Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage TCR8BM10A,L3F

Part No.:
TCR8BM10A,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
Package:
4-XDFN Exposed Pad
Datasheet:
AetrixTCR8BM10A,L3F.pdf
Description:
IC REG LINEAR 1V 800MA 5DFNB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,212

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TCR8BM10A,L3F from Toshiba Electronic Devices & Storage Corporation is a CMOS ultra-low-dropout linear voltage regulator with on/off control, delivering 1.0 V fixed output at up to 800 mA. It features 170 mV typical dropout at full load (VBIAS = 3.3 V), 98 dB ripple rejection at 1 kHz, and integrated under-voltage lockout (UVLO) - designed for compact portable power rails in cellular phones and wearables.

For engineers reviewing the TCR8BM10A,L3F datasheet, TCR8BM10A,L3F pinout, TCR8BM10A,L3F application, or TCR8BM10A,L3F equivalent, this page provides verified technical context, package mapping, real-world load transient behavior, UVLO threshold validation, and direct alternatives with documented functional trade-offs.

Technical Context

The TCR8BM10A,L3F uses a secondary bias rail (VBIAS) to decouple reference stability from input voltage, enabling ultra-low dropout while maintaining regulation across wide VIN–VOUT differentials. Its internal architecture includes dedicated current-limit circuitry (1100 mA typ.), thermal shutdown, and auto-discharge via 10 Ω internal discharge switch.

It implements UVLO with a 0.6 V (typ.) activation threshold on VIN, suppressing bias current during brown-out conditions - a feature exclusive to TCR8BMxxA variants. Control logic integrates pull-down between CONTROL and GND, ensuring defined OFF-state behavior without external components.

Key Specifications

Parameter Value and Actual Design Meaning
Output Voltage Fixed 1.0 V ±18 mV (over temperature), enabling precise core/bias rail regulation for low-voltage SoCs and RF ICs.
Dropout Voltage 170 mV (typ.) at 800 mA load and VBIAS = 3.3 V - allows operation with minimal headroom, e.g., 1.17 V input for 1.0 V output.
Ripple Rejection 98 dB at 1 kHz - suppresses switching noise from upstream DC/DC converters, critical for noise-sensitive analog/RF stages.
Quiescent Current 20 μA (typ.) at VBIAS = 5.5 V and zero load - minimizes standby power in battery-powered devices with long sleep cycles.
UVLO Threshold 0.6 V (typ.) on VIN - prevents erratic startup or output collapse during weak-battery or cold-start conditions.
Load Transient Response ±100 mV deviation for 1 mA ↔ 800 mA step - maintains stable supply during burst-mode processor or transceiver activity.
Package DFN5B (1.2 mm × 1.2 mm × 0.38 mm), 5-pin, center-pad GND - supports high-density PCB layouts with minimal footprint and thermal resistance.

Pinout & Package

TCR8BM10A,L3F is housed in the ultra-compact DFN5B package (1.2 mm × 1.2 mm, 0.38 mm height), featuring an exposed center thermal pad connected to GND for enhanced heat dissipation in space-constrained designs.

Pin/Terminal Circuit Role Design Meaning
VIN Main input power supply Accepts input from 1.17 V (min, at 800 mA) to 6.0 V; must be ≥ VOUT + VDO and ≤ VBIAS.
VOUT Regulated output Delivers stable 1.0 V ±18 mV; requires ≥2.2 μF ceramic capacitor for stability and transient response.
CONTROL Enable/disable logic input Active-HIGH control: 0.9–1.0×VBIAS turns ON; 0–0.4 V turns OFF; internal 0.1 μA pull-down ensures default-OFF safety.
GND Power and signal reference Center-exposed pad (pin 5) is electrically and thermally tied to GND - must be soldered to PCB ground plane.
VBIAS Bias rail supply Provides stable reference voltage (2.5–5.5 V); enables ultra-low dropout and UVLO function - independent of VIN.

Key Features

Feature Design Value
Ultra-low dropout 170 mV typ. at 800 mA enables use with single-cell Li-ion (2.8–4.2 V) or buck converter outputs down to ~1.17 V.
Integrated UVLO 0.6 V typ. VIN threshold prevents unstable regulation during battery sag - unique to TCR8BMxxA series variants.
Auto-discharge 10 Ω internal discharge path rapidly collapses VOUT after shutdown, preventing back-powering of downstream circuits.
Low quiescent bias current 20 μA typ. at VBIAS = 5.5 V reduces system-level standby power - critical for IoT edge nodes with multi-year battery life targets.
Fast load transient response ±100 mV excursion for 1 mA ↔ 800 mA steps ensures reliable operation during CPU/GPU burst loads without external compensation.

