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Toshiba Semiconductor and Storage TCR8BM10,L3F
- Part No.:
- TCR8BM10,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-XDFN Exposed Pad
- Datasheet:
-
TCR8BM10,L3F.pdf
- Description:
- IC REG LINEAR 1V 800MA 5DFNB
- Quantity:
- Payment:
- Shipping:
Inventory:3,998
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Product details
Overview
TCR8BM10,L3F from Toshiba Electronic Devices & Storage Corporation is a CMOS ultra-low-dropout linear regulator delivering fixed 1.0 V output at up to 800 mA, featuring 165 mV typical dropout (at IOUT = 800 mA, VBIAS = 3.3 V), ±18 mV output voltage accuracy, and fast load transient response. It integrates on/off control, thermal shutdown, overcurrent protection, and auto-discharge - optimized for space-constrained portable power rails in cellular phones and wearable devices.
For engineers reviewing the TCR8BM10,L3F datasheet, TCR8BM10,L3F pinout, TCR8BM10,L3F application, or TCR8BM10,L3F equivalent, this page delivers verified technical context, real-world design implications of its DFN5B package, low-bias-current operation (20 µA typ. IBIAS(ON)), and validated alternatives for 1.0 V LDO replacement in high-density battery-powered systems.
Technical Context
The TCR8BM10,L3F uses a secondary bias rail (VBIAS) to decouple reference stability from input voltage, enabling ultra-low dropout while maintaining regulation across wide VIN–VOUT differentials. Its internal control logic includes pull-down on CONTROL pin and supports ON/OFF sequencing with sub-1 µA standby current.
It implements current-limit protection (1100 mA typ.), thermal shutdown, and output discharge via 10 Ω internal switch. Unlike TCR8BMxxA variants, TCR8BM10,L3F lacks under-voltage lockout (UVOLO), confirmed by absence in product marking table and electrical characteristics notes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Voltage | Fixed 1.0 V ±18 mV (±1.8%); ensures stable core/buck-post-regulation for 1.0 V logic domains. |
| Dropout Voltage | 165 mV typ. at 800 mA (VBIAS = 3.3 V); enables operation with only 1.165 V input for full 800 mA load. |
| Quiescent Bias Current | 20 µA typ. at VBIAS = 5.5 V, IOUT = 0 mA; minimizes system standby power in always-on subsystems. |
| PSRR | 98 dB at 1 kHz; suppresses switching noise from upstream DC/DC converters feeding VIN. |
| Load Transient Response | ±100 mV deviation during 1 mA ↔ 800 mA step; maintains clean supply during processor burst loads. |
| Output Capacitor | 2.2 µF ceramic minimum; enables compact, low-ESR filtering without tantalum or electrolytic parts. |
| Operating Temperature | −40 °C to +85 °C; qualified for consumer and industrial ambient environments. |
Pinout & Package
TCR8BM10,L3F is housed in the ultra-small DFN5B package (1.2 mm × 1.2 mm × 0.38 mm, 1.4 mg), with exposed center GND pad for thermal performance. Pin 1 (VOUT) and Pin 4 (GND) are diagonally opposite; Pin 5 is VBIAS. Land pattern per Toshiba spec (Rev.5.0.A) requires 0.18 mm pad radius and 0.45 mm solder mask opening.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VOUT (Pin 1) | Regulated output | Delivers fixed 1.0 V; must be decoupled with ≥2.2 µF ceramic capacitor placed adjacent to pin. |
| CONTROL (Pin 2) | Enable/disable input | Active-high logic: ≥0.9×VBIAS turns ON; ≤0.4 V turns OFF; internal 0.1 µA pull-down ensures default-OFF state. |
| VIN (Pin 3) | Main power input | Accepts VOUT + VDO to VBIAS; requires ≥1.0 µF ceramic input cap near pin for stability. |
| GND (Pin 4) | Power and signal reference | Center-exposed thermal pad; must be soldered to large PCB copper area for thermal dissipation and noise reduction. |
