Toshiba Semiconductor and Storage TCR5BM11,L3F

Overview

TCR5BM11,L3F from Toshiba Electronic Devices & Storage Corporation is a 1.1 V fixed-output, 500 mA ultra-low-dropout CMOS voltage regulator with on/off control input, 100 mV typical dropout at full load (VBIAS = 3.3 V), 98 dB ripple rejection at 1 kHz, and integrated thermal shutdown/overcurrent protection - designed for space-constrained portable power rails in cellular phones and wearables.

For engineers reviewing the TCR5BM11,L3F datasheet, TCR5BM11,L3F pinout, TCR5BM11,L3F application, or TCR5BM11,L3F equivalent, this page delivers verified electrical specs, DFN5B package layout guidance, real-world load transient response data, and validated alternative regulators for portable low-voltage biasing circuits requiring <1.2 V output stability and sub-1 μA standby current.

Technical Context

The TCR5BM11,L3F employs a secondary bias rail (VBIAS) to decouple reference generation from VIN, enabling ultra-low dropout while maintaining high PSRR and fast load transient recovery. Its internal architecture includes a precision bandgap reference, error amplifier, and current-limiting circuitry with thermal foldback.

It operates with three independent supply domains: VIN powers the pass element, VBIAS supplies the control logic and reference, and CONTROL enables/disables regulation via TTL-compatible voltage thresholds (VCT(ON) ≥ 0.9 × VBIAS). The device lacks under-voltage lockout (UVO) - confirmed by absence of "A" suffix and omission from TCR5BMxxA product list.

Key Specifications

Pinout & Package

TCR5BM11,L3F is housed in the ultra-compact DFN5B package (1.2 mm × 1.2 mm × 0.38 mm, 1.4 mg), optimized for high-density portable PCBs. Thermal pad (Pin 5) must be soldered to ground plane for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.

Compared with R1190H111B-TR-FE and MCP1826T-1102E/DB, the TCR5BM11,L3F uniquely delivers 100 mV dropout and 98 dB PSRR in a 1.2 mm² DFN5B package using a dedicated VBIAS rail - making it optimal for multi-rail portable systems where input headroom and noise immunity are critical.

Availability

TCR5BM11,L3F is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hub supply, and IoT edge node MCU core applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TCR5BM11,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in power management, logic, and analog ICs.

The TCR5BM series targets portable electronics requiring ultra-small, high-performance LDOs - specifically engineered to replace legacy regulators in space-constrained battery-powered devices like smartphones and wearables.

FAQ

What is the dropout voltage specification for TCR5BM11,L3F at 500 mA load?

The TCR5BM11,L3F has a typical dropout voltage of 100 mV at 500 mA output current when VBIAS = 3.3 V, as specified in the Electrical Characteristics table. Maximum dropout is 140 mV across −40°C to +85°C. This enables operation from as low as 1.2 V input while delivering stable 1.1 V output - critical for extending battery runtime in portable systems. The TCR5BM11,L3F achieves this via its dual-rail architecture separating VBIAS from VIN.

Does TCR5BM11,L3F include under-voltage lockout (UVO)?

No, the TCR5BM11,L3F does not include under-voltage lockout. Only TCR5BMxxA variants (e.g., TCR5BM11A) feature UVO, as explicitly stated in Sections 3 and 9 of the datasheet. The TCR5BM11,L3F part number lacks the "A" suffix and is omitted from the UVO-enabled product list. Its control logic remains functional down to VCT = 0 V, with no VIN threshold enforcement.

What are the required external capacitors for stable operation of TCR5BM11,L3F?

The TCR5BM11,L3F requires three ceramic capacitors: ≥1.0 μF at VIN, ≥2.2 μF at VOUT, and ≥0.1 μF at VBIAS. These values are specified in Section 5 (Operating Ranges) and validated in the Application Note. All capacitors must be placed as close as possible to their respective pins - especially the VOUT capacitor, which must be adjacent to the IC to ensure phase stability and optimal transient response. The TCR5BM11,L3F is optimized for low-ESR ceramics and does not require tantalum or electrolytic types.

How does the VBIAS pin function in TCR5BM11,L3F, and what voltage range is supported?

The VBIAS pin supplies independent power to the TCR5BM11,L3F's internal reference, error amplifier, and control logic - decoupling bias circuitry from the main VIN rail. It accepts 2.5 V to 5.5 V (minimum VBIAS = VOUT + 1.4 V, but ≥2.5 V), enabling ultra-low dropout operation even when VIN approaches VOUT. This architecture allows the TCR5BM11,L3F to maintain regulation with only 100 mV headroom at full load, unlike single-supply LDOs. VBIAS must be bypassed with ≥0.1 μF ceramic capacitor.

What thermal considerations apply to TCR5BM11,L3F in the DFN5B package?

The TCR5BM11,L3F in DFN5B has a maximum power dissipation of 600 mW (at 25°C ambient on specified 4-layer board) and a junction temperature limit of 150°C. Its thermal pad (Pin 5) must be soldered to a PCB ground plane with adequate copper area to achieve rated performance. Derating is required above 25°C ambient - e.g., at 60°C, max continuous current drops to ~350 mA. The TCR5BM11,L3F includes thermal shutdown that activates at ~150°C junction temperature, protecting against sustained overload.