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Infineon Technologies SIDC03D120H6X1SA3

Part No.:
SIDC03D120H6X1SA3
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
Die
Datasheet:
AetrixSIDC03D120H6X1SA3.pdf
Description:
DIODE GP 1.2KV 3A WAFER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,798

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Product details

Overview

SIDC03D120H6X1SA3 from Infineon Technologies is a 1200 V, 3 A fast-switching silicon diode chip in EMCON technology, fabricated on 150 mm wafers with 120 µm thickness and active die area of 1.32 mm². It delivers soft reverse recovery (S2 = 1), low Qrr (1.3 µC at Tj = 125 °C), and VF = 1.6 V at 3 A, targeting high-frequency resonant converters and industrial motor drives.

For engineers reviewing the SIDC03D120H6X1SA3 datasheet, SIDC03D120H6X1SA3 pinout, SIDC03D120H6X1SA3 application, or SIDC03D120H6X1SA3 equivalent, key selection criteria include reverse recovery charge, softness factor, temperature coefficient of VF, and compatibility with epoxy or soft-solder die bonding in power module assembly.

Technical Context

This discrete diode chip employs Infineon's EMCON process for optimized carrier lifetime control, enabling fast yet soft switching behavior without snubbers. Its 120 µm thin die and photoimide passivation support high thermal cycling reliability in press-pack and solder-bonded module configurations.

Dynamic performance is characterized at two junction temperatures (25 °C and 125 °C) under standardized di/dt (600 A/µs) and VR (600 V) conditions, with tbd values for trr1 and dirr1/dt indicating design-stage validation status per preliminary specification.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1200 V - Maximum repetitive peak reverse voltage; defines blocking capability in bridge-leg or freewheeling positions.
IF(AV)3 A - Average forward current at Tjmax; sets continuous conduction limit in SMPS output rectification.
VF @ 3A, 25°C1.6 V - Forward voltage drop; directly impacts conduction loss and thermal design in high-duty-cycle operation.
Qrr @ 125°C1.3 µC - Reverse recovery charge; determines turn-off switching loss and EMI generation in hard- and resonant-switching topologies.
Softness S21 - Ratio of peak to average reverse recovery current; value of 1 indicates ideal soft recovery, minimizing voltage overshoot and oscillation.
Die size1.75 × 1.85 mm² - Physical footprint; enables high-density integration into EUPEC power modules and discrete hybrid packages.
Tj range–55 to +150 °C - Operating junction temperature span; supports industrial and traction-grade thermal cycling requirements.

Pinout & Package

Package: Bare die (unmounted silicon chip) in EMCON technology, supplied on foil with sawn edges. No leadframe or molded package - intended for die-attach into power modules or discrete assemblies.

Pin/TerminalCircuit RoleDesign Meaning
Anode padForward current entry1.03 × 1.13 mm² AlSiCu metallization; compatible with conductive epoxy or solder die bonding; defines thermal path to heatsink.
Cathode padForward current exit / reverse blocking terminalNi/Ag metallization; optimized for wire bonding (Al ≤500 µm) and low-resistance cathode connection in parallel-chip configurations.

Key Features

FeatureDesign Value
EMCON technologyControlled carrier lifetime enables fast (ns-scale trr2) yet soft (S2 = 1) recovery without external snubbers.
Low Qrr temperature coefficientQrr increases only from 0.65 µC (25°C) to 1.3 µC (125°C); ensures predictable switching loss across operating range.
Photoimide passivationFrontside polymer layer provides mechanical protection and humidity resistance during module assembly and reflow.
Thin 120 µm dieReduces thermal resistance and improves thermal cycling endurance in press-pack and solder-bonded module formats.

Applications

Industrial Motor DrivesResonant LLC Converters

Use Scenario: Freewheeling diode in IGBT-based 3-phase inverter stages for HVAC compressors and pump drives.

IC Role / Device Role / Timing Role: Discrete high-voltage freewheeling diode chip bonded onto DC-link busbar or module substrate.

Use Value: Soft recovery (S2 = 1) suppresses voltage spikes during IGBT turn-off, reducing snubber component count and system EMI filter size.

Use Scenario: Secondary-side synchronous rectification replacement in high-efficiency 1–3 kW server PSUs.

