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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Power Distribution Switches, Load Drivers

Vishay Siliconix SI3865CDV-T1-GE3

Name: SI3865CDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3865CDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3865CDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: Power Distribution Switches, Load Drivers

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3865CDV-T1-GE3.pdf

Description:: IC PWR SWITCH P-CHAN 1:1 6TSOP

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Product details

Overview

SI3865CDV-T1-GE3 from Vishay Siliconix is a dual-MOSFET load switch with integrated level-shift functionality, combining a P-Channel TrenchFET (R_DS(on) = 60 mΩ at V_IN = 4.5 V) and an N-Channel MOSFET in a single TSOP-6 package. It operates from 1.8 V to 12 V input, accepts 1.5 V to 8 V logic-level ON/OFF control, and delivers up to 2.8 A continuous load current - ideal for high-side power management in space-constrained portable electronics.

For engineers reviewing the SI3865CDV-T1-GE3 datasheet, SI3865CDV-T1-GE3 pinout, SI3865CDV-T1-GE3 application, or SI3865CDV-T1-GE3 equivalent, key selection considerations include its adjustable slew-rate via external R2/C1, 3000 V HBM ESD protection on the ON/OFF terminal, and dual-MOSFET architecture enabling logic-compatible high-side switching without discrete level-shifting components.

Technical Context

The SI3865CDV-T1-GE3 implements a tightly coupled P+N MOSFET topology where the N-Channel device drives the gate of the P-Channel load switch via internal connection - eliminating need for external gate pull-up or level-shifter ICs. Its ON/OFF terminal directly interfaces 1.5 V logic while maintaining full control over the 12 V-capable P-Channel output stage.

Switching behavior is externally programmable: rise/fall times (t_r, t_f) are set by resistor R2 (0–100 kΩ) and optional capacitor C1 (1000 pF), enabling optimization for inrush current limiting across diverse capacitive loads. Thermal performance is characterized by R_thJA = 130 °C/W (typ) and R_thJF = 75 °C/W (typ) to Q2's foot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_IN Range	1.8 V to 12 V - supports wide-input battery and rail systems including Li-ion, USB PD, and industrial 5/12 V supplies.
R_DS(on) (P-Ch)	60 mΩ at V_IN = 4.5 V - limits voltage drop to ≤84 mV at 1.4 A, reducing power loss and thermal stress.
I_L Continuous	2.8 A - sufficient for powering displays, SSD modules, or peripheral rails in handheld devices.
Logic Input Range	1.5 V to 8 V - compatible with 1.8 V, 3.3 V, and 5 V microcontrollers without level translation.
ESD Rating	3000 V HBM - protects ON/OFF control line against handling and system-level electrostatic discharge events.
Slew-Rate Control	Externally adjustable via R2 (0–100 kΩ) and C1 (1000 pF) - enables precise inrush current management for sensitive downstream circuitry.
Package	TSOP-6 (JEDEC MO-193C) - 3.05 mm × 2.85 mm footprint with 0.95 mm lead pitch, optimized for high-density PCB layouts.

Pinout & Package

TSOP-6 package (JEDEC MO-193C), surface-mount, low-profile (1.10 mm max height), with exposed drain pad for thermal enhancement. Pin 1 marked by notch or dot; top view orientation per datasheet Figure 1.

Pin/Terminal	Circuit Role	Design Meaning
1	P-Channel Source	Connected to VIN - serves as high-side switch source node; ties to input supply rail.
2, 3	N-Channel Drain / P-Channel Gate	Internal connection point - N-FET drain drives P-FET gate; requires external R1 pull-up for proper turn-on biasing.
4	P-Channel Drain	Switched output (VOUT) - connects to load; carries full load current up to 2.8 A.
5	N-Channel Source	Ground reference for N-FET - must be connected to system GND for level-shift operation.
6	ON/OFF Control	Logic input terminal - 1.5–8 V compatible; internally ESD-protected (3 kV HBM); controls N-FET gate.

Key Features

Feature	Design Value
Dual-MOSFET Integration	Single TSOP-6 package replaces discrete P-FET + N-FET + resistor network - reduces BOM count and layout area by ≥40%.
Adjustable Slew-Rate	External R2/C1 sets t_r/t_f from <1 µs to >900 µs - prevents voltage droop and supply rail collapse during hot-plug events.
Low-Voltage Logic Compatibility	1.5 V minimum ON/OFF threshold - enables direct interface with ultra-low-power MCUs (e.g., ARM Cortex-M0+, MSP430) without auxiliary buffers.
TrenchFET® Technology	60 mΩ R_DS(on) at 4.5 V - achieves lower conduction loss than comparable SO-8 or SOT-23 dual-FET solutions at same current rating.
Halogen-Free & RoHS	Compliant to IEC 61249-2-21 and Directive 2002/95/EC - meets environmental requirements for consumer and medical portable devices.

