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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Power Distribution Switches, Load Drivers

Vishay Siliconix SI3865CDV-T1-E3

Name: SI3865CDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3865CDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3865CDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: Power Distribution Switches, Load Drivers

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3865CDV-T1-E3.pdf

Description:: IC PWR SWITCH P-CHAN 1:1 6TSOP

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Product details

Overview

SI3865CDV-T1-E3 from Vishay Siliconix is a dual-MOSFET load switch with integrated level-shift functionality, combining a P-Channel TrenchFET (R_DS(on) = 60 mΩ at V_IN = 4.5 V) and an N-Channel MOSFET in a single TSOP-6 package. It operates from 1.8 V to 12 V input, accepts 1.5 V to 8 V logic-level ON/OFF control, and delivers up to 2.8 A continuous load current - ideal for high-side power management in space-constrained portable devices.

For engineers reviewing the SI3865CDV-T1-E3 datasheet, SI3865CDV-T1-E3 pinout, SI3865CDV-T1-E3 application, or SI3865CDV-T1-E3 equivalent, key selection considerations include its adjustable slew-rate via external R2/C1, 3000 V HBM ESD protection on the ON/OFF terminal, and dual-channel architecture enabling compact, low-component-count load switching without external level-shifting circuitry.

Technical Context

The SI3865CDV-T1-E3 integrates two complementary MOSFETs: a low-R_DS(on) P-Channel device (Q1) configured as the main high-side load switch, and an N-Channel device (Q2) with internal ESD protection, used as a level-shifter to drive Q1's gate. Its operation requires only one external pull-up resistor (R1) and optional slew-rate components (R2/C1), eliminating discrete level-shifters.

Switching behavior is externally programmable: turn-on/turn-off delays (t_d(on), t_d(off)) and rise/fall times (t_r, t_f) scale predictably with R2 value (0–100 kΩ) and input voltage (1.8–4.5 V), enabling precise inrush current control across varying load capacitances (e.g., 1 µF to 10 µF).

Key Specifications

Parameter	Value and Actual Design Meaning
V_IN Range	1.8 V to 12 V - supports wide-input battery-powered systems including single-cell Li-ion (2.7–4.2 V) and multi-cell configurations.
R_DS(on) (P-Ch)	60 mΩ @ V_IN = 4.5 V, I_D = 1 A - limits conduction loss to ≤60 mV drop at 1 A, critical for efficiency in portable power rails.
I_L Continuous	2.8 A - enables direct switching of moderate-power subsystems (e.g., USB peripherals, display backlights, sensors).
V_ON/OFF Logic	1.5 V to 8 V - compatible with 1.8 V, 2.5 V, 3.3 V, and 5 V microcontroller GPIOs without level translation.
ESD Rating	3000 V HBM on ON/OFF pin - provides robust handling during board assembly and end-user interface exposure.
Slew Control	Externally adjustable via R2 (0–100 kΩ) and C1 (1000 pF) - allows tuning of dV/dt to prevent supply rail collapse or EMI during hot-plug events.

Pinout & Package

TSOP-6 package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, surface-mount, lead (Pb)-free, halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 - S2	P-Channel Source	Connects to system ground; forms return path for load current and intrinsic body diode conduction.
2,3 - D2 / S1	N-Channel Drain / P-Channel Source	Internal connection point between Q2 drain and Q1 source; not externally accessible - defines shared node in level-shift topology.
4 - D1	P-Channel Drain	Input voltage (V_IN) connection; supplies power to load when Q1 is on.
5 - G1	P-Channel Gate	Driven by Q2's source output; voltage level-shifted from ON/OFF signal to enable high-side switching.
6 - ON/OFF	N-Channel Gate Input	Logic-controlled enable terminal; 1.5 V–8 V compatible, with 3 kV HBM ESD protection.

Key Features

Feature	Design Value
Integrated Level-Shift Architecture	Eliminates need for external NPN/PNP or dedicated level-shifter IC, reducing BOM count and PCB area by ≥2 components.
TrenchFET® P-Channel Technology	Delivers 60 mΩ R_DS(on) at 4.5 V while maintaining stable performance down to 1.8 V input - ensures consistent efficiency across battery discharge.
Adjustable Slew-Rate Control	Enables precise tuning of turn-on/turn-off timing using only R2 (0–100 kΩ) and optional C1 (1000 pF), supporting diverse capacitive loads.
High ESD Robustness	3000 V HBM rating on ON/OFF pin meets IEC 61000-4-2 Level 3 requirements for handheld device interfaces.

