Vishay General Semiconductor - Diodes Division TZQ5256B-GS18
- Part No.:
- TZQ5256B-GS18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Zener Diodes
- Package:
- SOD-80 Variant
- Datasheet:
-
TZQ5256B-GS18.pdf
- Description:
- DIODE ZENER 30V 500MW SOD80
- Quantity:
- Payment:

- Shipping:

Inventory:7,629
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Product details
Overview
TZQ5256B-GS18 from Vishay Semiconductors is a precision small-signal Zener diode with nominal zener voltage 30 V, ±5 % tolerance, 4.2 mA test current (IZT), < 0.1 μA reverse leakage at VR = 23 V, and dynamic resistance < 49 Ω at IZT - designed for stable voltage reference and regulation in low-power analog circuits.
For engineers reviewing the TZQ5256B-GS18 datasheet, TZQ5256B-GS18 pinout, TZQ5256B-GS18 application, or TZQ5256B-GS18 equivalent, key selection criteria include zener voltage accuracy, temperature coefficient (+0.091 %/K), thermal stability up to 175 °C junction temperature, and QuadroMELF SOD-80 package suitability for high-reliability PCB layouts requiring low noise and sharp reverse breakdown.
Technical Context
This device operates as a two-terminal voltage reference using controlled avalanche breakdown in silicon, with zener voltage specified at thermal equilibrium (case temperature 30 °C ± 2 °C). Its low dynamic resistance (< 49 Ω) and tight ±5 % VZ tolerance support stable regulation under varying load conditions.
The +0.091 %/K temperature coefficient indicates positive VZ drift with rising temperature - critical for biasing networks where thermal tracking must be modeled. It is rated for 500 mW total power dissipation with RthJA = 500 K/W on standard PCB, and features UL 94 V-0 molding compound and MSL level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener voltage (VZ) | 30 V nominal, ±5 % tolerance - ensures predictable clamping/reference within 28.5–31.5 V at 4.2 mA |
| Test current (IZT) | 4.2 mA - operating point where VZ and dynamic resistance are guaranteed |
| Dynamic resistance (ZZ) | < 49 Ω at IZT - minimizes output voltage variation under load current changes |
| Reverse leakage (IR) | < 0.1 μA at VR = 23 V - enables ultra-low standby power in precision sensing paths |
| Temperature coefficient (TKVZ) | +0.091 %/K - quantifies VZ increase per degree Celsius for thermal drift compensation |
| Power dissipation (Ptot) | 500 mW - maximum steady-state power handling at Tamb = 25 °C with adequate heatsinking |
| Junction temperature (Tj) | −65 to +175 °C - supports operation in extended industrial and automotive under-hood environments |
Pinout & Package
QuadroMELF (SOD-80) surface-mount glass package: cylindrical body with cathode band marking; no discrete pins - terminals formed by metallized end caps. Dimensions: 3.7 mm length × 1.6 mm diameter; weight ≈ 34 mg; UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side reference node | Connected to circuit ground or lower potential; carries forward current up to 200 mA (VF ≤ 1.5 V) |
| Cathode | Zener breakdown terminal / regulated output node | Provides stable 30 V reference when reverse-biased; marked by visible band on glass body |
Key Features
| Feature | Design Value |
|---|---|
| Very sharp reverse characteristic | Enables precise voltage clamping with minimal knee voltage spread - critical for overvoltage protection in ADC reference rails |
| Low reverse leakage current | < 0.1 μA at 23 V allows use in high-impedance bias networks without signal path loading |
| High stability & low noise | Supports metrology-grade references and low-noise amplifier biasing where long-term drift must be minimized |
| ±5 % VZ tolerance | Reduces need for post-production trimming in cost-sensitive consumer and industrial voltage monitor designs |
| MSL level 1 rating | Permits unlimited floor life and standard reflow without baking - simplifies SMT assembly planning |
Applications
| Voltage Reference for Precision ADCs | Overvoltage Clamp in Sensor Signal Conditioning |
|---|---|
Use Scenario: Providing stable 30 V reference to 16-bit SAR ADCs in industrial data acquisition modules. IC Role / Device Role / Timing Role: Two-terminal passive voltage reference establishing VREF input for analog-to-digital conversion. Use Value: ±5 % VZ tolerance and < 49 Ω dynamic resistance ensure reference error remains below 0.2 LSB across temperature and load variations. | Use Scenario: Protecting op-amp inputs in thermocouple amplifiers exposed to ESD transients. IC Role / Device Role / Timing Role: Reverse-biased shunt clamp limiting input voltage to 30 V ±5 % during surge events. Use Value: Sharp reverse knee and < 0.1 μA leakage prevent signal distortion during normal operation while clamping fast transients. |
| Low-Power Bias Generator for RF Front-Ends | Temperature-Compensated Voltage Monitor |
