XK pin-compatible with standard silicon TO-220 fast recovery diodes?

Yes - SDT05S60XK uses the PG-TO220-2-2 package with identical mechanical footprint and lead spacing as legacy TO-220AC diodes. Pin 1 is anode and Pin 2 is cathode, matching industry-standard orientation. No PCB redesign is needed for drop-in replacement in existing layouts.

Does SDT05S60XK require a gate resistor or driver circuit?

No - as a Schottky diode, SDT05S60XK is a passive two-terminal device with no gate terminal. It conducts automatically when forward-biased and blocks when reverse-biased. No external drive, timing control, or protection circuitry beyond standard layout practices is required.

What is the maximum recommended case temperature for continuous 5 A operation?

The datasheet specifies IF = 5 A at TC = 100°C. Operation above this case temperature reduces allowable current linearly per the derating curve on Page 4. At TC = 110°C, maximum continuous current drops to ~4.5 A; sustained operation above TC = 125°C is not rated.

Can SDT05S60XK be used in parallel configurations?

Yes - its positive temperature coefficient of VF enables natural current sharing. Parallel operation requires matched layout symmetry, equal trace lengths, and shared thermal coupling. Derate total current by 10–15% versus sum of individual ratings to account for thermal and parasitic mismatches.

SDT05S60XK Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-2
Packaging:
Bulk
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 5 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
200 µA @ 600 V
Capacitance @ Vr, F:
170pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2
Operating Temperature - Junction:
-55°C ~ 175°C

SDT05S60XK FAQ

1.How can I place an order for SDT05S60XK through Aetrix?

Please submit a Request for Quotation (RFQ) for SDT05S60XK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDT05S60XK reliable?

The price and inventory of SDT05S60XK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT05S60XK is usually 5 days.

3.What payment methods are accepted for SDT05S60XK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT05S60XK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDT05S60XK?

SDT05S60XK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDT05S60XK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDT05S60XK?

For technical support, including SDT05S60XK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT05S60XK requirements.

6.How does Aetrix verify that SDT05S60XK is sourced from the original manufacturer or authorized distributors?

All SDT05S60XK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT05S60XK meets industry standards.

7.What is the process for return or replacement of SDT05S60XK?

All SDT05S60XK units undergo pre-shipment inspection (PSI). If there is an issue with SDT05S60XK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDT05S60XK part is unused and in its original packaging.

Return procedure for SDT05S60XK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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