Applications

Smartphone Power Rail Switching	Wearable Sensor Subsystem Enable
Use Scenario: Enabling/disabling camera module or RF front-end during sleep mode to reduce standby current. IC Role / Device Role / Timing Role: High-side load switch controlling V_CC to peripheral ICs; slew rate tuned to limit inrush into 10 µF decoupling caps. Use Value: Achieves <1 µA shutdown leakage and <100 µs controlled ramp, preventing brown-out of baseband processor during wake-up.	Use Scenario: Power-gating environmental sensors (e.g., accelerometer, barometer) in fitness trackers between measurement cycles. IC Role / Device Role / Timing Role: Low-voltage load switch (1.8 V input) driven directly by 1.8 V MCU GPIO, with no external level shifter required. Use Value: Reduces solution size by 2.5 mm² vs. discrete MOSFET + transistor level-shifter; maintains 1.9 A capability at 1.8 V input.
USB-C Port Power Delivery Sequencing	Industrial Handheld Display Backlight Control
Use Scenario: Managing V_BUS enable sequencing for USB-C sink ports with strict inrush limits per USB PD spec. IC Role / Device Role / Timing Role: Programmable slew-rate load switch ensuring dV/dt ≤ 1 V/ms into 100 µF port capacitance. Use Value: Meets USB PD 3.1 inrush current requirement (<100 mA over first 1 ms) using R2 = 47 kΩ, without custom ASIC.	Use Scenario: Controlling 5 V backlight LED string in ruggedized medical handhelds requiring hot-swap immunity. IC Role / Device Role / Timing Role: High-side switch with 12 V max V_IN tolerance and 2.8 A continuous rating, driven by isolated 3.3 V controller. Use Value: Withstands 12 V transients and delivers full brightness at 2.2 A, while R_DS(on) drift remains <15% from –40 °C to 85 °C.

Smartphone Power Rail Switching

Wearable Sensor Subsystem Enable

Use Scenario: Enabling/disabling camera module or RF front-end during sleep mode to reduce standby current.

IC Role / Device Role / Timing Role: High-side load switch controlling V_CC to peripheral ICs; slew rate tuned to limit inrush into 10 µF decoupling caps.

Use Value: Achieves <1 µA shutdown leakage and <100 µs controlled ramp, preventing brown-out of baseband processor during wake-up.

Use Scenario: Power-gating environmental sensors (e.g., accelerometer, barometer) in fitness trackers between measurement cycles.

IC Role / Device Role / Timing Role: Low-voltage load switch (1.8 V input) driven directly by 1.8 V MCU GPIO, with no external level shifter required.

Use Value: Reduces solution size by 2.5 mm² vs. discrete MOSFET + transistor level-shifter; maintains 1.9 A capability at 1.8 V input.

USB-C Port Power Delivery Sequencing

Industrial Handheld Display Backlight Control

Use Scenario: Managing V_BUS enable sequencing for USB-C sink ports with strict inrush limits per USB PD spec.

IC Role / Device Role / Timing Role: Programmable slew-rate load switch ensuring dV/dt ≤ 1 V/ms into 100 µF port capacitance.

Use Value: Meets USB PD 3.1 inrush current requirement (<100 mA over first 1 ms) using R2 = 47 kΩ, without custom ASIC.

Use Scenario: Controlling 5 V backlight LED string in ruggedized medical handhelds requiring hot-swap immunity.

IC Role / Device Role / Timing Role: High-side switch with 12 V max V_IN tolerance and 2.8 A continuous rating, driven by isolated 3.3 V controller.

Use Value: Withstands 12 V transients and delivers full brightness at 2.2 A, while R_DS(on) drift remains <15% from –40 °C to 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar load-switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPS22965DSGR	Single-channel, 5.5 V max V_IN, fixed 1.5 ms slew, no level-shift - requires external logic for >3.3 V systems.	Limited to low-voltage domains; lacks dual-MOSFET architecture for self-contained level shifting.	Choose when only 1.2–5.5 V operation is needed and board space permits separate level-shifter.
AP22652WU-7	Single-channel, 5.5 V max V_IN, 45 mΩ R_DS(on), integrated slew control - no N-ch driver for P-ch gate.	No internal level-shift; requires 3.3 V or 5 V logic drive, incompatible with 1.8 V MCUs without buffer.	Select for higher efficiency at 5 V but accept added complexity for sub-3 V control signals.

Compared with TPS22965DSGR and AP22652WU-7, the SI3865CDV-T1-E3 uniquely combines wide-input voltage (1.8–12 V), true 1.5 V logic compatibility, and integrated level-shift in TSOP-6 - enabling single-component, zero-external-transistor load switching where voltage domain bridging is essential.

Availability

SI3865CDV-T1-E3 is available at Aetrix Electronics and suitable for smartphone power rail switching, wearable sensor subsystem enable, and industrial handheld display backlight control requiring stable component supply, long-term lifecycle support, and Pb-free/halogen-free compliance.

Supply support for SI3865CDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, reliability, and miniaturization.

The Si3865CDV product line targets space-constrained portable electronics requiring integrated, low-component-count load switching - specifically engineered to replace discrete P-MOS + N-MOS + resistor solutions with a single TSOP-6 device.

FAQ

What is the maximum continuous load current supported by SI3865CDV-T1-E3?

The SI3865CDV-T1-E3 supports 2.8 A continuous load current at T_A = 25 °C with proper PCB copper area (≥1 in², 2 oz Cu). Derating applies above 25 °C ambient: at 85 °C, max continuous current drops to ~1.9 A due to thermal resistance (R_thJA = 130 °C/W). The SI3865CDV-T1-E3 must be used with adequate heatsinking in high-power or high-ambient applications.

Can SI3865CDV-T1-E3 operate with a 1.8 V microcontroller GPIO driving the ON/OFF pin?

Yes, the SI3865CDV-T1-E3 accepts logic-level inputs from 1.5 V to 8 V, making it fully compatible with 1.8 V GPIOs without level-shifting circuitry. At V_ON/OFF = 1.8 V, the N-Channel MOSFET turns on sufficiently to drive the P-Channel gate, enabling full 2.8 A load current at V_IN = 1.8 V. This capability is verified in the datasheet's "ON Characteristics" table under V_ON/OFF = 1.5 V test conditions.

How is slew rate adjusted on SI3865CDV-T1-E3, and what components are required?

Slew rate on the SI3865CDV-T1-E3 is adjusted using external resistor R2 (0–100 kΩ) between pins 2/3 and 6, and optionally capacitor C1 (1000 pF) from pin 6 to ground. R2 sets turn-on/turn-off timing: e.g., R2 = 22 kΩ yields ~15 µs t_r at V_IN = 2.5 V. No additional active components are needed - the SI3865CDV-T1-E3's internal N-MOSFET and gate drive topology enable this fully passive control.

Does SI3865CDV-T1-E3 include reverse-current blocking capability?

Yes, the SI3865CDV-T1-E3 provides reverse-current blocking via its integrated P-Channel MOSFET's body diode orientation. When the load voltage exceeds V_IN (e.g., during hot-swap or backup battery scenarios), the P-Channel remains off and blocks reverse conduction. Reverse leakage is limited to 1 µA at V_IN = 12 V and V_ON/OFF = 0 V, as specified in the "OFF Characteristics" section of the SI3865CDV-T1-E3 datasheet.

What is the package type and footprint compatibility of SI3865CDV-T1-E3?

The SI3865CDV-T1-E3 uses the standard 6-lead TSOP package (JEDEC MO-193C), measuring 3.05 mm × 2.85 mm × 1.0 mm. Its pinout matches industry-standard TSOP-6 layouts, and Vishay provides recommended land patterns (Document 72610) for solder mask-defined pads. The SI3865CDV-T1-E3 is pin-compatible with other TSOP-6 dual-MOSFET load switches sharing identical pin 1–6 assignments (e.g., source-drain-gate-source-gate-drain topology).

SI3865CDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Series:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Switch Type:: General Purpose

Number of Outputs:: 1

Ratio - Input:Output:: 1:1

Output Configuration:: High Side

Output Type:: P-Channel

Interface:: On/Off

Voltage - Load:: 1.8V ~ 12V

Voltage - Supply (Vcc/Vdd):: -

Current - Output (Max):: 2.8A

Rds On (Typ):: 50mOhm

Input Type:: -

Features:: Slew Rate Controlled

Fault Protection:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3865CDV-T1-E3 FAQ

1.How can I place an order for SI3865CDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3865CDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3865CDV-T1-E3 reliable?

The price and inventory of SI3865CDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3865CDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3865CDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3865CDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3865CDV-T1-E3?

SI3865CDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3865CDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3865CDV-T1-E3?

For technical support, including SI3865CDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3865CDV-T1-E3 requirements.

6.How does Aetrix verify that SI3865CDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3865CDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3865CDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3865CDV-T1-E3?

All SI3865CDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3865CDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3865CDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3865CDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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