Applications

Smartphone Power Rail Switching	USB-C Peripheral Power Management
Use Scenario: Enabling/disabling camera module or display backlight in smartphones during sleep/wake transitions. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail; slew-rate tuned to limit inrush into 100 µF bulk capacitance. Use Value: Prevents brown-out of main PMIC during rapid load activation; eliminates need for separate level-shifter IC and saves 2.5 mm² PCB area.	Use Scenario: Controlling power delivery to USB-C accessories (e.g., dongles, docks) based on enumeration status. IC Role / Device Role / Timing Role: Logic-controlled high-side switch between USB PD source and accessory VBUS path; ON/OFF driven by USB controller GPIO. Use Value: Supports 1.8 V GPIO control from USB PD controller; 3 kV ESD protection safeguards against cable-insertion transients.
Wearable Sensor Hub Power Gating	Industrial Handheld Meter Load Isolation
Use Scenario: Isolating inertial measurement unit (IMU) or bio-sensor subsystems when inactive to extend battery life. IC Role / Device Role / Timing Role: Low-quiescent-load switch with 1 µA OFF-state leakage - maintains system sleep current below 5 µA. Use Value: Enables sub-10 µA deep-sleep mode; R_DS(on) stability over -40°C to 85°C ensures consistent sensor biasing across temperature.	Use Scenario: Disconnecting non-critical loads (e.g., LCD backlight, SD card slot) during low-power metering cycles. IC Role / Device Role / Timing Role: 12 V-rated high-side switch operating from 9–12 V battery; handles 2.2 A peak current during backlight turn-on. Use Value: 12 V V_DS rating avoids derating in 12 V nominal systems; TSOP-6 thermal resistance (R_thJA = 130 °C/W) sustains 2.2 A at 65°C ambient without heatsink.

Smartphone Power Rail Switching

USB-C Peripheral Power Management

Use Scenario: Enabling/disabling camera module or display backlight in smartphones during sleep/wake transitions.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail; slew-rate tuned to limit inrush into 100 µF bulk capacitance.

Use Value: Prevents brown-out of main PMIC during rapid load activation; eliminates need for separate level-shifter IC and saves 2.5 mm² PCB area.

Use Scenario: Controlling power delivery to USB-C accessories (e.g., dongles, docks) based on enumeration status.

IC Role / Device Role / Timing Role: Logic-controlled high-side switch between USB PD source and accessory VBUS path; ON/OFF driven by USB controller GPIO.

Use Value: Supports 1.8 V GPIO control from USB PD controller; 3 kV ESD protection safeguards against cable-insertion transients.

Wearable Sensor Hub Power Gating

Industrial Handheld Meter Load Isolation

Use Scenario: Isolating inertial measurement unit (IMU) or bio-sensor subsystems when inactive to extend battery life.

IC Role / Device Role / Timing Role: Low-quiescent-load switch with 1 µA OFF-state leakage - maintains system sleep current below 5 µA.

Use Value: Enables sub-10 µA deep-sleep mode; R_DS(on) stability over -40°C to 85°C ensures consistent sensor biasing across temperature.

Use Scenario: Disconnecting non-critical loads (e.g., LCD backlight, SD card slot) during low-power metering cycles.

IC Role / Device Role / Timing Role: 12 V-rated high-side switch operating from 9–12 V battery; handles 2.2 A peak current during backlight turn-on.

Use Value: 12 V V_DS rating avoids derating in 12 V nominal systems; TSOP-6 thermal resistance (R_thJA = 130 °C/W) sustains 2.2 A at 65°C ambient without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar load-switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPS22922DCKR	Single-channel, 5.5 V max V_IN, fixed 1.2 ms slew-rate, no external adjustment.	Limited to ≤5.5 V systems; lacks programmable timing and 12 V capability.	Choose for cost-sensitive 3.3 V-only designs where fixed slew is acceptable.
AP2171WG-7	Single P-FET, 5.5 V max, 70 mΩ R_DS(on), no integrated level-shift - requires external 1.8 V logic buffer.	Higher BOM count and layout complexity; unsuitable for 1.5 V logic sources.	Prefer only if existing design uses discrete level-shifting and cannot accommodate dual-FET integration.

Compared with TPS22922DCKR and AP2171WG-7, the SI3865CDV-T1-GE3 uniquely combines 12 V input support, 1.5 V logic compatibility, and fully adjustable slew-rate in one TSOP-6 package - delivering superior flexibility for multi-rail portable systems without compromising board space or thermal margin.

Availability

SI3865CDV-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power rail switching, USB-C peripheral power management, and wearable sensor hub power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for SI3865CDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si3865CDV belongs to Vishay's TrenchFET® load switch family, engineered specifically for compact, high-efficiency power sequencing in battery-powered portable electronics where logic-level compatibility and thermal performance are critical.

FAQ

What is the maximum input voltage rating for the SI3865CDV-T1-GE3?

The SI3865CDV-T1-GE3 has an absolute maximum input voltage (V_IN = V_DS2) rating of 12 V, as specified in the Absolute Maximum Ratings table. Operation beyond this voltage risks permanent damage. The device is characterized for reliable operation across 1.8 V to 12 V, making it suitable for both single-cell Li-ion and multi-cell battery systems. SI3865CDV-T1-GE3 must not be used in 15 V or higher supply rails without external clamping.

Does the SI3865CDV-T1-GE3 require an external pull-up resistor on the ON/OFF pin?

No - the ON/OFF pin (Pin 6) is a logic input that does not require a pull-up resistor. However, the internal N-Channel MOSFET's gate (connected to Pins 2 and 3) requires an external pull-up resistor R1 (typically 10 kΩ to 1 MΩ) to ensure proper turn-on of the P-Channel switch. SI3865CDV-T1-GE3 datasheet Figure 1 explicitly shows R1 tied between VIN and Pins 2/3; omission causes failure to enable.

Can the SI3865CDV-T1-GE3 drive a 2.5 A load continuously at 85°C ambient?

Yes - at T_A = 85°C, with standard FR4 PCB (1 in² copper, 2 oz), the SI3865CDV-T1-GE3 can sustain 2.5 A continuously. Using R_DS(on) = 0.095 Ω (at V_IN = 2.5 V, worst-case for thermal calculation) yields P_LOSS = 0.59 W. With R_thJA = 150 °C/W (max), junction rise is 88.5°C, resulting in T_J = 173.5°C - exceeding 150°C rating. Derating to 2.2 A ensures T_J ≤ 150°C. SI3865CDV-T1-GE3 thermal design must include adequate copper pour under Pin 4 (drain) for safe 2.5 A operation.

Is the SI3865CDV-T1-GE3 pin-compatible with earlier Si3865CDV variants like -T1-E3?

Yes - SI3865CDV-T1-GE3 shares identical TSOP-6 pinout, electrical characteristics, and mechanical dimensions with Si3865CDV-T1-E3. The "-GE3" suffix denotes halogen-free construction (per IEC 61249-2-21), while "-E3" is lead-free only. No PCB layout changes are required when upgrading from -T1-E3 to SI3865CDV-T1-GE3; both are drop-in replacements per Vishay's ordering information table.

How does the slew-rate adjustment work on the SI3865CDV-T1-GE3?

Slew-rate is controlled by external resistor R2 (between Pins 2/3 and GND) and optional capacitor C1 (between Pins 2/3 and GND). Increasing R2 lengthens turn-on/off times: at V_IN = 2.5 V and R1 = 20 kΩ, t_r rises from ~9 µs (R2 = 0 kΩ) to ~45 µs (R2 = 10 kΩ). C1 adds further delay - e.g., 1000 pF with R2 = 10 kΩ extends t_r to >100 µs. SI3865CDV-T1-GE3 application curves (Figure 4) provide exact timing vs. R2 values for each V_IN.

SI3865CDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Series:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Switch Type:: General Purpose

Number of Outputs:: 1

Ratio - Input:Output:: 1:1

Output Configuration:: High Side

Output Type:: P-Channel

Interface:: On/Off

Voltage - Load:: 1.8V ~ 12V

Voltage - Supply (Vcc/Vdd):: -

Current - Output (Max):: 2.8A

Rds On (Typ):: 50mOhm

Input Type:: -

Features:: Slew Rate Controlled

Fault Protection:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3865CDV-T1-GE3 FAQ

1.How can I place an order for SI3865CDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3865CDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3865CDV-T1-GE3 reliable?

The price and inventory of SI3865CDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3865CDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3865CDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3865CDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3865CDV-T1-GE3?

SI3865CDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3865CDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3865CDV-T1-GE3?

For technical support, including SI3865CDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3865CDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3865CDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3865CDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3865CDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3865CDV-T1-GE3?

All SI3865CDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3865CDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3865CDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3865CDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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