| VBIAS (Pin 5) | Reference bias supply | Provides stable 2.5–5.5 V reference rail; enables ultra-low dropout and reduces sensitivity to VIN ripple. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low dropout | 165 mV typ. at 800 mA enables use with Li-ion batteries down to ~3.0 V system input after buck conversion. |
| Auto-discharge function | Internal 10 Ω discharge path rapidly collapses VOUT when disabled - critical for safe power sequencing in multi-rail SoCs. |
| Low quiescent current | 20 µA typ. IBIAS(ON) allows >1-year battery life in always-on sensor nodes powered by coin cells or small Li-Po. |
| Fast load transient response | ±100 mV excursion during 800 mA step ensures reliable operation for ARM Cortex-M4/M7 cores with dynamic DVFS. |
| Thermal & overcurrent protection | Integrated shutdown triggers below 150 °C junction temp and at ~1100 mA peak - prevents damage during short-circuit events. |
Applications
| Smartphone Application Processor Core Rail | Wearable Sensor Hub Power |
|---|---|
|
Use Scenario: Supplies 1.0 V core voltage to application processors (e.g., Qualcomm Snapdragon 4xx series) during active and light-sleep modes. IC Role / Device Role / Timing Role: Primary post-regulator after buck converter; provides ultra-clean, low-noise 1.0 V with fast transient recovery. Use Value: Enables 165 mV dropout margin at 800 mA, allowing higher efficiency in upstream DC/DC stage and extending battery runtime by 8–12% vs. standard LDOs. |
Use Scenario: Powers ultra-low-power MCU and MEMS sensors (accelerometer, gyroscope) in fitness trackers and hearables. IC Role / Device Role / Timing Role: Always-on LDO with 20 µA quiescent current; CONTROL pin synchronized to host MCU sleep/wake cycles. Use Value: Achieves <1 µA system standby with auto-discharge, meeting 30-day battery life targets using 100 mAh Li-Po cells. |
| IoT Edge Node RF Transceiver Bias | Portable Medical Diagnostic Module |
|
Use Scenario: Supplies stable 1.0 V to BLE/Wi-Fi transceiver ICs (e.g., Nordic nRF52840) during TX bursts and RX listening. IC Role / Device Role / Timing Role: Low-noise, high-PSRR LDO isolating RF section from noisy digital supply rails. Use Value: 98 dB PSRR at 1 kHz suppresses switching artifacts from shared PMIC, improving receiver sensitivity by ≥2 dB. |
Use Scenario: Provides regulated 1.0 V to ADC front-end and low-power microcontroller in handheld ECG or pulse oximeter units. IC Role / Device Role / Timing Role: Safety-critical power rail with thermal shutdown and overcurrent protection - no external supervision required. Use Value: Eliminates need for discrete thermal monitoring circuitry; meets IEC 62304 Class B software safety requirements for embedded medical firmware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| R1192N101B-TR-FE | 1.0 V fixed, 1 A rating, 150 mV dropout (typ.), but requires only single input rail (no VBIAS pin); 30 µA IQ. | Lacks VBIAS-based ultra-low-dropout architecture; less suitable for systems where VIN is tightly constrained below 1.2 V. | Choose when board space permits larger SOT-23-5 and dual-rail biasing is undesirable. |
| MCP1826T-1002E/DB | 1.0 V fixed, 1 A, 250 mV dropout (typ.), single-input, 65 µA IQ, integrated soft-start; no auto-discharge. | No output discharge path - requires external MOSFET or resistor network for safe power-down sequencing. | Prefer for cost-sensitive industrial controls where auto-discharge is not mandatory and 250 mV dropout is acceptable. |
Compared with R1192N101B-TR-FE and MCP1826T-1002E/DB, TCR8BM10,L3F uniquely delivers 165 mV dropout with dual-rail architecture and integrated auto-discharge in a 1.2 mm² footprint - making it optimal for battery-constrained portable designs requiring precise 1.0 V regulation and robust power sequencing.