Use Scenario: Generating stable gate bias for GaN HEMTs in battery-powered IoT transceivers. IC Role / Device Role / Timing Role: Zener-based current source feeding high-impedance bias node with minimal quiescent draw. Use Value: 500 mW power rating and +0.091 %/K TKVZ allow predictable bias shift across −40 to +125 °C ambient range. | Use Scenario: Monitoring 30 V rail integrity in telecom power supplies with thermal drift compensation. IC Role / Device Role / Timing Role: Primary sensing element in comparator-based undervoltage lockout (UVLO) circuit. Use Value: Known +0.091 %/K coefficient enables software calibration of trip threshold versus board temperature sensor readings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C30 (ON Semiconductor) | Same 30 V nominal, ±5 %, but SOD-323 package (smaller footprint); higher ZZ (~70 Ω); MSL level 1 | Preferred for space-constrained PCBs; less suitable for high-stability analog references due to higher dynamic resistance | Select BZX55C30 only if board area is critical and thermal drift budget allows higher ZZ-induced error. |
| 1N4749A (ON Semiconductor) | 30 V nominal, ±5 %, DO-41 through-hole; Ptot = 1 W; higher IR (≤ 10 μA at 23 V); TKVZ = +0.09 %/K | Used in legacy through-hole designs or where higher power margin is required; not suitable for automated SMT lines | Choose 1N4749A only for prototyping or repair of existing through-hole systems - not for new SMT designs. |
Compared with BZX55C30 and 1N4749A, TZQ5256B-GS18 delivers superior low-noise performance and tighter thermal stability in a robust QuadroMELF package optimized for automated placement and high-reliability industrial use - making it the preferred choice for precision voltage reference applications demanding long-term repeatability.
Availability
TZQ5256B-GS18 is available at Aetrix Electronics and suitable for voltage reference design, overvoltage protection, and low-power bias generation requiring stable component supply, consistent parametric performance, and full traceability across production batches.
Supply support for TZQ5256B-GS18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements with emphasis on reliability, precision, and high-volume manufacturability.
TZQ5256B-GS18 belongs to Vishay's TZQ52xxB series of small-signal Zener diodes - engineered for high-stability voltage regulation in industrial, automotive, and communications equipment where low noise, sharp breakdown, and thermal predictability are essential.
FAQ
What is the nominal zener voltage and tolerance of TZQ5256B-GS18?
TZQ5256B-GS18 has a nominal zener voltage of 30 V with a tolerance of ±5 %, meaning its actual breakdown voltage falls between 28.5 V and 31.5 V when measured at the specified test current of 4.2 mA under thermal equilibrium conditions. This tolerance is guaranteed per Vishay's Rev. 2.0 datasheet (Document Number: 85612).
What package type does TZQ5256B-GS18 use, and what are its key mechanical features?
TZQ5256B-GS18 uses the QuadroMELF (SOD-80) glass-body surface-mount package: cylindrical form with cathode band marking, 3.7 mm length × 1.6 mm diameter, ≈34 mg weight, UL 94 V-0 flammability rating, and MSL level 1 per J-STD-020 - enabling direct reflow without baking and supporting high-reliability automated assembly.
What is the maximum power dissipation and thermal resistance of TZQ5256B-GS18?
TZQ5256B-GS18 has a maximum total power dissipation (Ptot) of 500 mW at Tamb = 25 °C with RthJA = 500 K/W on a standard PCB (50 mm × 50 mm × 1.6 mm). Its maximum junction temperature is 175 °C, and storage temperature range is −65 to +175 °C - validated per absolute maximum ratings in the official Vishay datasheet.
How does the temperature coefficient of TZQ5256B-GS18 affect its voltage reference performance?
TZQ5256B-GS18 has a temperature coefficient (TKVZ) of +0.091 %/K, indicating its zener voltage increases by approximately 27.3 mV per °C rise in junction temperature. This predictable positive drift enables accurate thermal compensation in precision reference designs - especially important in industrial environments where ambient shifts exceed 80 °C.
Is TZQ5256B-GS18 suitable for low-noise analog applications such as sensor excitation or ADC reference?
Yes, TZQ5256B-GS18 is explicitly characterized for low-noise operation and very sharp reverse breakdown - key features highlighted in Vishay's datasheet. Its < 0.1 μA reverse leakage at 23 V and < 49 Ω dynamic resistance at 4.2 mA make it suitable for precision analog functions including sensor excitation, ADC reference, and low-drift bias generation where signal integrity is critical.
TZQ5256B-GS18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- SOD-80 Variant
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 30 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 49 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 23 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-80 QuadroMELF
TZQ5256B-GS18 FAQ
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The price and inventory of TZQ5256B-GS18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TZQ5256B-GS18 is usually 5 days.
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6.How does Aetrix verify that TZQ5256B-GS18 is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of TZQ5256B-GS18?
All TZQ5256B-GS18 units undergo pre-shipment inspection (PSI). If there is an issue with TZQ5256B-GS18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TZQ5256B-GS18 part is unused and in its original packaging.
Return procedure for TZQ5256B-GS18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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