Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix SIP21106DT-12-E3

Part No.:
SIP21106DT-12-E3
Manufacturer:
Vishay Siliconix
Category:
Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
Package:
SOT-23-5 Thin, TSOT-23-5
Datasheet:
AetrixSIP21106DT-12-E3.pdf
Description:
IC REG LIN 1.2V 150MA TSOT23-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,293

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIP21106DT-12-E3 from Vishay Siliconix is a 150 mA, low-noise, low-dropout linear regulator with fixed 1.2 V output, 135 mV dropout at full load, 60 µV(rms) output noise (10 Hz–100 kHz), ±1.0 % output accuracy at 25 °C, and ultra-low 35 µA ground current at 1 mA load-designed for battery-powered RF-sensitive applications such as cellular handsets and digital cameras.

For engineers reviewing the SIP21106DT-12-E3 datasheet, SIP21106DT-12-E3 pinout, SIP21106DT-12-E3 application, or SIP21106DT-12-E3 equivalent, key selection criteria include dropout voltage under 150 mA load, output noise performance without external bypass capacitor dependency, shutdown current <1 µA, thermal protection at 160 °C, and compatibility with 1 µF ceramic output capacitors in TSOT23-5L footprint.

Technical Context

The SIP21106DT-12-E3 employs a P-channel MOSFET pass transistor with 0.9 Ω typical on-resistance, enabling low quiescent current and eliminating base-drive losses inherent in PNP-based LDOs. Its bandgap reference (1.2 V) feeds an error amplifier that regulates output by modulating the PMOS gate voltage.

Startup includes active pull-down for fast transient response, and shutdown mode engages a 100 Ω NMOS auto-discharge path to ground the output within 1 ms for 1 µF load. The BP pin supports optional 10 nF noise-bypass filtering but is not required for stability.

Key Specifications

ParameterValue and Actual Design Meaning
Output VoltageFixed 1.2 V ±1.0 % at 25 °C - ensures precise core voltage for low-power microcontrollers and RF ICs.
Dropout Voltage135 mV at 150 mA load - enables operation down to VIN = 1.335 V, extending battery runtime in single-cell Li-ion or alkaline systems.
Output Noise60 µV(rms), 10 Hz–100 kHz - meets stringent RF supply noise requirements without mandatory external bypass capacitor.
Ground Current35 µA typical at 1 mA load - minimizes standby power loss in always-on subsystems like real-time clocks or sensor interfaces.
Shutdown Current≤1 µA at 85 °C - guarantees negligible battery drain during deep sleep modes in portable electronics.
Thermal Protection160 °C junction shutdown with 20 °C hysteresis - prevents permanent damage during sustained overload or poor PCB thermal design.
PackageTSOT23-5L (3.05 mm × 2.85 mm × 1.0 mm) - compact, lead-free surface-mount package compatible with standard SMT assembly.

Pinout & Package

TSOT23-5L package: 3.05 mm × 2.85 mm × 1.0 mm, Pb-free, industrial temperature range (−40 °C to +85 °C).

Pin/TerminalCircuit RoleDesign Meaning
1 - ENEnable control inputActive-high logic: ≥1.2 V enables regulation; ≤0.4 V disables output and activates 100 Ω auto-discharge path.
2 - GNDPower ground referencePrimary thermal and electrical return path; must connect directly to large PCB ground plane for thermal management.
3 - VINInput supplyAccepts 2.2 V to 6.0 V input; requires 1 µF ceramic bypass capacitor to ground for stability and line-transient suppression.
4 - VOUTRegulated outputDelivers stable 1.2 V to load; supports 1 µF ceramic output capacitor with ESR < 0.4 Ω for full-temperature stability.
5 - BPNoise bypass terminalOptional 10 nF capacitor to ground reduces output noise; not required for basic operation or stability.

Key Features

FeatureDesign Value
Ultra-low noise output60 µV(rms) over 10 Hz–100 kHz bandwidth enables direct use in RF front-end power rails without additional filtering.
Low dropout architecture135 mV dropout at 150 mA allows operation from near-dead batteries (e.g., 1.335 V input for 1.2 V output), maximizing usable battery capacity.
Auto-discharge on shutdownIntegrated 100 Ω NMOS discharges VOUT to ground in <1 ms for 1 µF load, preventing unintended back-powering of downstream circuitry.
Robust protection suiteIncludes short-circuit limiting (330 mA typical) and thermal shutdown (160 °C) with hysteresis, enabling reliable operation in uncontrolled environments.
Small-footprint packagingTSOT23-5L footprint (3.05 mm × 2.85 mm) saves board space versus SC70-5L or TSC75-6L variants while maintaining thermal performance.

