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Infineon Technologies SDT10S30
- Part No.:
- SDT10S30
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
SDT10S30.pdf
- Description:
- DIODE SIL CARB 300V 10A TO220-2
- Quantity:
- Payment:
- Shipping:
Inventory:7,464
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Product details
Overview
SDT10S30 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 300 V repetitive peak reverse voltage, 10 A continuous forward current at TC = 100 °C, and 23 nC total capacitive charge at Tj = 150 °C. It features zero reverse recovery, temperature-stable switching, and no forward recovery-enabling high-efficiency PFC and DC-DC stages in industrial SMPS.
For engineers reviewing the SDT10S30 datasheet, SDT10S30 pinout, SDT10S30 application, or SDT10S30 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, low VF drift over temperature (1.5–1.9 V), 2.3 K/W junction-to-case thermal resistance, and PG-TO220-2-2 package with isolated cathode terminal.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-temperature power conversion. Its unipolar conduction eliminates minority-carrier storage, resulting in truly zero reverse recovery time and negligible di/dt-dependent losses.
Thermal performance is defined by a 2.3 K/W RthJC and operation up to 175 °C junction temperature. Capacitance drops from 600 pF at 0 V to 40 pF at 300 V, supporting hard-switched topologies with predictable snubbing requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 300 V - Maximum blocking voltage in repetitive reverse bias; sets usable bus voltage ceiling in 200–250 VAC PFC designs. |
| IF (TC=100°C) | 10 A - Continuous forward current derated for heatsink mounting at 100 °C; defines minimum heatsink sizing for steady-state conduction. |
| Qc | 23 nC - Total capacitive charge at VR=200 V, diF/dt=−200 A/µs, Tj=150 °C; directly impacts turn-off loss in synchronous rectifiers and totem-pole PFC. |
| VF (IF=10 A, Tj=150°C) | 1.5–1.9 V - Forward voltage range under full load and max operating temperature; determines conduction loss and thermal runaway margin. |
| RthJC | 2.3 K/W - Junction-to-case thermal resistance; enables direct calculation of ΔTj across heatsink interface for thermal design validation. |
| IR (VR=300 V, Tj=150°C) | ≤1000 µA - Max reverse leakage at rated voltage and max junction temperature; critical for standby loss and high-impedance hold-up circuits. |
| C (VR=300 V) | 40 pF - Junction capacitance at full blocking voltage; sets high-frequency displacement current and EMI filter loading in MHz-range converters. |
Pinout & Package
PG-TO220-2-2 package: isolated metal tab (cathode), two leads - Pin 1 (anode), Pin 2 (no connection), Pin 3 (cathode). Tab is electrically connected to cathode and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Main current entry point; connects to AC input or switch node; requires low-inductance layout for high-di/dt stability. |
| Pin 2 | No Connection | Internally unconnected; must remain floating-no PCB trace or pad should tie to this pin. |
| Pin 3 / Tab | Cathode | Current return path and primary thermal interface; must be mounted to heatsink with electrically insulating but thermally conductive interface material. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery (Qrr = 0) | Eliminates switching tail current and associated losses, enabling >500 kHz operation without snubber networks. |
| Temperature-stable VF | Forward voltage increases only ~0.4 V from 25 °C to 150 °C, reducing thermal runaway risk in parallel configurations. |
| Low C vs. VR slope | Capacitance drops 93% from 600 pF (0 V) to 40 pF (300 V), minimizing dv/dt-induced displacement current during turn-on. |
| High Tj rating | Rated for continuous operation up to +175 °C junction temperature, supporting compact, fanless industrial power supplies. |
| Isolated cathode tab | PG-TO220-2-2 package separates cathode electrical path from mechanical mounting surface, simplifying heatsink isolation in high-side configurations. |
Applications
| Industrial PFC Boost Stage | Server PSU LLC Rectification |
|---|---|
Use Scenario: 3.3 kW active front-end with interleaved boost topology operating at 100 kHz. IC Role / Device Role / Timing Role: Fast-recovery output diode in continuous conduction mode (CCM) boost stage. Use Value: Zero Qrr reduces turn-off loss by >95% versus Si FRD, cutting MOSFET stress and improving efficiency from 96.2% to 97.1% at full load. | Use Scenario: Secondary-side synchronous rectification in 1.5 MHz resonant LLC converter for AI accelerator racks. IC Role / Device Role / Timing Role: High-frequency freewheeling diode clamping resonant tank voltage during dead-time. Use Value: 40 pF capacitance at 300 V enables clean zero-voltage switching (ZVS) extension without added gate drive complexity. |
| Solar Microinverter DC Link | EV Onboard Charger (OBC) Phase Leg |
