Toshiba Semiconductor and Storage TCR8BM105A,L3F

Overview

TCR8BM105A,L3F from Toshiba Electronic Devices & Storage Corporation is an 800 mA ultra-low-dropout CMOS voltage regulator with fixed 1.05 V output, on/off control input, and under-voltage lockout (UVLO). It delivers 170 mV typical dropout at 800 mA (V_BIAS = 3.3 V), supports ceramic capacitors ≥1.0 μF (C_IN), ≥2.2 μF (C_OUT), and ≥0.1 μF (C_BIAS), and operates across −40 °C to +85 °C for portable power rails in cellular phones and wearables.

For engineers reviewing the TCR8BM105A,L3F datasheet, TCR8BM105A,L3F pinout, TCR8BM105A,L3F application, or TCR8BM105A,L3F equivalent, key selection criteria include its UVLO threshold (0.6–0.75 V), 20 μA typical quiescent bias current (V_BIAS = 5.5 V), ±18 mV output accuracy at 50 mA, 98 dB ripple rejection at 1 kHz, and fast load transient response (±100 mV swing for 1 mA ↔ 800 mA step).

Technical Context

The TCR8BM105A,L3F uses a secondary bias rail (V_BIAS) as reference to achieve ultra-low dropout-enabling stable 1.05 V output even when input is only 1.22 V (V_OUT + V_DO). Its internal architecture integrates thermal shutdown, overcurrent protection (1100 mA typ.), auto-discharge (10 Ω discharge path), and pull-down logic on CONTROL pin.

It requires three external ceramic capacitors and operates within strict bias voltage constraints: V_BIAS must be ≥ (V_OUT + 1.4 V) and ≤ 5.5 V; VIN must stay between (V_OUT + V_DO) and V_BIAS; and CONTROL voltage must be 0–V_BIAS, with defined ON/OFF thresholds (0.9–V_BIAS V and 0–0.4 V respectively).

Key Specifications

Pinout & Package

TCR8BM105A,L3F is housed in the DFN5B package (1.2 mm × 1.2 mm × 0.38 mm, 1.4 mg), featuring a center-exposed GND pad for thermal and electrical performance. The 5-pin top-view layout supports compact, high-density PCB placement in space-constrained portable designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.

Compared with TCR8BM105A,L3F, the XC6210B102MR-G offers smaller footprint but forfeits UVLO and higher dropout limits system minimum input voltage, while the BD70522GUL excels in ultra-low-I_Q but cannot sustain 800 mA loads or provide active output discharge-making TCR8BM105A,L3F optimal for portable systems demanding both high current and robust sequencing control.

Availability

TCR8BM105A,L3F is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, Bluetooth LE audio subsystems, and IoT edge node MCU core supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TCR8BM105A,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized analog and power semiconductors for consumer, industrial, and automotive markets, with emphasis on reliability and integration.

The TCR8BM series targets portable electronics requiring ultra-low-dropout regulation, fast transient response, and minimal board area-specifically addressing power rail needs in cellular phones, wearables, and compact IoT devices.

FAQ

What is the dropout voltage specification for TCR8BM105A,L3F at full load?

The TCR8BM105A,L3F exhibits a typical dropout voltage of 170 mV at 800 mA output current when V_BIAS = 3.3 V and V_OUT = 1.05 V. Its maximum dropout is 240 mV under those conditions, allowing operation from as low as 1.22 V input-critical for extending runtime in battery-powered systems nearing end-of-discharge.

Does TCR8BM105A,L3F include under-voltage lockout, and what is its threshold?

Yes, TCR8BM105A,L3F includes under-voltage lockout (UVLO) as indicated by the "A" suffix in its part number. Its UVLO threshold is specified as 0.6 V (typical) to 0.75 V (max) on the VIN pin, ensuring the device remains disabled until input voltage rises above this range-preventing unstable operation during brownout conditions.

What are the required external capacitors for stable operation of TCR8BM105A,L3F?

TCR8BM105A,L3F requires three ceramic capacitors: ≥1.0 μF at VIN, ≥2.2 μF at VOUT, and ≥0.1 μF at V_BIAS. These values ensure loop stability, transient response, and bias rail decoupling. All can be X5R/X7R MLCCs; placement must be adjacent to respective pins to minimize parasitic inductance.

How does the VBIAS pin function in TCR8BM105A,L3F, and what voltage range is allowed?

The V_BIAS pin supplies a dedicated bias rail that enables the ultra-low-dropout architecture of TCR8BM105A,L3F. It must be ≥(V_OUT + 1.4 V) and ≤5.5 V-so for the 1.05 V output, V_BIAS must be ≥2.45 V. This rail powers internal reference and control circuits independently of VIN, decoupling dropout performance from main input limitations.

What thermal and protection features are integrated into TCR8BM105A,L3F?

TCR8BM105A,L3F integrates thermal shutdown, overcurrent protection (1100 mA typical trip), and auto-discharge (10 Ω discharge path). Thermal shutdown activates at junction temperatures exceeding 150 °C; overcurrent protection limits output during shorts; and auto-discharge rapidly clears VOUT capacitance upon CONTROL deactivation-enhancing system safety and sequencing control.