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Toshiba Semiconductor and Storage TCR8BM105,L3F
- Part No.:
- TCR8BM105,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-XDFN Exposed Pad
- Datasheet:
-
TCR8BM105,L3F.pdf
- Description:
- IC REG LINEAR 1.05V 800MA 5DFNB
- Quantity:
- Payment:
- Shipping:
Inventory:1,269
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Product details
Overview
TCR8BM105,L3F from Toshiba Electronic Devices & Storage Corporation is an 800 mA ultra-low-dropout CMOS linear voltage regulator with fixed 1.05 V output, on/off control input, and secondary bias rail architecture enabling 165 mV typical dropout at full load (VBIAS = 3.3 V). It integrates overcurrent protection, thermal shutdown, auto-discharge, and operates across −40 °C to +85 °C. Designed for space-constrained portable power rails in cellular phones and wearable devices.
For engineers reviewing the TCR8BM105,L3F datasheet, TCR8BM105,L3F pinout, TCR8BM105,L3F application, or TCR8BM105,L3F equivalent, key selection criteria include its 1.05 V fixed output accuracy (±18 mV), 98 dB ripple rejection at 1 kHz, 40 μVrms output noise, fast load transient response (±100 mV step), and DFN5B package compatibility with 1.0 μF input / 2.2 μF output ceramic capacitors.
Technical Context
The TCR8BM105,L3F uses a dual-rail architecture: VIN supplies the pass transistor while VBIAS powers the internal reference and control circuitry, decoupling bias current from load current and enabling ultra-low quiescent operation (20 μA typ. IBIAS(ON)). Its control logic includes integrated pull-down between CONTROL and GND, supporting direct GPIO interfacing without external resistors.
Dropout voltage is tightly specified across temperature and load: 165 mV (typ.) at IOUT = 800 mA, VBIAS = 3.3 V, and remains ≤240 mV (max.) over −40 °C to +85 °C. The device lacks under-voltage lockout (UVOLO) - confirmed by absence of "A" suffix and omission from TCR8BMxxA product list - distinguishing it from pin-compatible TCR8BM105A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Voltage | Fixed 1.05 V ±18 mV (±1.7%); enables precise core logic or memory rail regulation without external feedback. |
| Max Output Current | 800 mA DC; supports high-efficiency power delivery to SoCs, RF transceivers, or sensor hubs in compact layouts. |
| Dropout Voltage | 165 mV (typ.) at 800 mA, VBIAS = 3.3 V; allows operation with minimal headroom (e.g., 1.215 V input for 1.05 V output). |
| Ripple Rejection | 98 dB at 1 kHz; suppresses switching noise from upstream DC-DC converters feeding noisy intermediate rails. |
| Quiescent Current | 20 μA (typ.) at VBIAS = 5.5 V, IOUT = 0 mA; minimizes standby power loss in battery-powered always-on circuits. |
| Output Noise | 40 μVrms (10 Hz–100 kHz); suitable for noise-sensitive analog blocks like ADCs, PLLs, or audio codecs. |
| Thermal Shutdown | Active at TJ ≥ 150 °C; protects against sustained overload or poor PCB thermal design without external monitoring. |
Pinout & Package
TCR8BM105,L3F is housed in the ultra-compact DFN5B package (1.2 mm × 1.2 mm × 0.38 mm, 1.4 mg), optimized for high-density portable PCBs. Thermal performance relies on exposed center GND pad soldering to inner-layer copper planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: VOUT | Regulated output node | Delivers stable 1.05 V; requires ≥2.2 μF ceramic capacitor placed adjacent to pin for stability and transient response. |
| 2: CONTROL | Enable/disable logic input | Active-high (0.9–VBIAS V); internal 0.1 μA pull-down eliminates need for external resistor; supports GPIO direct drive. |
| 3: VIN | Main power input to pass transistor | Supplies load current path; must be ≥ VOUT + VDO; requires ≥1.0 μF ceramic capacitor near pin. |
| 4: VBIAS | Bias supply for internal circuitry | Independent 2.5–5.5 V rail powers reference/control; enables low IQ and fast turn-on; requires ≥0.1 μF capacitor. |
