Infineon Technologies SIDC09D60E6 UNSAWN

Overview

SIDC09D60E6 from Infineon Technologies is a 600 V, 20 A general-purpose silicon diode in wafer form (un-sawn die), designed for high-voltage rectification in industrial power supplies and motor drive front-ends. It features low forward voltage drop (1.85 V at 20 A), soft reverse recovery (Qrr = 140 nC), and operates up to 175 °C junction temperature.

For engineers reviewing the SIDC09D60E6 datasheet, SIDC09D60E6 pinout, SIDC09D60E6 application, or SIDC09D60E6 equivalent, key selection criteria include rated blocking voltage, surge current capability (IFSM = 180 A), thermal resistance (RthJC = 0.9 K/W), and wafer-level handling requirements for custom packaging integration.

Technical Context

This un-sawn silicon die implements a planar passivated PN junction optimized for fast, soft-recovery switching in AC/DC and DC/DC conversion stages. Its 600 V VRRM rating supports 400 VAC input rectification with margin, and its 20 A IF(AV) rating assumes double-sided cooling on a copper carrier.

The die's RthJC of 0.9 K/W and maximum Tj of 175 °C enable high-power density designs when mounted with low-interface thermal resistance. The Qrr of 140 nC and trr of 65 ns support operation in 20–100 kHz hard-switched topologies without excessive switching loss or EMI.

Key Specifications

Pinout & Package

Package: Un-sawn silicon die (wafer format), no molded package; requires custom mounting on DBC or metal-base substrate with anode/cathode metallization exposed on top surface. Dimensions: 4.2 mm × 4.2 mm × 0.25 mm (typical).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, wafer-form diode applications.

Compared with MDD100-16N1, SIDC09D60E6 offers better thermal efficiency and smaller footprint for 600 V systems; versus VS-20ETS06-M3, it enables lower RthJC and higher power density in module-integrated designs.

Availability

SIDC09D60E6 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, motor drive input rectifiers, and renewable energy inverter stages requiring stable component supply and wafer-level integration flexibility.

Supply support for SIDC09D60E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SIDC09D60E6 belongs to Infineon's "CoolSiC™-complementary" silicon diode product line, engineered for high-efficiency, high-reliability rectification in next-generation power modules and custom-packaged converters.

FAQ

What is the recommended mounting method for SIDC09D60E6?

SIDC09D60E6 must be die-attached using sintered silver or high-temperature solder (e.g., AuSn) onto a DBC or direct copper bond substrate. Anode and cathode metallization are top-side; electrical interconnection requires aluminum or copper wire bonding or clip bonding. Thermal interface must maintain <0.25 K·cm²/W total resistance to ensure RthJC spec compliance.

Does SIDC09D60E6 require gate drive or control signals?

No. SIDC09D60E6 is a passive two-terminal power diode with no gate or control terminals. It conducts when anode voltage exceeds cathode voltage by >VF and blocks current in reverse bias up to VRRM. Its operation is fully autonomous and does not require timing, logic, or driver circuitry.

Can SIDC09D60E6 replace a standard TO-247 diode in existing designs?

Only with full mechanical and thermal redesign. As an un-sawn die, it lacks leads, housing, or standardized footprint. Direct replacement requires removing the TO-247 package, re-engineering the thermal path, adding wire bonds/clips, and validating reliability under thermal cycling. It is intended for new module-level integration-not drop-in upgrades.

What is the maximum allowable soldering temperature for die attachment?

For sintered silver paste, peak temperature must not exceed 280 °C for ≤60 seconds. For AuSn solder, peak temperature is 300 °C for ≤10 seconds. Exceeding these limits risks metallization delamination or junction damage. Reflow profile must avoid thermal shock; ramp rate should be ≤2 °C/s below 200 °C and ≤1.5 °C/s above.