Applications

Cellular HandsetsDigital Cameras

Use Scenario: Powering baseband processor core voltage in GSM/UMTS feature phones with single-cell Li-ion battery.

IC Role / Device Role / Timing Role: Primary low-noise LDO delivering stable 1.2 V to CPU core, replacing switching regulators where EMI sensitivity prohibits inductor use.

Use Value: 60 µV(rms) noise prevents RF desensitization; 135 mV dropout extends talk time by >12% compared to legacy 200 mV-dropout LDOs.

Use Scenario: Supplying image sensor analog front-end and ISP core in compact digital still cameras.

IC Role / Device Role / Timing Role: Low-noise bias source for CCD/CMOS sensor analog chain and low-power ISP logic block.

Use Value: Enables clean analog signal path without post-regulation filtering; 35 µA ground current preserves standby battery life during image capture buffering.

Wireless ModemsNoise-Sensitive RF Systems

Use Scenario: Regulating power for LTE/Wi-Fi modem SoC in portable hotspots and M2M gateways.

IC Role / Device Role / Timing Role: Secondary LDO supplying 1.2 V to RF transceiver digital control logic and PLL reference circuits.

Use Value: ±1.0 % output accuracy maintains timing margin for high-speed serial interfaces; 1 µA shutdown current enables rapid power cycling between data bursts.

Use Scenario: Providing clean supply to GPS/GNSS RF receivers and low-phase-noise VCOs in navigation modules.

IC Role / Device Role / Timing Role: Ultra-low-noise voltage source for RF signal chain biasing, decoupling sensitive analog nodes from noisy digital domains.

Use Value: 60 µV(rms) noise floor avoids degradation of GPS C/N₀ ratio; BP pin flexibility allows optional 10 nF cap for worst-case RF immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise LDO applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MCP1700T-1202E/MB150 mA, 1.2 V fixed, 600 mV dropout at 150 mA, 30 µV(rms) noise, SOT23-5 packageHigher dropout limits usable input range; lower noise suits ultra-sensitive analog, but reduced efficiency in battery systemsSelect when absolute minimum noise dominates over battery life; verify thermal derating for 150 mA continuous load in SOT23-5.
Torex XC6206P122MR-G150 mA, 1.2 V fixed, 250 mV dropout at 150 mA, 40 µV(rms) noise, SOT23-5 packageLower noise than SIP21106DT-12-E3 but higher dropout reduces headroom; no auto-discharge functionPrefer for noise-critical analog supplies where shutdown discharge is handled externally; confirm 250 mV dropout meets system VIN min spec.

Compared with MCP1700T-1202E/MB and XC6206P122MR-G, SIP21106DT-12-E3 delivers superior efficiency via 135 mV dropout while maintaining competitive noise (60 µV), and uniquely integrates auto-discharge-critical for systems requiring fast, controlled power-down without external circuitry.

Availability

SIP21106DT-12-E3 is available at Aetrix Electronics and suitable for cellular handsets, digital cameras, and wireless modems requiring stable component supply despite end-of-life status through verified legacy inventory channels.

Supply support for SIP21106DT-12-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures high-performance discrete semiconductors and integrated power solutions, emphasizing reliability, miniaturization, and efficiency in power management ICs.

The SiP21106 series targets portable, battery-operated electronics needing ultra-low-noise, low-quiescent-current LDOs with robust thermal and short-circuit protection in miniature packages.

FAQ

What is the maximum input voltage rating for SIP21106DT-12-E3?

The absolute maximum input voltage for SIP21106DT-12-E3 is 6.5 V relative to GND. Operation above 6.0 V is outside the recommended range and may compromise long-term reliability. The device is specified for continuous operation from 2.2 V to 6.0 V input across −40 °C to +85 °C ambient temperature.

Does SIP21106DT-12-E3 require an external bypass capacitor on the BP pin?

No, SIP21106DT-12-E3 does not require an external bypass capacitor on the BP pin for stable operation. A 10 nF ceramic capacitor is optional and only used to reduce output noise to 60 µV(rms); omitting it maintains regulation but increases noise to ~350 µV(rms) per family specifications.

