Toshiba Semiconductor and Storage TCR2LN20,LF(SE

Overview

TCR2LN20,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.0 V fixed-output, 200 mA CMOS low dropout (LDO) regulator with ultra-low quiescent current (2 μA max), on/off control input, and auto-discharge function-designed for power management in space-constrained portable electronics such as cellular phones and wearables.

For engineers reviewing the TCR2LN20,LF(SE) datasheet, TCR2LN20,LF(SE) pinout, TCR2LN20,LF(SE) application, or TCR2LN20,LF(SE) equivalent, key selection criteria include its SDFN4 package (0.8 mm × 0.8 mm), ±1.0% output accuracy at 2.0 V, 300 mV typical dropout at 150 mA, ceramic capacitor compatibility (0.1 μF input/output), and overcurrent protection.

Technical Context

The TCR2LN20,LF(SE) integrates a CMOS pass transistor with internal voltage reference, error amplifier, and control logic enabling precise regulation and fast ON/OFF switching via the CONTROL pin. Its architecture supports stable operation with minimal external components and no need for ESR-tuned output capacitors.

It operates across −40°C to +85°C ambient temperature, accepts input voltages up to 6.0 V, and delivers regulated 2.0 V output with load regulation of ≤30 mV (1–150 mA) and line regulation of ≤15 mV (VOUT+0.5 V ≤ VIN ≤ 5.5 V). The auto-discharge feature actively pulls down VOUT when disabled, reducing residual voltage in battery-sensitive systems.

Key Specifications

Pinout & Package

SDFN4 package: ultra-small 4-pin plastic mold package (0.8 mm × 0.8 mm × 0.38 mm) with exposed thermal pad (center electrode, recommended to connect to GND for optimal thermal performance and noise immunity).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with AP2112K-2.0TRG1 and MCP1700T-2002E/TT, the TCR2LN20,LF(SE) uniquely balances ultra-low IQ (2 μA), integrated enable/auto-discharge, and sub-1 mm² footprint - making it optimal for miniaturized, battery-gated systems where both standby efficiency and controlled power-down are mandatory.

Availability

TCR2LN20,LF(SE) is available at Aetrix Electronics and suitable for wearable health sensors, BLE modules, smart card readers, and industrial wireless sensor nodes requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TCR2LN20,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-efficiency, high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with strong expertise in analog, power management, and discrete devices.

The TCR2LN series was developed specifically for ultra-compact, battery-powered portable electronics demanding minimal quiescent power, fast enable response, and ceramic capacitor simplicity - targeting next-generation wearables, IoT edge nodes, and space-constrained mobile accessories.

FAQ

What is the maximum input voltage rating for the TCR2LN20,LF(SE)?

The TCR2LN20,LF(SE) has an absolute maximum input voltage (VIN) rating of 6.0 V. Operation beyond this limit risks permanent damage. For reliable long-term use, Toshiba recommends keeping VIN ≤ 5.5 V under normal conditions, especially at elevated temperatures. The TCR2LN20,LF(SE) is designed to regulate efficiently from as low as 1.5 V, supporting single-cell Li-ion, Li-poly, or alkaline battery inputs.

Does the TCR2LN20,LF(SE) require external compensation components?

No, the TCR2LN20,LF(SE) is internally compensated and fully stable with only 0.1 μF ceramic capacitors on VIN and VOUT - no external resistors, capacitors, or ESR tuning are needed. This simplifies layout and reduces BOM count. The device's stability is verified across all output voltages in the TCR2LN series, including the 2.0 V variant TCR2LN20,LF(SE), under specified load and temperature conditions.

How does the auto-discharge function operate in the TCR2LN20,LF(SE)?

When the CONTROL pin is pulled low (≤0.4 V), the TCR2LN20,LF(SE) disables the pass transistor and activates an internal discharge switch between VOUT and GND. This switch has a typical on-resistance of ≤20 Ω, ensuring rapid discharge of the output capacitor. For the TCR2LN20,LF(SE), this feature eliminates residual voltage that could cause unintended wake-up or leakage in battery-powered systems - critical for applications like wearables and smart cards.

What is the thermal performance of the TCR2LN20,LF(SE) in its SDFN4 package?

The TCR2LN20,LF(SE) in SDFN4 package has a rated power dissipation of 300 mW when mounted on a standard FR4 board (40 mm × 40 mm, 50% copper coverage per side). Its thermal resistance (θJA) is optimized by the exposed center thermal pad, which must be soldered to a GND plane. At 150 mA output and 2.3 V input (300 mV dropout), power dissipation is ~45 mW - well within safe limits even at +85°C ambient, provided proper PCB thermal design is implemented for the TCR2LN20,LF(SE).

Is the TCR2LN20,LF(SE) compatible with lead-free reflow soldering processes?

Yes, the TCR2LN20,LF(SE) is qualified for lead-free reflow soldering per JEDEC J-STD-020, with a peak reflow temperature of 260°C. Its SDFN4 package uses matte tin plating and is RoHS-compliant. Toshiba specifies MSL Level 1 (unlimited floor life at ≤30°C/85% RH), eliminating bake requirements prior to assembly. The TCR2LN20,LF(SE)'s robust construction ensures reliability under standard Pb-free manufacturing conditions without delamination or solder joint failure.