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Vishay Siliconix SQM90142E_GE3
- Part No.:
- SQM90142E_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Single FETs, MOSFETs
- Package:
- TO-263-3
- Datasheet:
-
SQM90142E_GE3.pdf
- Description:
- MOSFET N-CH 200V 95A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:3,200
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Product details
Overview
SQM90142E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET designed for high-current switching in circuits requiring up to 200 V drain-to-source blocking capability. The device combines a 95 A continuous drain-current rating at a controlled case temperature of 25°C, 0.0153 Ω maximum on-resistance at VGS = 10 V, 175°C junction capability, and a thermally efficient TO-263 / D2PAK power package.
The SQM90142E_GE3 pinout, gate-drive requirements, safe operating area, avalanche capability, and body-diode recovery characteristics make it relevant to automotive load control, DC-DC converter power stages, inductive-load switching, and thermally managed power modules. SQM90142E_GE3 is AEC-Q101 qualified, with 100% gate-resistance and unclamped-inductive-switching production testing.
Technical Context
SQM90142E_GE3 requires a 10 V class gate drive to achieve its specified low on-resistance. The 2.5 V to 3.5 V gate-threshold range identifies only the beginning of channel conduction at 250 µA and must not be interpreted as the recommended fully enhanced gate voltage. At 20 A, the 0.0153 Ω maximum RDS(on) corresponds to approximately 6.1 W of conduction loss at 25°C. The temperature-dependent resistance limits increase this calculation to approximately 12.4 W at 125°C and 16.2 W at 175°C, before switching and diode losses are included.
The 95 A continuous drain-current rating applies at TC = 25°C and does not represent the permissible current at every drain voltage, PCB condition, or ambient temperature. Practical operating points must remain inside the safe operating area while keeping junction temperature below 175°C. The reduction to 55 A at TC = 125°C demonstrates the required current derating as case temperature rises.
Gate-driver sizing should be based primarily on the 55 nC typical and 85 nC maximum total gate charge rather than input capacitance alone. The switching-time ratings apply at VDD = 100 V, approximately 9 A drain current, a 10 V gate source, and 1 Ω external gate resistance. Hard-switched converter designs must also account for the body diode's 260 ns maximum reverse-recovery time and 1400 nC maximum recovery charge under the specified 10 A commutation condition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Device Type | Single automotive N-channel TrenchFET® power MOSFET for high-current switching and power conversion. |
| Drain-Source Voltage | 200 V maximum VDS. The circuit operating voltage, overshoot, and transient conditions must remain within this blocking limit with suitable design margin. |
| Gate-Source Voltage | ±20 V absolute maximum VGS. Gate-driver overshoot and negative ringing must remain within this range. |
| Continuous Drain Current | 95 A at TC = 25°C and 55 A at TC = 125°C. These are case-temperature-dependent maximum ratings rather than guaranteed operating currents for every voltage and thermal condition. |
| Pulsed Drain Current | 170 A maximum IDM under pulse conditions not exceeding 300 µs and 2% duty cycle. This value cannot be used as a repetitive continuous-current rating. |
| On-State Drain Current | 40 A minimum at VGS = 10 V and VDS of at least 5 V under the specified pulse-test condition. |
| Drain-Source On-Resistance | 0.0127 Ω typical and 0.0153 Ω maximum at VGS = 10 V and ID = 20 A. The maximum increases to 0.0310 Ω at 125°C and 0.0404 Ω at 175°C. |
| Gate Threshold Voltage | 2.5 V minimum, 3.0 V typical, and 3.5 V maximum at ID = 250 µA. This is a threshold measurement and does not indicate full channel enhancement. |
| Forward Transconductance | 54 S typical at VDS = 15 V and ID = 20 A, indicating the channel current response to gate-voltage variation under the stated operating point. |
