Toshiba Semiconductor and Storage TCR8BM11,L3F

Overview

TCR8BM11,L3F from Toshiba Electronic Devices & Storage Corporation is an 800 mA ultra-low-dropout CMOS voltage regulator with fixed 1.1 V output, on/off control input, and secondary bias rail architecture enabling 170 mV typical dropout at full load (VBIAS = 3.3 V). It integrates overcurrent protection, thermal shutdown, auto-discharge, and operates across −40 °C to +85 °C for portable power rails in space-constrained applications.

For engineers reviewing the TCR8BM11,L3F datasheet, TCR8BM11,L3F pinout, TCR8BM11,L3F application, or TCR8BM11,L3F equivalent, key selection criteria include dropout performance under bias-voltage constraints, fast load transient response (±100 mV), PSRR of 98 dB at 1 kHz, low quiescent current (20 μA typ. in ON state), and compatibility with small ceramic capacitors (CIN ≥ 1.0 μF, COUT ≥ 2.2 μF).

Technical Context

The TCR8BM11,L3F employs a dual-rail architecture: VIN supplies the main pass element while VBIAS powers the internal reference and control circuitry, decoupling regulation stability from input voltage fluctuations. This enables stable operation even when VIN approaches VOUT + VDO.

Its control logic includes integrated pull-down between CONTROL and GND, defined ON/OFF thresholds (VCT(ON) ≥ 0.9 × VBIAS; VCT(OFF) ≤ 0.4 V), and fast turn-on/turn-off response (tON/tOFF < 50 µs). The device lacks under-voltage lockout (UVOLO), as confirmed by product marking "TCR8BM11" (non-"A" suffix) and absence of UVOLO specification in electrical characteristics tables.

Key Specifications

Pinout & Package

TCR8BM11,L3F is housed in the ultra-compact DFN5B package (1.2 mm × 1.2 mm, 0.38 mm profile), featuring five terminals with exposed center GND pad for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO regulator applications.

Compared with XC6210B112MR-G and BD3572EFJ-ME2, the TCR8BM11,L3F delivers superior dropout performance (170 mV vs. ≥200 mV) and smaller footprint (1.44 mm² vs. ≥11.2 mm²), enabling longer battery runtime and denser layouts - but requires careful VBIAS rail design and lacks UVOLO.

Availability

TCR8BM11,L3F is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, IoT edge node RF biasing, and portable medical diagnostic modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for TCR8BM11,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor solutions, with expertise in power management, logic, memory, and discrete devices for consumer, industrial, and automotive markets.

The TCR8BM series targets portable electronics requiring ultra-small, high-efficiency LDOs - specifically engineered to deliver sub-200 mV dropout, fast transient response, and minimal quiescent current in DFN5B packaging.

FAQ

What is the dropout voltage specification for TCR8BM11,L3F at full 800 mA load?

The TCR8BM11,L3F has a typical dropout voltage of 170 mV at 800 mA output current when VBIAS = 3.3 V and VOUT = 1.1 V. Its maximum dropout is specified as 245 mV under those same conditions, ensuring reliable operation down to VIN = 1.27 V. This ultra-low dropout is achieved via the dedicated VBIAS rail architecture, which isolates the reference circuitry from VIN variations.

Does TCR8BM11,L3F include under-voltage lockout (UVOLO) functionality?

No, the TCR8BM11,L3F does not include under-voltage lockout. Per Toshiba's product numbering scheme, only parts suffixed with "A" (e.g., TCR8BM11A) incorporate UVOLO. The TCR8BM11,L3F is explicitly listed in the "Products Number" table without the "A" suffix and omits UVOLO parameters (e.g., VUVLO) from its Electrical Characteristics table, confirming its absence.

What are the required external capacitors for stable operation of TCR8BM11,L3F?

The TCR8BM11,L3F requires three ceramic capacitors: ≥1.0 μF at VIN, ≥2.2 μF at VOUT, and ≥0.1 μF at VBIAS. All must be placed as close as possible to their respective pins, with the VOUT capacitor adjacent to the IC to minimize loop inductance. These values ensure stability, transient response, and noise suppression per Toshiba's application note and absolute maximum ratings.

How does the CONTROL pin operate on TCR8BM11,L3F, and what is its default state?

The CONTROL pin on TCR8BM11,L3F is active-high: applying ≥0.9 × VBIAS enables regulation, while ≤0.4 V disables it. An internal 0.1 μA pull-down connects CONTROL to GND, ensuring the device remains OFF at power-up unless actively driven high. This eliminates the need for external pull-down resistors and prevents unintended startup during bias rail sequencing.

What thermal considerations apply to TCR8BM11,L3F in high-current operation?

The TCR8BM11,L3F features thermal shutdown at TJ = 150 °C and is rated for 600 mW power dissipation on a standard 4-layer FR4 board (40 mm × 40 mm, 70% copper coverage). To avoid triggering shutdown at 800 mA, ensure the exposed GND pad is fully soldered to a thermal plane. Derating is recommended above +60 °C ambient, and permissible loss should be limited to 70–80% of absolute maximum ratings per Toshiba's reliability guidelines.