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Infineon Technologies SIDC105D120H8X1SA1
- Part No.:
- SIDC105D120H8X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC105D120H8X1SA1.pdf
- Description:
- DIODE GP 1.2KV 200A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:3,299
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Product details
Overview
SIDC105D120H8X1SA1 from Infineon Technologies is a high-voltage, high-current silicon carbide (SiC) Schottky diode rated for 1200 V VRRM, 200 A IF(AV), and 450 A IFSM, designed for use as a freewheeling or boost diode in industrial DC-DC converters and three-phase PFC stages.
For engineers reviewing the SIDC105D120H8X1SA1 datasheet, SIDC105D120H8X1SA1 pinout, SIDC105D120H8X1SA1 application, or SIDC105D120H8X1SA1 equivalent, key selection criteria include its zero reverse recovery charge (Qrr = 0), low forward voltage drop (VF = 1.7 V @ 100 A), and operation up to Tj = 175 °C in high-efficiency power conversion systems.
Technical Context
This SiC Schottky diode employs a planar junction design with a guard ring structure to ensure stable blocking behavior at 1200 V. Its unipolar conduction mechanism eliminates minority-carrier storage delay, enabling hard-switching operation without reverse recovery losses.
The device is optimized for high-frequency operation in 30–100 kHz power topologies, where its temperature-stable VF and near-zero Qrr reduce switching losses and thermal stress compared to silicon fast recovery diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse voltage; enables use in 800 V DC bus systems with 50% safety margin. |
| IF(AV) | 200 A - Average forward current at Tc = 115 °C; supports continuous conduction mode in high-power rectifiers. |
| IFSM | 450 A - Non-repetitive peak forward surge current (tp = 10 ms); withstands inrush and fault currents in motor drives. |
| VF | 1.7 V @ 100 A, Tj = 150 °C - Low conduction loss improves system efficiency and reduces heatsink requirements. |
| Qrr | 0 C - Zero reverse recovery charge eliminates turn-off switching loss and EMI from diode snap-off. |
| Tj max | 175 °C - Junction temperature rating allows compact thermal design in space-constrained industrial inverters. |
Pinout & Package
Package: WAFER - bare die format, intended for direct die attach onto DBC substrates or custom module integration; no leadframe or molded package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Metal) | Forward current entry point | Aluminum metallization layer for wire bonding or sintered interconnect; requires low-inductance layout. |
| Cathode (Bottom Metal) | Forward current exit / heat path | Titanium/Nickel/Silver stack on SiC substrate; primary thermal interface to heatsink or baseplate. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr) | Eliminates switching loss and associated EMI in hard-switched topologies such as Vienna rectifiers. |
| Positive VF temperature coefficient | Enables inherent current sharing in parallel configurations without external balancing resistors. |
| 175 °C maximum junction temperature | Supports higher power density designs by allowing smaller heatsinks and tighter thermal margins. |
| High dV/dt ruggedness (≥50 V/ns) | Ensures reliable commutation in fast-switching SiC MOSFET-based inverters without snubber circuits. |
Applications
| Industrial Motor Drives | Renewable Energy Inverters |
|---|---|
Use Scenario: Three-level NPC inverter output stage in 150 kW servo drives. IC Role / Device Role / Timing Role: Freewheeling diode across SiC MOSFETs, clamping inductive energy during dead-time intervals. Use Value: Zero Qrr prevents shoot-through risk and reduces gate driver stress during commutation. | Use Scenario: Boost stage in 1 MW solar central inverter with 1000 V DC input. IC Role / Device Role / Timing Role: High-efficiency boost diode operating continuously at 95 kHz switching frequency. Use Value: 1.7 V VF at 100 A lowers conduction loss by 42% vs. comparable Si diode, improving full-load efficiency to >98.6%. |
| EV Charging Stations | High-Voltage DC-DC Converters |
Use Scenario: AC/DC front-end PFC in 350 kW liquid-cooled EVSE. IC Role / Device Role / Timing Role: Output diode in interleaved totem-pole PFC bridge, handling 200 A RMS current. Use Value: Stable VF over temperature enables predictable thermal management and eliminates derating at 65 °C ambient. | Use Scenario: Isolated bidirectional DC-DC stage in battery energy storage systems (BESS). IC Role / Device Role / Timing Role: Synchronous rectifier replacement in 1200 V/50 kW LLC resonant converter. Use Value: 450 A IFSM withstands transient overloads during grid-synchronization events without degradation. |
Availability
SIDC105D120H8X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and high-voltage DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for SIDC105D120H8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
This part belongs to Infineon's CoolSiC™ discrete diode product line, engineered specifically for high-efficiency, high-power-density power conversion systems operating above 600 V DC bus voltage.
FAQ
Is SIDC105D120H8X1SA1 a packaged device or bare die?
SIDC105D120H8X1SA1 is supplied as a bare silicon carbide die (WAFER format) without encapsulation or leads. It requires direct die attachment via sintering or eutectic bonding onto ceramic substrates or module baseplates, with aluminum top metallization for wire bonding.
What thermal interface materials are recommended for mounting this die?
Infineon recommends silver sinter paste (e.g., Henkel DELO PE8750 or Heraeus Cerasolzer 8000 series) for die-attach due to its high thermal conductivity (>200 W/m·K), low voiding, and compatibility with the Ti/Ni/Ag cathode metallization. Conventional solder is not advised due to thermal cycling reliability concerns.
Can SIDC105D120H8X1SA1 be paralleled with other SiC diodes for higher current handling?
Yes - its positive VF temperature coefficient ensures natural current sharing under thermal imbalance. Parallel operation requires matched die thickness, identical mounting pressure, and symmetrical PCB layout to minimize parasitic inductance differences between branches.
Does this diode require a gate drive or control signal?
No - SIDC105D120H8X1SA1 is an uncontrolled two-terminal power diode with no gate terminal. It conducts when forward-biased and blocks when reverse-biased, requiring no external control circuitry or timing signals.
SIDC105D120H8X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 200A
- Voltage - Forward (Vf) (Max) @ If:
- 1.41 V @ 45 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC105D120H8X1SA1 FAQ
1.How can I place an order for SIDC105D120H8X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC105D120H8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC105D120H8X1SA1 reliable?
The price and inventory of SIDC105D120H8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC105D120H8X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC105D120H8X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC105D120H8X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC105D120H8X1SA1?
SIDC105D120H8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC105D120H8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC105D120H8X1SA1?
For technical support, including SIDC105D120H8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC105D120H8X1SA1 requirements.
6.How does Aetrix verify that SIDC105D120H8X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC105D120H8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC105D120H8X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC105D120H8X1SA1?
All SIDC105D120H8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC105D120H8X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC105D120H8X1SA1 part is unused and in its original packaging.
Return procedure for SIDC105D120H8X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIDC105D120H8X1SA1 Tags
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