| Total Gate Charge | 55 nC typical and 85 nC maximum at VGS = 10 V, VDS = 100 V, and ID = 9 A. This is a primary parameter for gate-driver current and switching-loss calculations. |
| Gate-Source and Gate-Drain Charge | 14 nC typical Qgs and 16.5 nC typical Qgd. The gate-drain charge influences Miller-plateau duration and switching-transition behavior. |
| Capacitance | Ciss is 3200 pF typical and 4200 pF maximum, Coss is 1300 pF typical and 1750 pF maximum, and Crss is 80 pF typical and 110 pF maximum at VDS = 25 V and 1 MHz. |
| Internal Gate Resistance | 1.35 Ω minimum, 2.74 Ω typical, and 4.20 Ω maximum at 1 MHz. Internal and external gate resistance together influence switching speed, ringing, and driver peak current. |
| Switching Times | Turn-on delay is 17 ns typical and 30 ns maximum; rise time is 8 ns typical and 15 ns maximum; turn-off delay is 39 ns typical and 60 ns maximum; fall time is 16 ns typical and 30 ns maximum. |
| Switching Test Conditions | Switching times are characterized at VDD = 100 V, approximately 9 A drain current, VGEN = 10 V, RL = 11.1 Ω, and external Rg = 1 Ω. Actual timing depends on the gate driver, load, and PCB layout. |
| Single-Pulse Avalanche Rating | 64 A IAS and 205 mJ EAS with L = 0.1 mH. The rating applies to a controlled single-pulse event and does not establish unrestricted repetitive-avalanche capability. |
| Body-Diode Current | 120 A continuous source current, limited by the package, and 170 A pulsed source current. Diode current remains subject to package temperature and total device dissipation. |
| Body-Diode Forward Voltage | 0.82 V typical and 1.5 V maximum at IF = 20 A and VGS = 0 V, affecting freewheel conduction loss and dead-time performance. |
| Body-Diode Recovery | 129 ns typical and 260 ns maximum trr, with 685 nC typical and 1400 nC maximum Qrr at IF = 10 A and di/dt = 100 A/µs. |
| Maximum Power Dissipation | 375 W at TC = 25°C and 125 W at TC = 125°C under controlled case-temperature conditions. Real PCB capability depends on the complete thermal path. |
| Thermal Resistance | 0.4°C/W maximum junction-to-case through the drain and 40°C/W junction-to-ambient on a 1-inch-square FR4 PCB test board. |
| Operating Temperature | -55°C to +175°C junction and storage temperature range. |
| Package | TO-263 / D2PAK surface-mount power package with a large electrically active drain tab and 2.54 mm nominal lead pitch. |
| Qualification and Testing | AEC-Q101 qualified, with 100% Rg and UIS testing. SQM90142E_GE3 is also RoHS compliant and halogen-free. |
Pinout & Package
SQM90142E_GE3 uses a TO-263 / D2PAK power package. In the top-view package orientation, the terminals follow a Gate-Drain-Source sequence. The center drain terminal and large exposed tab are electrically common. The tab provides the principal junction-to-case heat-transfer path and normally requires an appropriately sized drain copper area or thermal structure.
| Pin / Terminal | Circuit Role | Connection Guidance |
|---|---|---|
| Pin 1 - Gate | MOSFET control terminal | Connect to a controlled gate-driver output. A 10 V class gate drive is required to obtain the specified low RDS(on), and gate ringing must remain within the ±20 V limit. |
| Pin 2 - Drain | Main high-current drain connection | Connect to the switching node or power-current path. Pin 2 is electrically common with the exposed drain tab. |
| Pin 3 - Source | Main current-return and gate-drive reference terminal | Connect to the source-side power path. Gate-driver return routing should minimize shared inductance with the high-current source path. |
| Exposed Tab - Drain | Electrical drain and primary thermal interface | Connect to the drain copper area with sufficient conductor width, copper area, and thermal management for the intended current and power loss. |
The intrinsic body diode has its anode at Source and cathode at Drain. It is an internal device characteristic rather than a separate package terminal. Its forward voltage and reverse-recovery behavior must be included when current commutates through SQM90142E_GE3 during dead time, freewheeling, or transient events.
Key Features
- Automotive-grade 200 V N-channel TrenchFET® power MOSFET
- 0.0153 Ω maximum RDS(on) at VGS = 10 V and ID = 20 A
- 95 A continuous drain-current rating at TC = 25°C
- 55 nC typical and 85 nC maximum total gate charge
- 205 mJ rated single-pulse avalanche energy
- 170 A pulsed drain-current capability under the stated pulse limits
- 175°C maximum junction-temperature rating
- 0.4°C/W junction-to-case thermal resistance through the drain
- TO-263 / D2PAK surface-mount power package
- AEC-Q101 automotive qualification
- 100% gate-resistance and UIS production testing
- RoHS-compliant and halogen-free construction
Applications
| Automotive Low-Side Power Switching | DC-DC Converter Power Stages |
|---|---|
|
Use Scenario: Controlling automotive loads where normal operating voltage and switching transients remain safely within the 200 V VDS limit. Device Role: SQM90142E_GE3 operates as a gate-controlled low-side power switch between the load and return path. Use Value: Low on-resistance, AEC-Q101 qualification, and 175°C junction capability support thermally managed automotive switching designs. |
Use Scenario: Main-switch positions in converter stages operating within the MOSFET safe operating area and thermal limits. Device Role: SQM90142E_GE3 controls power transfer using a suitable 10 V gate driver and appropriately managed switching transitions. Use Value: The 55 nC typical gate charge and defined switching-time ratings support driver and loss calculations, while body-diode recovery must be evaluated in hard-switched commutation. |
| Inductive-Load Control | Thermally Managed Power Modules |
|
Use Scenario: Switching motors, solenoids, coils, relays, or other inductive loads that can produce turn-off voltage stress. Device Role: SQM90142E_GE3 interrupts load current and withstands controlled single-pulse avalanche events within its 64 A IAS and 205 mJ EAS limits. Use Value: The defined UIS rating provides measurable transient capability, but repetitive avalanche operation requires separate circuit validation. |
Use Scenario: Automotive or industrial power assemblies with a designed PCB thermal path, drain copper area, or additional heat spreading. Device Role: SQM90142E_GE3 carries the main switched current while transferring heat through its drain-connected D2PAK tab. Use Value: The 0.4°C/W junction-to-case rating supports high-power operation when case temperature, mounting, and total device loss are properly controlled. |
Equivalent & Alternatives
Possible SQM90142E_GE3 alternatives include the TO-263 SUM90142E-GE3 for non-automotive designs, the through-hole SUP90142E-GE3 for assemblies using TO-220AB mounting, and the automotive SQM10250E-GE3 when additional drain-source voltage margin is required. Each option changes at least one electrical, qualification, or mechanical requirement and must be approved against the actual circuit conditions.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SUM90142E-GE3 | 200 V N-channel ThunderFET® MOSFET in TO-263 with 90 A continuous drain current at TC = 25°C, 0.0150 Ω maximum RDS(on) at VGS = 10 V and ID = 30 A, 58 nC typical gate charge, and 175°C junction capability. It is a standard SUM-series device rather than an SQM automotive-qualified version. | Preserves the 200 V voltage class and TO-263 surface-mount package style for power supplies, converters, inverters, synchronous rectification, and motor-drive switching where automotive qualification is not required. | A strong same-package redesign candidate for non-automotive assemblies. Compare land pattern, pin orientation, SOA, 90 A current rating, 180 mJ avalanche energy, body-diode recovery, and qualification requirements before substitution. |
| SUP90142E-GE3 | 200 V N-channel ThunderFET® MOSFET with 90 A continuous drain current, 0.0152 Ω maximum RDS(on) at VGS = 10 V and ID = 30 A, 58 nC typical gate charge, and a TO-220AB through-hole package. | Provides similar voltage and conduction performance for through-hole power supplies, motor drives, inverters, and assemblies using a mechanically mounted heat sink rather than a D2PAK PCB footprint. | Use only for a PCB and mechanical redesign. SUP90142E-GE3 is not footprint-compatible with SQM90142E_GE3 and does not retain the SQM device's AEC-Q101 automotive qualification. |
| SQM10250E-GE3 | Automotive AEC-Q101 N-channel MOSFET in TO-263 with a higher 250 V VDS rating, 65 A continuous drain current at TC = 25°C, 0.0300 Ω maximum RDS(on) at VGS = 10 V and ID = 15 A, 50 nC typical gate charge, and 84 mJ single-pulse avalanche energy. | Adds 50 V of drain-source blocking margin while accepting lower current capability, approximately twice the maximum room-temperature on-resistance, and lower single-pulse avalanche energy. | Consider when voltage margin is the dominant requirement. Verify conduction loss, 65 A current limit, 84 mJ avalanche capability, footprint, gate-driver behavior, SOA, and thermal performance before replacing SQM90142E_GE3. |
SUM90142E-GE3 is the closest option when a 200 V TO-263 device is required without automotive qualification. SUP90142E-GE3 serves through-hole designs, while SQM10250E-GE3 retains automotive qualification and TO-263 packaging but trades current capability and on-resistance for a higher 250 V blocking rating. None of these parts should be treated as an automatic drop-in replacement.
Quality
SQM90142E_GE3 is AEC-Q101 qualified and receives 100% Rg and UIS production testing. Incoming quality control should verify Vishay traceability, lot and date information, original packaging labels, storage history, TO-263 dimensions, terminal condition, and drain-tab integrity. When electrical sampling is required, appropriate checks include gate leakage, drain-source breakdown, threshold voltage, on-resistance at a controlled 10 V gate drive, and body-diode forward voltage. Avalanche testing should be performed only under a defined qualification procedure because it can overstress or damage the sampled device.
Availability
SQM90142E_GE3 is available at Aetrix Electronics for automotive power switching, converter, maintenance, and production requirements, subject to current inventory, lead time, lot and date-code acceptance, traceability requirements, and packaging condition. Buyers should confirm the TO-263 / D2PAK configuration, 200 V rating, automotive qualification, gate-drive conditions, and thermal requirements before approving material for production use.
Manufacturer
SQM90142E_GE3 is manufactured by Vishay Siliconix, a Vishay business specializing in MOSFETs, power ICs, and related semiconductor technologies. The device belongs to Vishay's automotive TrenchFET® power MOSFET portfolio and combines AEC-Q101 qualification, low on-resistance, 175°C junction capability, avalanche characterization, and TO-263 thermal packaging for demanding power-control designs.
FAQ
What type of component is SQM90142E_GE3?
SQM90142E_GE3 is a single automotive-grade N-channel TrenchFET power MOSFET rated for 200 V drain-to-source operation. It combines a 0.0153 Ω maximum on-resistance at a 10 V gate drive with TO-263 packaging, AEC-Q101 qualification, 175°C junction capability, and 100% Rg and UIS production testing.
What is the correct pinout for SQM90142E_GE3?
SQM90142E_GE3 uses a Gate-Drain-Source sequence in the top-view package orientation: pin 1 is Gate, pin 2 is Drain, and pin 3 is Source. The large exposed tab is also electrically connected to Drain and provides the principal junction-to-case heat-transfer path.
Can SQM90142E_GE3 continuously carry 95 A in any circuit?
No. The 95 A rating for SQM90142E_GE3 is an absolute maximum specified at TC = 25°C. It is not an allowable current for every drain voltage, PCB, or ambient condition. Continuous current must be determined from conduction loss, case temperature, junction temperature, thermal design, and the safe operating area.
What gate-drive voltage should be used with SQM90142E_GE3?
SQM90142E_GE3 is characterized for low on-resistance at VGS = 10 V. Its 2.5 V to 3.5 V threshold range only marks the beginning of conduction at 250 µA and is not a full-enhancement voltage. The driver should provide a controlled 10 V class output and handle up to 85 nC gate charge.
How does temperature affect the on-resistance of SQM90142E_GE3?
SQM90142E_GE3 has a maximum RDS(on) of 0.0153 Ω at 25°C, increasing to 0.0310 Ω at 125°C and 0.0404 Ω at 175°C under the specified 20 A condition. At 20 A, these limits correspond to approximately 6.1 W, 12.4 W, and 16.2 W of conduction loss before switching losses are added.
What switching and body-diode limits apply to SQM90142E_GE3?
SQM90142E_GE3 has maximum turn-on delay, rise, turn-off delay, and fall times of 30 ns, 15 ns, 60 ns, and 30 ns under its 100 V switching condition. Its body diode has 260 ns maximum recovery time and 1400 nC maximum recovery charge at IF = 10 A and di/dt = 100 A/µs.
What alternatives can be considered for SQM90142E_GE3?
Related options include SUM90142E-GE3 for non-automotive TO-263 designs, SUP90142E-GE3 for TO-220AB assemblies, and SQM10250E-GE3 when 250 V automotive blocking capability is required. None is an automatic replacement for SQM90142E_GE3 because qualification, current, on-resistance, avalanche capability, body-diode behavior, and package requirements differ.
SQM90142E_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET
- Package/Case:
- TO-263-3
- Packaging:
- Tape & Reel
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-3
SQM90142E_GE3 FAQ
1.How can I place an order for SQM90142E_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM90142E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM90142E_GE3 reliable?
The price and inventory of SQM90142E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM90142E_GE3 is usually 5 days.
3.What payment methods are accepted for SQM90142E_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM90142E_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM90142E_GE3?
SQM90142E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM90142E_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM90142E_GE3?
For technical support, including SQM90142E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM90142E_GE3 requirements.
6.How does Aetrix verify that SQM90142E_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM90142E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM90142E_GE3 meets industry standards.
7.What is the process for return or replacement of SQM90142E_GE3?
All SQM90142E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM90142E_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM90142E_GE3 part is unused and in its original packaging.
Return procedure for SQM90142E_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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