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Vishay General Semiconductor - Diodes Division VS-ST083S08MFM0
- Part No.:
- VS-ST083S08MFM0
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- SCRs
- Package:
- TO-209AC, TO-94-4, Stud
- Datasheet:
-
VS-ST083S08MFM0.pdf
- Description:
- SCR 800V 135A TO209AC
- Quantity:
- Payment:
- Shipping:
Inventory:9,198
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Product details
Overview
VS-ST083S08MFM0 from Vishay Semiconductors is an inverter-grade stud-mount silicon-controlled rectifier (SCR) with 85 A average on-state current, 800 V repetitive peak off-state voltage (VRRM), and 2.15 V maximum on-state voltage at 300 A. It features center-amplifying gate structure, 10–20 μs turn-off time, and low thermal impedance (RthJC = 0.195 K/W), designed for high-reliability industrial power conversion in forced-commutated inverters and induction heating systems.
For engineers reviewing the VS-ST083S08MFM0 datasheet, VS-ST083S08MFM0 pinout, VS-ST083S08MFM0 application, or VS-ST083S08MFM0 equivalent, this device requires attention to gate trigger current (200 mA), surge capability (2560 A at 60 Hz), thermal mounting torque (14 N·m lubricated), and stud-base mechanical interface (M12 metric thread).
Technical Context
This SCR uses compression bonding and a center-amplifying gate to achieve fast, robust turn-on with low dV/dt sensitivity (500 V/μs standard). Its TO-94 (TO-209AC) stud package enables direct heatsink mounting and supports high-current conduction angles down to 30° while maintaining thermal stability up to 125 °C junction temperature.
The device operates with rated VRRM reapplied after surge, delivers 1000 A/μs non-repetitive dI/dt capability, and exhibits defined reverse recovery behavior (Qrr and Irr characterized at ITM = 50–500 A), making it suitable for controlled commutation in chopper and inverter topologies where precise tq and dV/dt immunity are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IT(AV) | 85 A average on-state current at 85 °C case temperature - defines continuous DC or half-sine load handling capacity |
| VRRM | 800 V repetitive peak reverse voltage - sets maximum blocking capability under normal operation |
| VTM | 2.15 V max at 300 A, TJ = max - determines conduction loss and thermal rise under full-load conditions |
| ITSM (60 Hz) | 2560 A non-repetitive surge current - supports short-circuit withstand and motor-start transients |
| tq | 10–20 μs turn-off time - enables operation up to ~1 kHz switching in forced-commutated converters |
| RthJC | 0.195 K/W junction-to-case thermal resistance - allows direct thermal modeling for heatsink sizing |
| IGT | 200 mA max gate trigger current at 25 °C - defines minimum driver strength required for reliable turn-on |
Pinout & Package
VS-ST083S08MFM0 uses a TO-94 (TO-209AC) stud-mount package with M12 metric thread (per ordering code "M"), eyelet terminals (code "0" for gate and auxiliary cathode leads), and compression-bonded construction. The case serves as the main anode terminal; gate and auxiliary cathode are brought out via insulated flexible leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Case) | Main power input terminal | Electrically connected to metal stud base - must be isolated from heatsink unless circuit design permits common-anode configuration |
| Gate (Red lead) | Control input for triggering conduction | Requires ≥200 mA DC pulse; sensitive to dV/dt - needs snubber or gate resistor per application conditions |
| Auxiliary Cathode (White lead) | Reference point for gate drive and sensing | Provides low-inductance return path independent of main cathode current path - improves noise immunity and trigger reliability |
Key Features
| Feature | Design Value |
|---|---|
| Center-amplifying gate | Enables uniform firing across large-area silicon - improves di/dt rating and reduces localized hot-spot risk during turn-on |
| Compression bonding | Eliminates wire bonds - enhances mechanical robustness and thermal cycling endurance in high-vibration industrial environments |
| Low RthJC (0.195 K/W) | Reduces junction temperature rise by ~17 K per 100 W dissipation vs. typical discrete SCRs - extends lifetime in sealed enclosures |
| High dI/dt capability (1000 A/μs) | Supports rapid current rise in resonant and zero-current-switching topologies without false triggering |
| Industrial qualification | Rated for -40 °C to +125 °C operation with 15.5 N·m non-lubricated or 14 N·m lubricated mounting torque - meets IEC 60747-6 requirements |
Applications
| Induction Heating Systems | Motor Drive Inverters |
|---|---|
|
Use Scenario: Medium-frequency (1–10 kHz) resonant tank circuits for metal heating in forging and brazing equipment. IC Role / Device Role / Timing Role: Main power switch in series-resonant inverter bridge, triggered at zero-voltage crossing to minimize switching loss. Use Value: 20 μs max tq and 500 V/μs dV/dt rating ensure stable commutation under high dI/dt and variable load Q-factor. |