IC Role / Device Role / Timing Role: Fast-recovery diode chip integrated into planar transformer-coupled rectifier subassembly.

Use Value: Low Qrr (1.3 µC) minimizes turn-off loss at 300–500 kHz switching frequencies, improving full-load efficiency by ≥0.4%.

Induction Heating InvertersUPS Output Stages

Use Scenario: Anti-parallel diode in half-bridge SiC MOSFET modules for 20–100 kHz resonant tank circuits.

IC Role / Device Role / Timing Role: Bare die mounted adjacent to SiC switch die to minimize parasitic inductance in high-di/dt paths.

Use Value: 600 A/µs di/dt rating and stable VF over –55 to +150 °C ensure consistent conduction timing and thermal stability during burst-mode operation.

Use Scenario: Boost-stage freewheeling diode in online double-conversion UPS systems with 1200 V DC bus.

IC Role / Device Role / Timing Role: Die-attached discrete diode in forced-air-cooled power stack with copper baseplate.

Use Value: 1200 V VRRM and 6 A IFRM rating support 200% overload capability for 10 s while maintaining <1.75 V VF drift up to 150 °C.

Availability

SIDC03D120H6X1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, resonant LLC converters, induction heating inverters, and UPS output stages requiring stable component supply and wafer-level traceability.

Supply support for SIDC03D120H6X1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

SIDC03D120H6X1SA3 belongs to Infineon's high-voltage discrete diode chip portfolio, designed specifically for integration into EUPEC power modules and custom hybrid assemblies demanding soft-switching behavior and high thermal reliability.

FAQ

Is SIDC03D120H6X1SA3 a packaged device or bare die?

SIDC03D120H6X1SA3 is a bare silicon die - not encapsulated. It measures 1.75 × 1.85 mm², features AlSiCu anode and Ni/Ag cathode metallization, and is supplied on foil for die-attach into power modules or discrete hybrid substrates using conductive epoxy or solder.

What does "EMCON technology" mean for this diode?

EMCON (Emitter Controlled) is Infineon's proprietary process for lifetime-controlled silicon diodes. It achieves precise carrier recombination via platinum diffusion, enabling fast reverse recovery (trr2 < 50 ns) with inherently soft current fall (S2 = 1), eliminating need for external snubbers in most hard-switching applications.

Can SIDC03D120H6X1SA3 replace standard ultrafast diodes in existing designs?

Yes - provided mechanical integration (die attach, wire bonding) and thermal interface are validated. Its 1.6 V VF at 3 A, 1.3 µC Qrr at 125 °C, and soft recovery offer measurable improvement over legacy 1200 V ultrafast diodes like BYQ28E-200, especially in resonant topologies where EMI and switching loss dominate.

What is the significance of the "X1SA3" suffix in the ordering code?

The "X1SA3" suffix denotes Infineon's internal wafer fabrication lot and test configuration identifier. It specifies the die revision (X1), probe test grade (S), assembly prep status (A), and final visual inspection level (3), ensuring traceability to wafer batch and electrical screening per CECC 40000 standards.

SIDC03D120H6X1SA3 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 1200 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Sawn on foil
Operating Temperature - Junction:
-55°C ~ 150°C

SIDC03D120H6X1SA3 FAQ

1.How can I place an order for SIDC03D120H6X1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC03D120H6X1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC03D120H6X1SA3 reliable?

The price and inventory of SIDC03D120H6X1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC03D120H6X1SA3 is usually 5 days.

3.What payment methods are accepted for SIDC03D120H6X1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC03D120H6X1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC03D120H6X1SA3?

SIDC03D120H6X1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC03D120H6X1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC03D120H6X1SA3?

For technical support, including SIDC03D120H6X1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC03D120H6X1SA3 requirements.

6.How does Aetrix verify that SIDC03D120H6X1SA3 is sourced from the original manufacturer or authorized distributors?

All SIDC03D120H6X1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC03D120H6X1SA3 meets industry standards.

7.What is the process for return or replacement of SIDC03D120H6X1SA3?

All SIDC03D120H6X1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC03D120H6X1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC03D120H6X1SA3 part is unused and in its original packaging.

Return procedure for SIDC03D120H6X1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIDC03D120H6X1SA3 Tags

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