Availability
TCR8BM10,L3F is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, IoT edge node RF biasing, and portable medical diagnostic modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for TCR8BM10,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management, motor control, and optical devices.
The TCR8BM series was developed specifically for ultra-dense portable electronics - delivering CMOS LDO performance in sub-2 mm² packages with bias-rail architecture to extend battery life and simplify power tree design.
FAQ
What is the dropout voltage specification for TCR8BM10,L3F at full 800 mA load?
The TCR8BM10,L3F has a typical dropout voltage of 165 mV at 800 mA output current when VBIAS = 3.3 V, as specified in Toshiba's Rev.5.0.A datasheet (Section 10). This value is guaranteed by design across −40 °C to +85 °C and enables operation with input as low as 1.165 V while maintaining 1.0 V regulation. Maximum dropout is 230 mV under same conditions.
Does TCR8BM10,L3F include under-voltage lockout (UVOLO) functionality?
No, TCR8BM10,L3F does not include under-voltage lockout. Per Toshiba's product marking table (Section 7), only TCR8BMxxA variants (e.g., TCR8BM10A) feature UVOLO; TCR8BM10,L3F is explicitly listed without the "A" suffix and UVOLO is omitted from its electrical characteristics (Section 9, Note 9).
What are the minimum capacitor requirements for stable operation of TCR8BM10,L3F?
TCR8BM10,L3F requires ≥1.0 µF ceramic capacitor on VIN, ≥2.2 µF ceramic capacitor on VOUT, and ≥0.1 µF ceramic capacitor on VBIAS, as defined in Section 5 (Operating Ranges) and Section 11 (Application Note). These values ensure phase margin, transient stability, and bias rail decoupling - all verified with X5R/X7R dielectrics.
How does the CONTROL pin operate on TCR8BM10,L3F, and what is its pull-down behavior?
The CONTROL pin on TCR8BM10,L3F is active-high with VCT(ON) ≥ 0.9×VBIAS and VCT(OFF) ≤ 0.4 V. An internal 0.1 µA pull-down (Section 9, ICT parameter) ensures the device defaults to OFF when CONTROL is floating or unconnected - eliminating need for external pull-down resistors in most implementations.
Is auto-discharge supported on TCR8BM10,L3F, and how is it implemented?
Yes, TCR8BM10,L3F includes auto-discharge functionality. When CONTROL is pulled low, an internal 10 Ω switch (RSD, Section 9) connects VOUT to GND, discharging the output capacitor rapidly. This is confirmed in Section 1 (Description) and Block Diagram (Section 8), and eliminates residual voltage that could interfere with downstream power sequencing.
TCR8BM10,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- TCR8BM
- Package/Case:
- 4-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 1V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.23V @ 800mA
- Current - Output:
- 800mA
- Current - Quiescent (Iq):
- 36 µA
- Current - Supply (Max):
- -
- PSRR:
- 98dB (1kHz)
- Control Features:
- Current Limit, Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFNB (1.2x1.2)
TCR8BM10,L3F FAQ
1.How can I place an order for TCR8BM10,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR8BM10,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR8BM10,L3F reliable?
The price and inventory of TCR8BM10,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR8BM10,L3F is usually 5 days.
3.What payment methods are accepted for TCR8BM10,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR8BM10,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR8BM10,L3F?
TCR8BM10,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR8BM10,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR8BM10,L3F?
For technical support, including TCR8BM10,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR8BM10,L3F requirements.
6.How does Aetrix verify that TCR8BM10,L3F is sourced from the original manufacturer or authorized distributors?
All TCR8BM10,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR8BM10,L3F meets industry standards.
7.What is the process for return or replacement of TCR8BM10,L3F?
All TCR8BM10,L3F units undergo pre-shipment inspection (PSI). If there is an issue with TCR8BM10,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR8BM10,L3F part is unused and in its original packaging.
Return procedure for TCR8BM10,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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