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Infineon Technologies SIDC01D120H6
- Part No.:
- SIDC01D120H6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC01D120H6.pdf
- Description:
- DIODE GP 1.2KV 600MA WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:5,456
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Product details
Overview
SIDC01D120H6 from Infineon Technologies is a 1200 V, 0.6 A fast-switching silicon power diode chip fabricated using EMCON technology with 120 µm thickness, soft reverse recovery (S2 = 1 at Tj = 125 °C), low Qrr (0.9 µC at Tj = 125 °C), and 1.6 V forward voltage at 0.6 A - deployed in resonant SMPS and industrial motor drives.
For engineers reviewing the SIDC01D120H6 datasheet, SIDC01D120H6 pinout, SIDC01D120H6 application, or SIDC01D120H6 equivalent, key selection criteria include reverse recovery charge (Qrr), softness factor (S2), junction temperature range (–55 to +150 °C), VR = 1200 V rating, and die bonding compatibility with conductive epoxy or solder.
Technical Context
This discrete silicon diode chip operates as a unipolar, planar-junction fast recovery rectifier optimized for high-voltage switching converters. Its EMCON process delivers controlled carrier lifetime for soft turn-off behavior, minimizing voltage overshoot and EMI in hard-switched and resonant topologies.
Designed for integration into discrete packages or EUPEC power modules, it features photoimide passivation, AlSiCu anode metallization (3200 nm), Ni/Ag cathode system, and is qualified for die bonding via electrically conductive glue or solder - with wire bond capability using ≤250 µm Al wire.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Repetitive Peak Reverse Voltage) | 1200 V - supports DC-link voltages up to 800 V bus systems with 50 % safety margin. |
| IF (Continuous Forward Current) | 0.6 A at Tjmax - defines thermal-limited conduction capacity in compact die form factor. |
| VF (Forward Voltage) | 1.6 V at IF = 0.6 A, Tj = 25 °C - determines conduction loss in high-frequency switching stages. |
| Qrr (Reverse Recovery Charge) | 0.9 µC at IF = 0.6 A, di/dt = 600 A/µs, VR = 600 V, Tj = 125 °C - directly impacts switching loss and snubber design in hard-switched converters. |
| t rr2 (Reverse Recovery Time) | Not specified in datasheet - dynamic performance characterized via Qrr and softness instead of discrete trr. |
| S2 (Softness Factor) | 1 at Tj = 125 °C - indicates fully soft recovery with no current tail, reducing voltage spikes and RFI generation. |
| Tj Operating Range | –55 to +150 °C - enables operation in automotive under-hood and industrial drive environments without derating. |
Pinout & Package
Package: Bare die (1.2 × 1.1 mm² active area, 120 µm thickness) on foil carrier; no leadframe or molded package - intended for hybrid assembly into discrete housings or module substrates.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad (0.48 × 0.38 mm²) | High-side P-region connection | AlSiCu metallized surface for conductive epoxy or solder die attach; defines current entry point in forward conduction. |
| Cathode pad (entire backside) | N-region collector contact | Ni/Ag metallized rear surface - requires full-area solder or conductive adhesive bond for thermal and electrical path integrity. |
Key Features
| Feature | Design Value |
|---|---|
| EMCON 120 µm chip technology | Enables precise carrier lifetime control for reproducible soft recovery and stable Qrr across temperature. |
| Soft recovery (S2 = 1) | Eliminates reverse recovery current tail, reducing dv/dt-induced gate ringing in adjacent MOSFETs/IGBTs. |
| Low Qrr (0.9 µC @ 125 °C) | Lowers switching losses by >30 % vs. standard FRDs in 100–500 kHz resonant LLC converters. |
| Photoimide frontside passivation | Provides mechanical protection and humidity resistance during die handling and module encapsulation. |
| Ni/Ag cathode system | Ensures reliable bondability with both soft solder and epoxy adhesives in high-reliability power modules. |
Applications
| Resonant LLC Converters | Industrial AC Drives |
|---|---|
Use Scenario: High-efficiency 300–500 kHz DC-DC stage in server PSU with zero-voltage switching. IC Role / Device Role / Timing Role: Secondary-side freewheeling diode in synchronous rectification topology. Use Value: Low Qrr and soft recovery minimize body-diode conduction loss and EMI in ZVS transitions. | Use Scenario: Brake chopper circuit in 3-phase VFD controlling 7.5 kW induction motor. IC Role / Device Role / Timing Role: Fast recovery snubber diode clamping regenerative energy during deceleration. Use Value: 1200 V VR rating withstands 900 V DC-link transients; S2 = 1 prevents voltage overshoot on IGBT collector. |
| High-Voltage SMPS | Power Module Integration |
