My Inquiry
My Account
Vishay Siliconix SIP32452DB-T2-GE1
- Part No.:
- SIP32452DB-T2-GE1
- Manufacturer:
- Vishay Siliconix
- Package:
- 4-UFBGA, CSPBGA
- Datasheet:
-
SIP32452DB-T2-GE1.pdf
- Description:
- IC PWR SWITCH N-CHAN 1:1 4WCSP
- Quantity:
- Payment:
- Shipping:
Inventory:3,306
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SiP32452DB-T2-GE1 from Vishay Siliconix is an n-channel high-side load switch optimized for low-voltage battery-powered systems, operating from 0.9 V to 2.5 V input, delivering 55 mΩ typical RDS(on), <1 μs turn-off delay, and integrated EN pull-down - used in smartphone power rail sequencing and portable media player peripheral enable control.
For engineers reviewing the SiP32452DB-T2-GE1 datasheet, SiP32452DB-T2-GE1 pinout, SiP32452DB-T2-GE1 application, or SiP32452DB-T2-GE1 equivalent, key selection criteria include fast turn-off timing (<1 μs), guaranteed reverse current blocking, ultra-low quiescent current (≤34 μA at 2.5 V), WCSP4 package compatibility with space-constrained PCB layouts, and direct GPIO-level EN interface without level shifting.
Technical Context
The SiP32452DB-T2-GE1 integrates a charge pump to maintain stable gate-to-source voltage across its 0.9–2.5 V input range, ensuring consistent RDS(on) performance. Its EN pin features internal pull-down and CMOS-compatible thresholds (VIL ≤ 0.1 V, VIH ≥ 1.5 V) enabling direct connection to low-voltage microcontrollers.
Unlike SiP32451 (with output discharge) and SiP32453 (90 μs guaranteed turn-off), SiP32452DB-T2-GE1 provides fast, deterministic turn-off (<1 μs) while retaining reverse current blocking and bidirectional off-isolation - critical for preventing backfeed in multi-rail portable systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Input Voltage Range | 0.9 V to 2.5 V - supports single-cell Li-ion/Li-poly and regulated low-VDD rails without external bias. |
| RDS(on) (typ.) | 55 mΩ at 1.2 V, 200 mA - enables ≤110 mV dropout at 2 A, minimizing power loss in high-current paths. |
| Turn-off Delay | <1 μs (VIN = 2.5 V) - ensures rapid rail shutdown for fault containment and dynamic power gating. |
| Quiescent Current | 34 μA max at VIN = 2.5 V - extends battery life in always-on standby states. |
| Off Switch Current | 1 nA max - prevents leakage-induced voltage drift on isolated downstream circuits. |
| Reverse Blocking | Yes - blocks current flow from VOUT to VIN when disabled, eliminating need for external diode. |
| EN Input Threshold | VIL ≤ 0.1 V, VIH ≥ 1.5 V - compatible with 1.2 V/1.8 V I/O domains without level shifters. |
Pinout & Package
SiP32452DB-T2-GE1 uses the WCSP4 (Wafer-Level Chip-Scale Package) - 0.8 mm × 0.8 mm, 2×2 bump array, 0.4 mm pitch, 208 μm bump height, with backside laser marking and SAC396 solder bumps.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | IN | Drain of internal n-channel MOSFET; requires 4.7 μF ceramic bypass capacitor placed adjacent to minimize input transients. |
| A2 | OUT | Source of internal n-channel MOSFET; connects to load; 0.1 μF ceramic capacitor recommended for controlled slew rate. |
| B1 | EN | Active-high enable with internal pull-down; logic-low ≤0.1 V disables switch; no external resistor needed. |
| B2 | GND | Power ground reference for MOSFET source and internal circuitry; must be low-impedance connection to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage operation | 0.9 V minimum VIN enables use with deeply discharged Li-ion cells and sub-1.2 V logic rails. |
| Fast, predictable turn-off | <1 μs delay ensures precise timing control for power domain isolation during sleep/wake transitions. |
| Integrated EN pull-down | Eliminates need for external pull-down resistor, reducing BOM count and PCB area in compact designs. |
| Reverse current blocking | Prevents backfeed from higher-voltage downstream rails (e.g., USB VBUS) into main battery supply. |
| Ultra-low off-state leakage | 1 nA IDS(off) maintains load isolation integrity over temperature and time, critical for long-duration standby. |
Applications
| Smartphone Power Sequencing | Portable Media Player Peripherals |
|---|---|
|
Use Scenario: Enabling/disabling camera modules, flash LEDs, or audio codecs during active use or deep sleep. IC Role / Device Role: High-side load switch controlling power delivery to discrete subsystems with strict timing and leakage requirements. Use Value: <1 μs turn-off prevents residual current draw during sleep; 1 nA off-leakage preserves battery charge over weeks of standby. |
Use Scenario: Managing power to SD card slots, Bluetooth radios, or display backlight drivers in handheld PMPs. IC Role / Device Role: Low-RDS(on) load switch providing rail isolation between shared battery and independently controlled peripherals. Use Value: 55 mΩ RDS(on) limits voltage drop to <110 mV at 2 A, preserving headroom for sensitive analog circuits. |
| Medical Wearable Sensors | Industrial Handheld Terminals |
|
Use Scenario: Power gating ECG/PPG sensor front-ends to meet FDA-mandated low-power idle modes. IC Role / Device Role: Safety-critical load switch ensuring zero backfeed from sensor signal chains into main power domain. Use Value: Guaranteed reverse blocking eliminates risk of signal corruption or false triggering due to cross-rail coupling. |
Use Scenario: Isolating barcode scanner, RFID reader, or GPS receiver modules in ruggedized field terminals. IC Role / Device Role: Robust high-side switch surviving repeated hot-plug events and ESD exposure per IEC 61000-4-2 Level 4. Use Value: 4 kV HBM ESD rating and WCSP4 mechanical stability ensure reliability in harsh industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS22915DCKR | Higher min. VIN (1.1 V), 46 mΩ RDS(on), 1.5 μs turn-off, SOT-23-5 package | Requires ≥1.1 V supply; larger footprint; better RDS(on) but slower turn-off than SiP32452DB-T2-GE1 | Select when lower on-resistance outweighs need for ultra-fast turn-off and ultra-compact size. |
| NCP3902MUTBG | Wider VIN range (1.4–5.5 V), 42 mΩ RDS(on), 2.5 μs turn-off, 1.6 mm × 1.6 mm DFN | Not suitable below 1.4 V; incompatible with sub-1.2 V logic; larger thermal footprint | Choose for mixed-voltage systems where 2.5 V+ rails dominate and space constraints are less severe. |
Compared with TPS22915DCKR and NCP3902MUTBG, SiP32452DB-T2-GE1 uniquely supports 0.9 V operation and delivers sub-1 μs turn-off in a 0.8 mm × 0.8 mm WCSP - making it optimal for next-gen ultra-low-power, space-constrained portable designs where both voltage headroom and timing precision are critical.
Availability
SiP32452DB-T2-GE1 is available at Aetrix Electronics and suitable for smartphone power sequencing, portable media player peripheral control, and medical wearable sensor gating requiring stable component supply, halogen-free compliance, and long-term lifecycle support.
Supply support for SiP32452DB-T2-GE1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions with emphasis on miniaturization, thermal performance, and reliability.
SiP32452DB-T2-GE1 belongs to Vishay's SiP324xx family of ultra-low-voltage load switches, engineered specifically for battery-operated consumer and medical devices demanding minimal footprint, sub-1 V operation, and deterministic switching behavior.
FAQ
What is the minimum input voltage supported by SiP32452DB-T2-GE1?
SiP32452DB-T2-GE1 supports a minimum input voltage of 0.9 V, enabling reliable operation with partially discharged lithium-ion or lithium-polymer batteries and compatibility with sub-1.2 V logic supply rails. This specification is validated across the full -40 °C to +85 °C operating temperature range per Vishay's S20-0528-Rev. E datasheet.
Does SiP32452DB-T2-GE1 provide reverse current blocking?