What is the thermal shutdown behavior of SIP21106DT-12-E3?

SIP21106DT-12-E3 activates thermal shutdown at approximately 160 °C junction temperature and resumes normal operation after cooling by ~20 °C hysteresis. During sustained overload, this results in pulsed output rather than permanent latch-off, protecting the device while allowing recovery once thermal conditions improve.

Can SIP21106DT-12-E3 be used with ceramic output capacitors smaller than 1 µF?

Yes, SIP21106DT-12-E3 is stable with output capacitance as low as 6 nF/mA (≈0.9 µF at 150 mA). However, 1 µF is the minimum recommended value for guaranteed stability across the full −40 °C to +85 °C temperature range and all load conditions per datasheet validation.

Is SIP21106DT-12-E3 RoHS compliant and lead-free?

Yes, SIP21106DT-12-E3 is RoHS Directive 2002/95/EC compliant and manufactured in a lead-free process. The TSOT23-5L package uses matte tin plating and meets JEDEC MO-193 mechanical standards, with full compliance documented in Vishay's PPAP and material declarations.

SIP21106DT-12-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
SOT-23-5 Thin, TSOT-23-5
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Output Configuration:
Positive
Output Type:
Fixed
Number of Regulators:
1
Voltage - Input (Max):
6V
Voltage - Output (Min/Fixed):
1.2V
Voltage - Output (Max):
-
Voltage Dropout (Max):
-
Current - Output:
150mA
Current - Quiescent (Iq):
85 µA
Current - Supply (Max):
-
PSRR:
75dB ~ 40dB (1kHz ~ 100kHz)
Control Features:
Enable
Protection Features:
Over Temperature, Short Circuit
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-23-5

SIP21106DT-12-E3 FAQ

1.How can I place an order for SIP21106DT-12-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIP21106DT-12-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIP21106DT-12-E3 reliable?

The price and inventory of SIP21106DT-12-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIP21106DT-12-E3 is usually 5 days.

3.What payment methods are accepted for SIP21106DT-12-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIP21106DT-12-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIP21106DT-12-E3?

SIP21106DT-12-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIP21106DT-12-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIP21106DT-12-E3?

For technical support, including SIP21106DT-12-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIP21106DT-12-E3 requirements.

6.How does Aetrix verify that SIP21106DT-12-E3 is sourced from the original manufacturer or authorized distributors?

All SIP21106DT-12-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIP21106DT-12-E3 meets industry standards.

7.What is the process for return or replacement of SIP21106DT-12-E3?

All SIP21106DT-12-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIP21106DT-12-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIP21106DT-12-E3 part is unused and in its original packaging.

Return procedure for SIP21106DT-12-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIP21106DT-12-E3 Tags

  • SIP21106DT-12-E3
  • SIP21106DT-12-E3 PDF
  • SIP21106DT-12-E3 Datasheet
  • SIP21106DT-12-E3 Specifications
  • SIP21106DT-12-E3 Images
  • Vishay Siliconix
  • Vishay Siliconix SIP21106DT-12-E3
  • Buy SIP21106DT-12-E3
  • SIP21106DT-12-E3 Price
  • SIP21106DT-12-E3 Distributor
  • SIP21106DT-12-E3 Supplier
  • SIP21106DT-12-E3 Wholesale
Related Products
MIC5504-1.8YM5-TR
MIC5504-1.8YM5-TR

Microchip Technology

MIC5504-3.3YM5-TR
MIC5504-3.3YM5-TR

Microchip Technology

MIC5365-3.0YC5-TR
MIC5365-3.0YC5-TR

Microchip Technology

MIC5365-1.8YC5-TR
MIC5365-1.8YC5-TR

Microchip Technology

MIC5365-2.5YC5-TR
MIC5365-2.5YC5-TR

Microchip Technology

MIC5365-3.3YC5-TR
MIC5365-3.3YC5-TR

Microchip Technology

MIC5365-3.3YD5-TR
MIC5365-3.3YD5-TR

Microchip Technology

MIC5317-3.3YM5-TR
MIC5317-3.3YM5-TR

Microchip Technology

TLV1117LV33DCYR
TLV1117LV33DCYR

Texas Instruments

MIC5317-3.3YMT-TZ
MIC5317-3.3YMT-TZ

Microchip Technology

MIC5528-3.3YMT-TR
MIC5528-3.3YMT-TR

Microchip Technology

TLV75801PDRVR
TLV75801PDRVR

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER