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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies TDA21106

Name: TDA21106
Brand: Infineon Technologies
SKU: TDA21106
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TDA21106

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: TDA21106.pdf

Description:: IC GATE DRVR HALF-BRIDGE DSO8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TDA21106 from Infineon Technologies is a dual high-speed N-channel MOSFET gate driver for synchronous half-bridge topologies, featuring 4 A peak sink/source capability per output, 20–35 ns propagation delays (HS), and adjustable high-side gate drive voltage (6–13.2 V) via PVCC pin. It integrates a bootstrap diode, supports 2 MHz switching, and targets multi-phase CPU VRMs on desktop motherboards.

For engineers reviewing the TDA21106 datasheet, TDA21106 pinout, TDA21106 application, or TDA21106 equivalent, key selection criteria include bootstrap-enabled floating high-side drive, adaptive cross-conduction prevention, shutdown-mode quiescent current optimization, and footprint compatibility with TDA21101G and HIP6601B in P-DSO-8 packages.

Technical Context

The TDA21106 implements adaptive gate drive control to prevent shoot-through by dynamically adjusting turn-on/turn-off timing based on PHASE node voltage transitions. Its integrated bootstrap diode eliminates an external component while enabling high-side drive up to 45 V referenced to GND.

It operates with separate supply rails: VCC powers logic and low-side driver (10.8–13.2 V), while PVCC independently sets high-side gate voltage (6–13.2 V), allowing independent optimization of conduction and switching losses in high-frequency synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
Max switching frequency	2 MHz - enables compact magnetics and high-density VRM designs for modern CPUs
Peak output current	4 A sink/source - drives high-Qg MOSFETs with fast edge rates and minimal gate resistance
HS propagation delay	20–35 ns (25 °C) - ensures tight timing control in multi-phase interleaved converters
HS gate drive voltage range	6–13.2 V via PVCC - allows trade-off between R_DS(on) loss and gate charge loss
PHASE node voltage rating	−20 V to +30 V (pulsed) - supports robust operation during hard-switching transients
UVLO thresholds	V_VCC rising: 10.1 V, falling: 7.6 V - prevents erratic operation during brown-out conditions
Shutdown input window	1.7–3.1 V on PWM pin - enables clean three-state disable without external logic

Pinout & Package

P-DSO-8 package (3.9 × 4.9 mm, 1.27 mm pitch), thermally enhanced with exposed pad (not electrically connected per datasheet), RoHS-compliant, JEDEC MS-012AC compliant footprint.

Pin/Terminal	Circuit Role	Design Meaning
GATEHS (Pin 1)	High-side gate driver output	Drives N-channel MOSFET gate referenced to PHASE node; rated for −3.5 V to V_BOOT+0.3 V
BOOT (Pin 2)	Bootstrap capacitor connection	Floating supply rail for HS driver; referenced to PHASE, not GND; requires external 0.1 µF ceramic
PWM (Pin 3)	Control input	CMOS-compatible enable/disable signal; 3-state capable; defines active-high gate timing
GND (Pin 4)	Power and signal reference	Common return for VCC, GATELS, and logic; must be low-inductance path to minimize noise coupling
GATELS (Pin 5)	Low-side gate driver output	Drives N-channel MOSFET gate referenced to GND; 0.9–1.3 Ω typical sink/source impedance
VCC (Pin 6)	Logic & LS driver supply	10.8–13.2 V input powering internal logic, level shifters, and low-side driver stage
PVCC (Pin 7)	HS gate drive voltage adjust	Externally set voltage (6–13.2 V) defining high-side gate overdrive; decoupled with local 100 nF
PHASE (Pin 8)	Half-bridge switch node	Connects to source of HS MOSFET and drain of LS MOSFET; withstands −20 V to +30 V pulsed stress

Key Features

Feature	Design Value
Integrated bootstrap diode	Eliminates external diode, reducing BOM count and PCB area in compact VRM layouts
Adaptive cross-conduction prevention	Dynamically extends dead-time during fast PHASE transitions to avoid shoot-through
Three-state shutdown mode	Reduces quiescent current to <100 µA when PWM input held in 1.7–3.1 V window
Footprint compatibility	Pin-to-pin matches TDA21101G and HIP6601B, enabling drop-in upgrade paths in legacy designs
High-voltage PHASE rating	Withstands −20 V undershoot and +30 V overshoot pulses (500 ns, 2% duty), critical for hard-switching reliability

Applications

Desktop CPU VRM

Multi-phase DC/DC Converter

Use Scenario: Power delivery for Intel/AMD desktop processors requiring >100 A at <1.5 V with tight transient response.

IC Role / Device Role / Timing Role: Dual gate driver controlling parallel high-side/low-side N-MOSFET pairs per phase in interleaved buck topology.

Use Value: 2 MHz capability and 4 A drive strength enable smaller inductors and faster load-step response versus 500 kHz alternatives.

Use Scenario: High-efficiency point-of-load regulator in telecom baseband cards with space constraints.

IC Role / Device Role / Timing Role: Synchronous half-bridge driver in 3-phase 48 V–12 V intermediate bus converter.

Use Value: Adjustable PVCC (6–13.2 V) optimizes gate drive for both high-R_DS(on) primary-side and low-R_DS(on) secondary-side MOSFETs.

Class-D Audio Amplifier

Motor Drive Half-Bridge

Use Scenario: Output stage driver in 100 W automotive audio amplifier with THD <0.01% at 1 kHz.

IC Role / Device Role / Timing Role: Floating high-side + grounded low-side driver for complementary N-MOSFET output bridge.

Use Value: Fast rise/fall times (<33 ns) and matched propagation delays minimize dead-time distortion and EMI.

Use Scenario: 24 V BLDC motor controller in industrial HVAC fan module requiring stall protection.

IC Role / Device Role / Timing Role: Gate driver for half-bridge power stage driving sensorless trapezoidal commutation.

Use Value: PHASE node rating (−20 V to +30 V) tolerates inductive kickback during abrupt current interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IR2110PbF	Higher UVLO (10–12 V), no integrated bootstrap diode, 200 ns min dead time, SOIC-16 package	Requires external bootstrap diode and larger layout; suited for lower-frequency industrial motor drives	Select if needing higher voltage isolation or legacy SOIC-16 footprint compatibility
LM5113MMX/NOPB	Separate high/low supply inputs (VDD/VBS), 5 A peak, 12 V max VBS, 16-pin WSON package	Designed for wide-input DC/DC; lacks adaptive shoot-through protection and PVCC adjustability	Select for 48 V input systems where bootstrap voltage headroom is constrained

Compared with IR2110PbF and LM5113MMX/NOPB, the TDA21106 uniquely combines integrated bootstrap diode, PVCC-adjustable high-side drive, and adaptive cross-conduction prevention-making it optimal for space-constrained, high-frequency VRM designs where BOM reduction and timing precision are critical.

Availability

TDA21106 is available at Aetrix Electronics and suitable for desktop motherboard VRMs, multi-phase DC/DC converters, Class-D audio amplifiers, and BLDC motor half-bridge drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TDA21106 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial chips, with global R&D and manufacturing infrastructure.

The CoreControl™ family-including TDA21106-is engineered for high-efficiency, high-frequency power conversion in computing and industrial applications, emphasizing integration, thermal robustness, and layout simplicity.

FAQ

What is the purpose of the PVCC pin on the TDA21106?

The PVCC pin sets the high-side gate drive voltage independently of VCC, allowing adjustment from 6 V to 13.2 V. This enables system-level optimization: lower PVCC reduces gate charge loss and EMI but increases R_DS(on); higher PVCC improves conduction efficiency at the cost of increased switching loss. It connects to a dedicated decoupling capacitor and must be routed with low inductance.

Can the TDA21106 drive both high-side and low-side P-channel MOSFETs?

No. The TDA21106 is designed exclusively for dual N-channel MOSFET configurations in half-bridge topologies. Its GATEHS output is a floating driver referenced to PHASE, and GATELS is ground-referenced-both optimized for N-MOSFET gate capacitance and threshold characteristics. Driving P-MOSFETs would require inverted logic, incompatible voltage referencing, and lacks required source-follower architecture.

How does the adaptive cross-conduction prevention work?

The TDA21106 monitors the PHASE node voltage slew rate and dynamically inserts additional dead time when rapid transitions are detected-preventing simultaneous conduction of high-side and low-side MOSFETs. Unlike fixed dead-time controllers, this analog feedback loop responds in real time to layout parasitics and load dynamics, eliminating need for conservative worst-case dead-time margins.

Is an external bootstrap diode required with the TDA21106?

No. The TDA21106 integrates a bootstrap diode internally between VCC and BOOT pins. This eliminates one discrete component, reduces PCB area, and improves reliability in high-density VRM layouts. An external 0.1 µF ceramic capacitor must still be placed between BOOT and PHASE to sustain the floating high-side supply during HS conduction.

TDA21106 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoreControl™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Driven Configuration:: Half-Bridge

Channel Type:: Synchronous

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 10.8V ~ 13.2V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 4A, 4A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: 45 V

Rise / Fall Time (Typ):: 20ns, 15ns

Operating Temperature:: -25°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8-3

TDA21106 FAQ

1.How can I place an order for TDA21106 through Aetrix?

Please submit a Request for Quotation (RFQ) for TDA21106 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TDA21106 reliable?

The price and inventory of TDA21106 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TDA21106 is usually 5 days.

3.What payment methods are accepted for TDA21106?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TDA21106 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TDA21106?

TDA21106 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TDA21106 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TDA21106?

For technical support, including TDA21106 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TDA21106 requirements.

6.How does Aetrix verify that TDA21106 is sourced from the original manufacturer or authorized distributors?

All TDA21106 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TDA21106 meets industry standards.

7.What is the process for return or replacement of TDA21106?

All TDA21106 units undergo pre-shipment inspection (PSI). If there is an issue with TDA21106, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TDA21106 part is unused and in its original packaging.

Return procedure for TDA21106:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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