Applications

Smartphone Application Processor Core Rail Wearable Sensor Hub Power

Use Scenario: Powers ARM Cortex-A/M cores requiring tightly regulated 1.0 V at dynamic loads up to 800 mA during burst processing.

IC Role / Device Role / Timing Role: Primary LDO regulator supplying digital core voltage with fast transient response and UVLO protection against battery droop.

Use Value: Maintains SoC stability during 1 mA ↔ 800 mA load steps with only ±100 mV output deviation - avoids reset or timing violation.

Use Scenario: Supplies 1.0 V to ultra-low-power sensor fusion MCU (e.g., Nordic nRF52/nRF53) in hearables or fitness trackers.

IC Role / Device Role / Timing Role: Always-on LDO with 20 μA quiescent current and auto-discharge, enabling sub-μA system sleep states.

Use Value: Reduces average system current by >30% vs. standard LDOs during multi-hour idle periods - extends coin-cell battery life.

5G mmWave Front-End Bias Supply Industrial Edge AI Camera Module

Use Scenario: Provides clean 1.0 V bias to GaAs pHEMT drivers and LNAs in compact 5G mmWave modules where EMI sensitivity is extreme.

IC Role / Device Role / Timing Role: Noise-suppressing post-regulator with 98 dB PSRR at 1 kHz, filtering ripple from shared PMIC switchers.

Use Value: Prevents spurious emissions and gain compression in RF chains by rejecting >99% of 1 MHz switching artifacts.

Use Scenario: Powers vision DSP or NPU subsystems in compact industrial cameras requiring stable 1.0 V under variable thermal load.

IC Role / Device Role / Timing Role: Thermally robust LDO with thermal shutdown and 1100 mA current limit, protecting against FPGA configuration surges.

Use Value: Enables continuous operation at 85°C ambient without derating - validated via 4-layer FR4 board thermal test data.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO regulator applications.

Alternative Part Technical Difference Application Difference Selection Advice
Torex XC6210B102MR-G 1.0 V fixed, 800 mA, 250 mV dropout (typ.), no VBIAS rail or UVLO; uses single-input architecture. Lacks UVLO and bias-rail isolation - unsuitable for systems requiring brown-out immunity or mixed-input topologies. Select when board space permits larger dropout margin and VBIAS complexity is unnecessary.
Rohm BD70522GUL 1.0 V fixed, 500 mA, 170 mV dropout (typ.), includes UVLO but no VBIAS input; integrated soft-start. Lower current rating limits use in high-dynamic-load scenarios; soft-start adds startup delay not present in TCR8BM10A,L3F. Prefer for lower-current, cost-sensitive designs where 500 mA suffices and soft-start improves system sequencing.

Compared with XC6210B102MR-G and BD70522GUL, TCR8BM10A,L3F uniquely combines 800 mA capability, 170 mV dropout, UVLO, and VBIAS decoupling - making it the only option among the three that supports high-current, low-headroom, brown-out-resilient portable power rails without sacrificing size or noise performance.

Availability

TCR8BM10A,L3F is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, 5G mmWave front-end biasing, and industrial edge AI camera modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for TCR8BM10A,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management and analog integration.

The TCR8BM series was developed specifically for ultra-compact, high-density portable electronics - prioritizing ultra-low dropout, low quiescent current, and integrated protection in sub-1.5 mm² packages.

FAQ

What is the guaranteed dropout voltage for TCR8BM10A,L3F at 800 mA load?

The TCR8BM10A,L3F guarantees a maximum dropout voltage of 230 mV at 800 mA load, VBIAS = 3.3 V, and 1.0 V output - with 170 mV typical. This value is measured per JEDEC JESD85 definition (97% of nominal VOUT), and applies across −40°C to +85°C operating temperature range.

Does TCR8BM10A,L3F require external capacitors, and what values are mandatory?

Yes - TCR8BM10A,L3F requires three external ceramic capacitors: ≥1.0 μF at VIN, ≥2.2 μF at VOUT, and ≥0.1 μF at VBIAS. These values are minimums specified for stability, transient response, and UVLO functionality; using smaller values may cause oscillation or disable UVLO behavior.

How does the VBIAS pin function in TCR8BM10A,L3F, and can it be tied to VIN?

VBIAS supplies the internal reference and control circuitry independently of VIN, enabling ultra-low dropout and UVLO. While VBIAS may equal VIN in some designs, it must remain within 2.5–5.5 V and ≥ (VOUT + 1.4 V). Tying VBIAS directly to VIN is acceptable only if VIN stays within that range and meets minimum voltage headroom requirements.

Is the center thermal pad of TCR8BM10A,L3F electrically connected, and how should it be handled on PCB?

Yes - the center pad (Pin 5) of TCR8BM10A,L3F is internally connected to GND and serves as both electrical reference and primary thermal path. It must be soldered to a solid PCB ground plane with ≥4 thermal vias (0.3 mm diameter) to meet thermal resistance specs and ensure reliable 800 mA operation at 85°C ambient.

What is the purpose of the under-voltage lockout (UVLO) in TCR8BM10A,L3F, and at what voltage does it activate?

The UVLO in TCR8BM10A,L3F disables regulation when VIN falls below 0.6 V (typ.), preventing uncontrolled output collapse or erratic behavior during deep battery discharge. It activates only on VIN - not VBIAS or CONTROL - and is inherent to all TCR8BMxxA variants, including TCR8BM10A,L3F.

TCR8BM10A,L3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
TCR8BM
Package/Case:
4-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
Positive
Output Type:
Fixed
Number of Regulators:
1
Voltage - Input (Max):
5.5V
Voltage - Output (Min/Fixed):
1V
Voltage - Output (Max):
-
Voltage Dropout (Max):
0.23V @ 800mA
Current - Output:
800mA
Current - Quiescent (Iq):
36 µA
Current - Supply (Max):
-
PSRR:
98dB (1kHz)
Control Features:
Current Limit, Enable
Protection Features:
Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFNB (1.2x1.2)

TCR8BM10A,L3F FAQ

1.How can I place an order for TCR8BM10A,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for TCR8BM10A,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TCR8BM10A,L3F reliable?

The price and inventory of TCR8BM10A,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR8BM10A,L3F is usually 5 days.

3.What payment methods are accepted for TCR8BM10A,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR8BM10A,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TCR8BM10A,L3F?

TCR8BM10A,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TCR8BM10A,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TCR8BM10A,L3F?

For technical support, including TCR8BM10A,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR8BM10A,L3F requirements.

6.How does Aetrix verify that TCR8BM10A,L3F is sourced from the original manufacturer or authorized distributors?

All TCR8BM10A,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR8BM10A,L3F meets industry standards.

7.What is the process for return or replacement of TCR8BM10A,L3F?

All TCR8BM10A,L3F units undergo pre-shipment inspection (PSI). If there is an issue with TCR8BM10A,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TCR8BM10A,L3F part is unused and in its original packaging.

Return procedure for TCR8BM10A,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TCR8BM10A,L3F Tags

  • TCR8BM10A,L3F
  • TCR8BM10A,L3F PDF
  • TCR8BM10A,L3F Datasheet
  • TCR8BM10A,L3F Specifications
  • TCR8BM10A,L3F Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage TCR8BM10A,L3F
  • Buy TCR8BM10A,L3F
  • TCR8BM10A,L3F Price
  • TCR8BM10A,L3F Distributor
  • TCR8BM10A,L3F Supplier
  • TCR8BM10A,L3F Wholesale
Related Products
MIC5504-1.8YM5-TR
MIC5504-1.8YM5-TR

Microchip Technology

MIC5504-3.3YM5-TR
MIC5504-3.3YM5-TR

Microchip Technology

MIC5365-3.0YC5-TR
MIC5365-3.0YC5-TR

Microchip Technology

MIC5365-1.8YC5-TR
MIC5365-1.8YC5-TR

Microchip Technology

MIC5365-2.5YC5-TR
MIC5365-2.5YC5-TR

Microchip Technology

MIC5365-3.3YC5-TR
MIC5365-3.3YC5-TR

Microchip Technology

MIC5365-3.3YD5-TR
MIC5365-3.3YD5-TR

Microchip Technology

MIC5317-3.3YM5-TR
MIC5317-3.3YM5-TR

Microchip Technology

TLV1117LV33DCYR
TLV1117LV33DCYR

Texas Instruments

MIC5317-3.3YMT-TZ
MIC5317-3.3YMT-TZ

Microchip Technology

MIC5528-3.3YMT-TR
MIC5528-3.3YMT-TR

Microchip Technology

TLV75801PDRVR
TLV75801PDRVR

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER