Toshiba Semiconductor and Storage TCR5BM105,L3F

Overview

TCR5BM105,L3F from Toshiba Electronic Devices & Storage Corporation is a CMOS ultra-low-dropout linear voltage regulator with fixed 1.05 V output, 500 mA load capability, 100 mV typical dropout at full load (VBIAS = 3.3 V), and integrated on/off control. It features auto-discharge, thermal shutdown, overcurrent protection, and operates across −40 °C to +85 °C - designed for space-constrained portable power rails in cellular phones and wearables.

For engineers reviewing the TCR5BM105,L3F datasheet, TCR5BM105,L3F pinout, TCR5BM105,L3F application, or TCR5BM105,L3F equivalent, this page delivers verified technical context, real-world design implications of its DFN5B package, 1.05 V regulation accuracy (±18 mV), fast load transient response (±60 mV), and bias current behavior (19 μA typ. ON, 0.1 μA max. OFF) - all critical for low-power, high-density battery-powered systems.

Technical Context

The TCR5BM105,L3F uses a secondary bias rail (VBIAS) to enable ultra-low dropout operation independent of VIN, achieving 100 mV typical VDO at 500 mA with VOUT = 1.05 V and VBIAS = 3.3 V. Its internal architecture includes a precision reference derived from VBIAS, error amplifier, current-limit circuitry, and thermal shutdown logic - all optimized for stability with ≥1.0 μF ceramic input and ≥2.2 μF ceramic output capacitors.

This regulator supports active control via the CONTROL pin (VCT(OFF) ≤ 0.4 V, VCT(ON) ≥ 0.9 × VBIAS), enabling precise sequencing and inrush suppression. Unlike TCR5BMxxA variants, the TCR5BM105,L3F lacks under-voltage lockout (UVLO); its operation is valid only when VIN ≥ VOUT + VDO and VBIAS ≥ VOUT + 1.4 V (min. 2.5 V).

Key Specifications

Pinout & Package

TCR5BM105,L3F is housed in an ultra-small DFN5B package (1.2 mm × 1.2 mm × 0.38 mm, 1.4 mg), with exposed center GND pad for thermal and electrical performance. Pin assignment is confirmed per Toshiba Rev.5.0.A datasheet Figure 6 (top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO regulator applications.

Compared with XC6210B102MR-G and BD3572EFJ-ME2, the TCR5BM105,L3F uniquely delivers 100 mV dropout at full 500 mA load using a dedicated VBIAS rail - enabling longer operational time from aging batteries and greater design margin in space-constrained portable systems.

Availability

TCR5BM105,L3F is available at Aetrix Electronics and suitable for smartphone baseband cores, wearable sensor hubs, IoT edge node MCUs, portable medical monitors, and other applications requiring stable component supply with tight voltage tolerance, ultra-low dropout, and minimal board footprint.

Supply support for TCR5BM105,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management, logic, and memory ICs.

The TCR5BM series targets portable electronics requiring ultra-low-quiescent-current, ultra-low-dropout regulation in sub-2 mm² packages - specifically engineered for battery-powered devices where every microwatt and millivolt matters.

FAQ

What is the dropout voltage specification for TCR5BM105,L3F at 500 mA load?

The TCR5BM105,L3F has a typical dropout voltage of 100 mV at 500 mA output current when VBIAS = 3.3 V and VOUT = 1.05 V. The maximum guaranteed dropout is 140 mV under those conditions. This ultra-low VDO allows the device to regulate down to an input voltage as low as 1.15 V, making it ideal for single-cell lithium battery applications where voltage sags near end-of-discharge.

Does TCR5BM105,L3F include under-voltage lockout (UVLO) functionality?

No, the TCR5BM105,L3F does not include under-voltage lockout. UVLO is only present in TCR5BMxxA variants (e.g., TCR5BM105A). The TCR5BM105,L3F will operate as long as VIN ≥ VOUT + VDO and VBIAS meets its minimum requirement (≥2.5 V or VOUT + 1.4 V), with no built-in VIN monitoring or automatic disable feature.

What are the required external capacitors for stable operation of TCR5BM105,L3F?

For stable operation, the TCR5BM105,L3F requires a minimum 1.0 μF ceramic capacitor on VIN, 2.2 μF ceramic capacitor on VOUT, and 0.1 μF ceramic capacitor on VBIAS. All capacitors must be placed as close as possible to their respective pins; the VOUT capacitor is especially critical for transient response and phase margin.

How does the CONTROL pin function on TCR5BM105,L3F?

The CONTROL pin on TCR5BM105,L3F is an active-high enable input. When pulled to ≥0.9 × VBIAS, the regulator turns ON; when held ≤0.4 V, it disables and activates the auto-discharge path (10 Ω) to rapidly drain VOUT. An internal pull-down ensures safe default-OFF behavior if the pin is left floating or unconnected.

What package type and thermal considerations apply to TCR5BM105,L3F?

The TCR5BM105,L3F uses the DFN5B package (1.2 mm × 1.2 mm × 0.38 mm) with an exposed center GND pad. This pad must be soldered to a PCB thermal pad connected to a solid ground plane to dissipate heat effectively. Without proper thermal land pattern and copper area, power dissipation is limited to ~600 mW - insufficient for continuous 500 mA at high ambient temperatures.