Use Scenario: 1.2 kW microinverter with dual-phase interleaved DC-DC stage feeding H-bridge inverter. IC Role / Device Role / Timing Role: Output diode in non-isolated buck-boost stage handling bidirectional energy flow. Use Value: Stable 1.5–1.9 V VF across −40 °C to +150 °C ensures consistent conduction loss in outdoor ambient cycling. | Use Scenario: 6.6 kW single-phase OBC with totem-pole PFC and phase-shifted full-bridge DC-DC. IC Role / Device Role / Timing Role: High-side clamp diode in totem-pole leg managing shoot-through immunity during transition. Use Value: Isolated cathode tab allows direct mounting to common heatsink while maintaining high-side potential integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | 650 V VRRM, same 10 A IF, higher VF (1.8–2.2 V @ 150 °C), TO-220-2 package with cathode tab. | Supports higher bus voltages (e.g., 400 VDC systems); less optimal for 300 V-class PFC due to excess voltage rating and higher conduction loss. | Select when system requires 650 V blocking margin or legacy TO-220-2 footprint compatibility. |
| SS10P3L (STMicroelectronics) | 300 V VRRM, 10 A IF, Si-based planar Schottky, VF = 0.85 V @ 25 °C but rises sharply to 1.35 V @ 150 °C, Qrr > 30 nC. | Lower cost but unsuitable for >100 kHz or >125 °C operation due to thermal instability and reverse recovery. | Select only for low-frequency, low-temperature (<100 °C) applications where SiC cost premium is unjustified. |
Compared with C3D10065A, SDT10S30 offers lower conduction loss at 300 V systems and tighter VF tolerance; versus SS10P3L, it delivers true zero-Qrr operation and stable high-temperature performance-critical for high-density, high-efficiency power stages.
Availability
SDT10S30 is available at Aetrix Electronics and suitable for industrial power supplies, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable SiC wafer lot control.
Supply support for SDT10S30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with leadership in SiC and GaN device development.
The thinQ!® SiC Schottky diode product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial, renewable energy, and e-mobility applications-designed specifically to replace silicon diodes in demanding switching environments.
FAQ
What is the maximum junction temperature rating for SDT10S30?
The SDT10S30 is rated for continuous operation up to +175 °C junction temperature, validated per JEDEC JESD22-A108. This enables use in fanless enclosures and high-ambient environments such as industrial motor drives and outdoor solar inverters without derating below 10 A at TC = 100 °C.
Does SDT10S30 require a gate resistor or snubber circuit?
No. As a unipolar Schottky diode with zero reverse recovery charge (Qrr = 0), SDT10S30 does not generate turn-off tail current or voltage overshoot. Snubbers are unnecessary in properly laid-out layouts; however, a small RC snubber may still be used for EMI suppression in ultra-high-di/dt applications (>500 A/µs).
How does the PG-TO220-2-2 package differ from standard TO-220AB?
The PG-TO220-2-2 has two leads plus an isolated metal tab (cathode), whereas TO-220AB has three leads with tab connected to lead 2. In SDT10S30, Pin 2 is NC, and the tab is cathode-only-enabling electrical isolation of the cathode from PCB ground while maintaining optimal thermal conduction to the heatsink.
Can SDT10S30 be paralleled with other SiC diodes for higher current?
Yes, but only with matched units from the same wafer lot and identical thermal mounting. The VF vs. temperature coefficient is positive and well-controlled (≈+0.8 mV/°C), enabling stable current sharing when thermal gradients are minimized. Layout symmetry and individual source inductance matching are mandatory for balanced dynamic sharing.
SDT10S30 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 300 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 300 V
- Capacitance @ Vr, F:
- 600pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
SDT10S30 FAQ
1.How can I place an order for SDT10S30 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDT10S30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDT10S30 reliable?
The price and inventory of SDT10S30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT10S30 is usually 5 days.
3.What payment methods are accepted for SDT10S30?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT10S30 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDT10S30?
SDT10S30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDT10S30 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDT10S30?
For technical support, including SDT10S30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT10S30 requirements.
6.How does Aetrix verify that SDT10S30 is sourced from the original manufacturer or authorized distributors?
All SDT10S30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT10S30 meets industry standards.
7.What is the process for return or replacement of SDT10S30?
All SDT10S30 units undergo pre-shipment inspection (PSI). If there is an issue with SDT10S30, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDT10S30 part is unused and in its original packaging.
Return procedure for SDT10S30:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SDT10S30 Tags
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