| 5: GND | Power and signal reference | Center-exposed thermal pad; must be soldered to PCB ground plane for thermal dissipation and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low dropout | 165 mV (typ.) at 800 mA enables use with tight-input-voltage rails (e.g., single-cell Li-ion post-DCDC). |
| Dual-rail bias architecture | VBIAS powers control circuitry separately from VIN, isolating quiescent current from load current for consistent low IQ. |
| Auto-discharge function | Internal 10 Ω discharge path rapidly depletes VOUT capacitance when disabled, preventing residual voltage hold-up in sequencing-critical systems. |
| Integrated control pull-down | 0.1 μA internal pull-down ensures reliable OFF-state without external components, simplifying GPIO interface design. |
| High PSRR & low noise | 98 dB ripple rejection + 40 μVrms noise meets requirements for powering RF front-ends and precision analog subsystems. |
Applications
| Smartphone Application Processor Core Rail | Wearable Sensor Hub Power |
|---|---|
Use Scenario: Regulating 1.05 V core supply for ARM Cortex-A series processors during dynamic DVFS transitions. IC Role / Device Role / Timing Role: Primary LDO delivering clean, low-noise power with fast load transient response to maintain processor stability under burst workloads. Use Value: 100 mV load step recovery within microseconds prevents clock domain glitches and maintains real-time task execution integrity. |
Use Scenario: Powering multi-sensor fusion ICs (accelerometer, gyroscope, HRM) in fitness trackers with strict battery life targets. IC Role / Device Role / Timing Role: Always-on LDO supplying regulated 1.05 V to sensor interface logic and embedded MCU during sleep/active cycles. Use Value: 20 μA quiescent current extends battery runtime beyond 7 days per charge while maintaining instant wake-up capability. |
| Bluetooth LE Audio Transceiver Bias | Low-Power IoT Edge Node MCU Core |
Use Scenario: Providing ultra-clean 1.05 V bias to Bluetooth 5.3 LE audio codec and RF synthesizer blocks. IC Role / Device Role / Timing Role: Noise-suppressing LDO filtering switching noise from shared PMIC rails to meet EMI and audio SNR specifications. Use Value: 40 μVrms output noise and 98 dB PSRR ensure <95 dB THD+N in Class-D headphone amplifiers and robust BLE packet decoding. |
Use Scenario: Supplying 1.05 V core voltage to RISC-V microcontrollers in battery-operated environmental sensors deployed for >10-year field life. IC Role / Device Role / Timing Role: High-reliability LDO with thermal shutdown and overcurrent protection ensuring fail-safe operation in unattended deployments. Use Value: −40 °C to +85 °C operating range and 150 °C junction thermal shutdown guarantee continuous operation in outdoor enclosures without active cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Toshiba TCR8BM105A | Includes under-voltage lockout (UVOLO) with 0.6–0.75 V threshold; otherwise identical pinout, electrical specs, and package. | Required where VIN brown-out detection is mandatory before enabling downstream circuitry (e.g., power sequencing in multi-rail systems). | Select TCR8BM105A only if UVOLO functionality is explicitly needed; TCR8BM105,L3F offers lower system complexity where VIN is pre-regulated and stable. |
| Rohm BD3985FVM-C | Fixed 1.0 V output, 800 mA rating, DFNPL-6 package (1.6 × 1.6 mm); 200 mV dropout (typ.), 75 dB PSRR at 1 kHz, no auto-discharge. | Suitable for cost-sensitive designs accepting 1.0 V vs. 1.05 V and relaxed noise/PSRR requirements; lacks auto-discharge and dual-rail architecture. | Choose BD3985FVM-C only for non-critical rails where 50 mV higher dropout and absence of auto-discharge are acceptable trade-offs for procurement flexibility. |
Compared with TCR8BM105A, the TCR8BM105,L3F omits UVOLO for simpler enable control and lower BOM count; versus BD3985FVM-C, it delivers tighter output accuracy, lower noise, superior PSRR, and integrated auto-discharge - critical for sequenced, noise-sensitive, or battery-optimized portable systems.
Availability
TCR8BM105,L3F is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, Bluetooth LE audio subsystems, and low-power IoT edge nodes requiring stable component supply with guaranteed long-term continuity.
Supply support for TCR8BM105,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-performance semiconductor solutions for consumer, industrial, and automotive markets, with expertise in power management, logic, and memory technologies.
The TCR8BM series was developed specifically for ultra-compact, high-efficiency portable electronics, emphasizing ultra-low dropout, minimal quiescent current, and seamless integration into dense mobile PCB layouts.
FAQ
What is the output voltage tolerance of the TCR8BM105,L3F?
The TCR8BM105,L3F provides a fixed 1.05 V output with ±18 mV (±1.7%) accuracy over temperature (−40 °C to +85 °C) and load (50 mA), as specified in the Electrical Characteristics table. This tight tolerance ensures reliable operation of voltage-sensitive digital cores and analog peripherals without external trimming.
Does the TCR8BM105,L3F include under-voltage lockout (UVOLO)?
No, the TCR8BM105,L3F does not include under-voltage lockout. Only TCR8BMxxA variants (e.g., TCR8BM105A) feature UVOLO with 0.6–0.75 V threshold. The TCR8BM105,L3F is designed for applications where VIN is pre-stabilized and sequencing is managed externally.
What are the minimum required capacitors for stable operation of the TCR8BM105,L3F?
Stable operation of the TCR8BM105,L3F requires ≥1.0 μF ceramic capacitor at VIN, ≥2.2 μF ceramic capacitor at VOUT, and ≥0.1 μF ceramic capacitor at VBIAS. All capacitors must be placed as close as possible to their respective pins to minimize parasitic inductance and ensure transient response integrity.
How does the dual-rail architecture of the TCR8BM105,L3F improve efficiency?
The TCR8BM105,L3F separates VIN (pass transistor supply) from VBIAS (reference/control circuitry supply), decoupling quiescent current from load current. This allows 20 μA typical IBIAS(ON) regardless of output load, significantly reducing total system power in light-load or standby conditions compared to single-rail LDOs.
Is the TCR8BM105,L3F pin-compatible with other members of the TCR8BM series?
Yes, all TCR8BM series regulators-including TCR8BM105,L3F-share identical DFN5B pinout (VOUT, CONTROL, VIN, VBIAS, GND), enabling drop-in replacement across output voltages (0.8 V to 3.6 V) and variants (e.g., TCR8BM105A), provided board layout accommodates marking and functional differences like UVOLO.
TCR8BM105,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- TCR8BM
- Package/Case:
- 4-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 1.05V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.24V @ 800mA
- Current - Output:
- 800mA
- Current - Quiescent (Iq):
- 36 µA
- Current - Supply (Max):
- -
- PSRR:
- 98dB (1kHz)
- Control Features:
- Current Limit, Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFNB (1.2x1.2)
TCR8BM105,L3F FAQ
1.How can I place an order for TCR8BM105,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR8BM105,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR8BM105,L3F reliable?
The price and inventory of TCR8BM105,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR8BM105,L3F is usually 5 days.
3.What payment methods are accepted for TCR8BM105,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR8BM105,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR8BM105,L3F?
TCR8BM105,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR8BM105,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR8BM105,L3F?
For technical support, including TCR8BM105,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR8BM105,L3F requirements.
6.How does Aetrix verify that TCR8BM105,L3F is sourced from the original manufacturer or authorized distributors?
All TCR8BM105,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR8BM105,L3F meets industry standards.
7.What is the process for return or replacement of TCR8BM105,L3F?
All TCR8BM105,L3F units undergo pre-shipment inspection (PSI). If there is an issue with TCR8BM105,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR8BM105,L3F part is unused and in its original packaging.
Return procedure for TCR8BM105,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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