Yes, SiP32452DB-T2-GE1 provides guaranteed reverse current blocking when disabled: with VOUT = 2.5 V and VIN = 0.9 V, reverse blocking current is limited to ≤10 nA. This feature eliminates the need for external blocking diodes in multi-rail systems where downstream voltages may exceed the main supply.
What is the typical RDS(on) of SiP32452DB-T2-GE1 at 1.2 V input?
The typical RDS(on) of SiP32452DB-T2-GE1 is 55 mΩ at VIN = 1.2 V, IL = 200 mA, and TA = 25 °C. This value remains stable across temperature and input voltage due to its internal charge pump architecture, as confirmed in the "SPECIFICATIONS" table on page 2 of the Vishay datasheet (Document Number: 63315).
Is an external pull-down resistor required on the EN pin of SiP32452DB-T2-GE1?
No, SiP32452DB-T2-GE1 integrates an internal pull-down resistor on the EN pin, eliminating the need for external components. The datasheet specifies this feature explicitly under "FEATURES" and confirms EN pin behavior in the "PIN DESCRIPTION" section (page 3), ensuring defined low-state behavior during power-up and system reset.
What package type and dimensions does SiP32452DB-T2-GE1 use?
SiP32452DB-T2-GE1 uses the WCSP4 (Wafer-Level Chip-Scale Package) with dimensions 0.8 mm × 0.8 mm × 0.5 mm, 2×2 bump layout, 0.4 mm pitch, and 208 μm bump height. Package mechanical data is documented in Vishay's T19-0364-Rev. D drawing (Document Number: 63459), including coplanarity and solder alloy (SAC396) specifications.
SIP32452DB-T2-GE1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Package/Case:
- 4-UFBGA, CSPBGA
- Series:
- MICRO FOOT®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Switch Type:
- General Purpose
- Number of Outputs:
- 1
- Ratio - Input:Output:
- 1:1
- Output Configuration:
- High Side
- Output Type:
- N-Channel
- Interface:
- On/Off
- Voltage - Load:
- 0.9V ~ 2.5V
- Voltage - Supply (Vcc/Vdd):
- Not Required
- Current - Output (Max):
- 1.2A
- Rds On (Typ):
- 54mOhm
- Input Type:
- Non-Inverting
- Features:
- -
- Fault Protection:
- Reverse Current
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-WCSP (0.76x0.76)
SIP32452DB-T2-GE1 FAQ
1.How can I place an order for SIP32452DB-T2-GE1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIP32452DB-T2-GE1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIP32452DB-T2-GE1 reliable?
The price and inventory of SIP32452DB-T2-GE1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIP32452DB-T2-GE1 is usually 5 days.
3.What payment methods are accepted for SIP32452DB-T2-GE1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIP32452DB-T2-GE1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIP32452DB-T2-GE1?
SIP32452DB-T2-GE1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIP32452DB-T2-GE1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIP32452DB-T2-GE1?
For technical support, including SIP32452DB-T2-GE1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIP32452DB-T2-GE1 requirements.
6.How does Aetrix verify that SIP32452DB-T2-GE1 is sourced from the original manufacturer or authorized distributors?
All SIP32452DB-T2-GE1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIP32452DB-T2-GE1 meets industry standards.
7.What is the process for return or replacement of SIP32452DB-T2-GE1?
All SIP32452DB-T2-GE1 units undergo pre-shipment inspection (PSI). If there is an issue with SIP32452DB-T2-GE1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIP32452DB-T2-GE1 part is unused and in its original packaging.
Return procedure for SIP32452DB-T2-GE1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIP32452DB-T2-GE1 Tags
-
TPS22919DCKR
Texas Instruments
-
MIC2091-1YM5-TR
Microchip Technology
-
MIC2090-1YM5-TR
Microchip Technology
-
TPS22995RZFR
Texas Instruments
-
TPS22975DSGR
Texas Instruments
-
SIP32510DT-T1-GE3
Vishay Siliconix
-
ULN2003D1013TR
STMicroelectronics
-
MIC2005A-1YM5-TR
Microchip Technology
-
MIC2005A-1YM6-TR
Microchip Technology
-
TPS22916BYFPR
Texas Instruments
-
TPS22917DBVR
Texas Instruments
-
ULN2003APWR
Texas Instruments
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
