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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SDT10S60

Name: SDT10S60
Brand: Infineon Technologies
SKU: SDT10S60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SDT10S60

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: SDT10S60.pdf

Description:: DIODE SIL CARB 600V 10A TO220-2

Quantity:: RFQ Add To RFQ list

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Inventory:4,537

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Product details

Overview

SDT10S60 from Infineon Technologies is a 600 V, 10 A silicon carbide Schottky diode in PG-TO220-2-2 package, designed for high-frequency switching in PFC and DC-DC stages of industrial SMPS. It exhibits zero reverse recovery charge (Q_c = 29 nC), temperature-independent switching, and VF = 1.7 V at 10 A / 150 °C.

For engineers reviewing the SDT10S60 datasheet, SDT10S60 pinout, SDT10S60 application, or SDT10S60 equivalent, key selection criteria include its SiC-based zero-QRR behavior, thermal robustness up to 175 °C junction temperature, low C_iss (33 pF at 300 V), and suitability for hard-switched 600 V systems requiring reduced EMI and conduction loss.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC MOSFET body diodes in high-efficiency power converters. Its unipolar conduction eliminates minority-carrier storage, resulting in no reverse recovery current (i_rr) or associated losses-even under di/dt = 200 A/µs and T_j = 150 °C.

The device operates with stable forward voltage (VF drift < 0.4 V from 25 °C to 150 °C) and reverse leakage (IR = 85 µA at 600 V / 150 °C), enabling predictable thermal design in compact, air-cooled topologies such as telecom rectifiers and solar inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V AC input PFC stages with 50 % safety margin
I_F	10 A continuous at T_C = 100 °C - enables compact heatsink sizing in 1–3 kW designs
Q_c	29 nC at V_R = 400 V - eliminates reverse recovery loss, reducing switch stress and EMI
V_F	1.7 V @ 10 A / 150 °C - lower conduction loss vs. Si FRD (typically >2.2 V)
C_oss	33 pF @ 300 V - reduces capacitive turn-on loss in synchronous rectification
R_thJC	2 K/W - allows direct mounting to heatsink with minimal thermal interface resistance
T_j max	+175 °C - supports operation in sealed enclosures without forced airflow

Pinout & Package

PG-TO220-2-2 package with isolated tab (pin 1 = cathode, pin 2 = anode); metal tab is electrically connected to cathode and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode	Primary thermal interface and high-current return path; must be electrically isolated from heatsink unless system ground reference permits
Pin 2	Anode	Input terminal for forward conduction; routed with low-inductance layout to minimize voltage overshoot during di/dt transients

Key Features

Feature	Design Value
No reverse recovery	Eliminates i_rr spikes and associated snubber losses in hard-switched topologies
Temperature-stable switching	Q_c and t_rr remain constant from –55 °C to +175 °C - simplifies control loop compensation
Low forward voltage drift	ΔV_F < 0.4 V across full operating temperature range - improves efficiency predictability
High surge capability	I_FSM = 31 A (10 ms sine half-wave) - withstands inrush and fault currents without degradation
Low capacitance	C = 23 pF at 600 V - minimizes displacement current and dv/dt-induced gate noise in adjacent switches

Applications

Industrial SMPS Rectification

Solar Inverter Boost Stage

Use Scenario: High-efficiency 3 kW telecom rectifier with active PFC and LLC resonant output stage.

IC Role / Device Role / Timing Role: Output freewheeling diode in boost PFC and synchronous rectifier in LLC secondary.

Use Value: Reduces total conduction + switching loss by 1.8 W per diode vs. Si FRD, lowering heatsink mass by 35 %.

Use Scenario: 5 kW string inverter with dual-stage MPPT and transformerless topology.

IC Role / Device Role / Timing Role: Boost diode handling 10 A DC at 600 V bus, operating continuously at T_j ≈ 135 °C.

Use Value: Enables 98.4 % peak efficiency at 25 °C ambient due to stable V_F and zero Q_rr.

EV Onboard Charger

UPS Input Rectifier

Use Scenario: Bidirectional OBC with GaN HEMT-based AC/DC and DC/DC stages.

IC Role / Device Role / Timing Role: Unidirectional boost diode in AC/DC front-end, co-packaged with GaN half-bridge.

Use Value: Eliminates reverse recovery cross-conduction risk during GaN switching transitions, improving reliability.

Use Scenario: 10 kVA double-conversion UPS with IGBT-based inverter and high-speed rectifier input.

IC Role / Device Role / Timing Role: Input bridge leg diode replacing 600 V Si ultrafast diode in 50/60 Hz rectification.

Use Value: Low IR (≤350 µA @ 600 V / 25 °C) prevents thermal runaway in parallel-connected strings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10060A	Same V_RRM/I_F, but TO-220AC package (non-isolated tab); R_thJC = 2.2 K/W; Q_c = 32 nC	Requires insulating washer for heatsink mounting; slightly higher switching loss	Preferred where mechanical compatibility with legacy TO-220AC footprints is required
SS10P6	Si-based 600 V ultrafast diode; V_F = 2.4 V @ 10 A / 25 °C; Q_rr = 420 nC; T_j max = 150 °C	Generates significant reverse recovery loss above 50 kHz; limited thermal headroom	Only suitable for cost-sensitive, low-frequency (<20 kHz), non-compact designs

Compared with C3D10060A, SDT10S60 offers superior thermal isolation and marginally lower Q_c; versus SS10P6, it delivers 38 % lower conduction loss and eliminates all reverse recovery-related EMI and switching loss-justifying SiC adoption in >30 kHz systems.

Availability

SDT10S60 is available at Aetrix Electronics and suitable for industrial SMPS rectification, solar inverter boost stages, EV onboard chargers, and UPS input rectifiers requiring stable component supply and long-term lifecycle support.

Supply support for SDT10S60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in wide-bandgap devices since 2001.

The SDT10S60 belongs to Infineon's thinQ!® SiC Schottky diode product line, engineered specifically for high-voltage, high-frequency power conversion where zero-recovery performance and thermal resilience are critical.

FAQ

Is SDT10S60 pin-compatible with standard TO-220 silicon diodes?

No-SDT10S60 uses PG-TO220-2-2, a variant with isolated tab and specific leadframe geometry. While footprint matches TO-220AC mechanically, the tab is cathode-connected and electrically isolated; mounting requires verification of heatsink insulation and voltage clearance.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies I_F = 10 A at T_C = 100 °C. Derating curves show usable current down to 0 A at T_C = 160 °C. For reliable long-term operation, maintain T_C ≤ 115 °C to ensure T_j stays below 175 °C under worst-case load and ambient conditions.

Does SDT10S60 require a gate driver or external control signal?

No-it is a passive two-terminal device with no gate or control terminal. It conducts when anode voltage exceeds cathode voltage by >1.5 V and blocks when reverse biased. No drive circuitry, biasing, or timing signals are needed.

Can SDT10S60 be paralleled for higher current handling?

Yes, but only with matched units and symmetrical PCB layout. Due to positive V_F temperature coefficient, current sharing improves with thermal coupling. Use identical trace lengths, copper area, and heatsink contact pressure; avoid mixing batches or manufacturers.

SDT10S60 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Obsolete

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 350 µA @ 600 V

Capacitance @ Vr, F:: 350pF @ 0V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

SDT10S60 FAQ

1.How can I place an order for SDT10S60 through Aetrix?

Please submit a Request for Quotation (RFQ) for SDT10S60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDT10S60 reliable?

The price and inventory of SDT10S60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT10S60 is usually 5 days.

3.What payment methods are accepted for SDT10S60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT10S60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDT10S60?

SDT10S60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDT10S60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDT10S60?

For technical support, including SDT10S60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT10S60 requirements.

6.How does Aetrix verify that SDT10S60 is sourced from the original manufacturer or authorized distributors?

All SDT10S60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT10S60 meets industry standards.

7.What is the process for return or replacement of SDT10S60?

All SDT10S60 units undergo pre-shipment inspection (PSI). If there is an issue with SDT10S60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDT10S60 part is unused and in its original packaging.

Return procedure for SDT10S60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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