Use Scenario: Primary-side clamp diode in 1 kW telecom rectifier with 400 V input. IC Role / Device Role / Timing Role: RCD snubber diode absorbing leakage inductance energy during MOSFET turn-off. Use Value: 1.6 V VF ensures low conduction loss during brief clamp pulses; 150 °C Tj rating sustains peak power cycling. | Use Scenario: Integrated into EUPEC 62 mm half-bridge IGBT module for solar string inverters. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode paired with 1200 V IGBT switch. Use Value: Matched thermal expansion and metallization enable robust long-term bond reliability under 10⁵ thermal cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery diode chip applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-12N1 | Module-integrated 1200 V / 100 A diode; packaged, not bare die; higher Qrr (2.5 µC) | Targeted for bolt-down module replacement, not die-level integration | Select when full-module drop-in is required over custom die attach. |
| STMicroelectronics STTH1R06 | Bare die variant unavailable; TO-220 packaged; lower VR (600 V); VF = 1.7 V @ 1 A | Limited to <400 V DC-link applications; unsuitable for 1200 V systems | Choose only for cost-sensitive 600 V designs where die-level assembly is unnecessary. |
Compared with SIDC01D120H6, MDD100-12N1 offers plug-and-play modularity but sacrifices Qrr optimization and thermal design flexibility, while STTH1R06 lacks voltage rating and die-form factor needed for high-density 1200 V power modules.
Availability
SIDC01D120H6 is available at Aetrix Electronics and suitable for resonant LLC converters, industrial AC drives, and high-voltage SMPS requiring stable component supply and traceable bare-die sourcing.
Supply support for SIDC01D120H6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.
SIDC01D120H6 belongs to Infineon's high-voltage discrete diode chip portfolio, engineered for integration into power modules and compact converters demanding soft switching, low Qrr, and extended temperature operation.
FAQ
Is SIDC01D120H6 supplied in tape-and-reel or waffle pack?
No - SIDC01D120H6 is delivered as bare die on foil carrier (Q67050-A4171-A001), not in tape-and-reel or waffle pack. It requires die-bonding equipment and cleanroom handling per Infineon's recommended storage conditions (dry nitrogen, <6 months at 23 °C).
What wire bonding material and diameter is qualified for this die?
Aluminum wire ≤250 µm diameter is qualified for anode-side wire bonding. The cathode side is metallized with Ni/Ag and is not intended for wire bonding - it must be fully bonded to substrate via solder or conductive epoxy.
Does SIDC01D120H6 have a specified maximum junction-to-case thermal resistance?
No - as a bare die, RθJC is not defined. Thermal performance depends entirely on die attach quality, substrate material (e.g., DBC ceramic), and heatsink interface. Infineon specifies die thickness (120 µm) and recommends conductive bonding for optimal thermal path.
Can SIDC01D120H6 replace standard FRD chips in existing EUPEC modules?
Yes - it is the designated die used in multiple EUPEC discrete and module products. Its footprint (1.2 × 1.1 mm²), metallization stack, and soft recovery profile match EUPEC's internal qualification requirements for 1200 V module integration.
SIDC01D120H6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 600mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 600 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -55°C ~ 150°C
SIDC01D120H6 FAQ
1.How can I place an order for SIDC01D120H6 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC01D120H6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC01D120H6 reliable?
The price and inventory of SIDC01D120H6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC01D120H6 is usually 5 days.
3.What payment methods are accepted for SIDC01D120H6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC01D120H6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC01D120H6?
SIDC01D120H6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC01D120H6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC01D120H6?
For technical support, including SIDC01D120H6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC01D120H6 requirements.
6.How does Aetrix verify that SIDC01D120H6 is sourced from the original manufacturer or authorized distributors?
All SIDC01D120H6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC01D120H6 meets industry standards.
7.What is the process for return or replacement of SIDC01D120H6?
All SIDC01D120H6 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC01D120H6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC01D120H6 part is unused and in its original packaging.
Return procedure for SIDC01D120H6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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