Use Scenario: Three-phase AC drives for pumps, fans, and conveyors operating at 400–690 V AC input. IC Role / Device Role / Timing Role: Line-commutated phase-controlled rectifier in 6-pulse front-end, regulating DC bus voltage via firing angle control. Use Value: 85 A IT(AV) and 2560 A ITSM support continuous 30 kW operation with 2× overload margin for motor startup surges. |
| DC Choppers | Force-Commutated Converters |
|
Use Scenario: High-power battery-fed DC-DC step-down converters in traction and energy storage systems. IC Role / Device Role / Timing Role: Main switching element in hard-commutated chopper, turned off via external LC snubber network. Use Value: Defined I²t (27 kA²s at 60 Hz) and low rt2 (2.34 mΩ) enable predictable fuse coordination and minimal conduction loss at 500–1000 A peak. |
Use Scenario: Static VAR compensators (SVCs) and active power filters using GTO-assisted or capacitor-commutated thyristor bridges. IC Role / Device Role / Timing Role: Main valve in asymmetrical or symmetrical commutation cells, requiring precise tq matching and low leakage. Use Value: Tight tq (10–20 μs) range and <30 mA IDRM at 125 °C ensure consistent turn-off timing and low standby loss in multi-device stacks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SCR-based power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS M50100L | Same 85 A IT(AV), but TO-200AA package with bolt-down anode; VRRM = 1000 V; tq = 15–30 μs | Higher voltage rating suits 690 V AC systems; longer tq limits max frequency to ~500 Hz | Select when higher blocking voltage and bolt-mount compatibility outweigh tighter tq requirements |
| STMicroelectronics TN8550 | 85 A IT(AV), 800 V VRRM, TO-209AB (stud) package; tq = 12–25 μs; RthJC = 0.22 K/W | Slightly higher thermal resistance increases heatsink sizing requirement by ~13 % at same power | Choose for legacy ST ecosystem integration where identical voltage/current specs suffice and minor thermal penalty is acceptable |
Compared with VS-ST083S08MFM0, M50100L offers higher voltage headroom but looser tq control, while TN8550 matches voltage and current ratings but trades 13 % higher thermal resistance for broader distributor availability - both require gate drive recalibration due to differing IGT (150 mA vs. 200 mA) and PG(AV) limits.
Availability
VS-ST083S08MFM0 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and DC chopper designs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for VS-ST083S08MFM0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability power devices, optoelectronics, and passive components for industrial, automotive, and computing markets.
The VS-ST083SP Series is part of Vishay's inverter-grade thyristor product line, engineered specifically for ruggedized, high-current force-commutated power conversion in demanding industrial environments.
FAQ
What is the maximum allowable case temperature for continuous operation of VS-ST083S08MFM0?
The maximum allowable case temperature for continuous operation of VS-ST083S08MFM0 is 85 °C, as specified in the IT(AV) rating condition. Exceeding this temperature reduces the average current derating curve significantly - at 100 °C case, IT(AV) drops to approximately 65 A based on the published conduction-angle derating data.
Does VS-ST083S08MFM0 require a heatsink, and what is the recommended mounting torque?
Yes, VS-ST083S08MFM0 requires a heatsink due to its 0.195 K/W RthJC and power dissipation under load. The recommended mounting torque is 14 N·m for lubricated M12 threads or 15.5 N·m for non-lubricated threads, per the mechanical specifications in the datasheet - incorrect torque risks thermal contact failure or stud deformation.
What gate drive parameters are required to reliably trigger VS-ST083S08MFM0?
VS-ST083S08MFM0 requires a minimum DC gate trigger current of 200 mA at 25 °C, with gate voltage ≤3 V. For robust operation, Vishay recommends a 10 V, 10 Ω gate drive source (per Fig. 15), delivering ≥40 W peak gate power (PGM) for ≤5 ms pulses - insufficient drive causes erratic turn-on or increased tq dispersion.
Can VS-ST083S08MFM0 be used in parallel configurations, and what precautions apply?
VS-ST083S08MFM0 is not recommended for direct paralleling without individual gate drive and current-sharing inductors. Its forward voltage spread (VT(TO)1 = 1.46 V, VT(TO)2 = 1.52 V) and gate threshold variation necessitate matched devices, symmetrical layout, and forced-air cooling to avoid thermal runaway - parallel use requires derating to ≤70 % of total rated current.
What is the meaning of the "FM0" suffix in VS-ST083S08MFM0?
In VS-ST083S08MFM0, "F" indicates standard dV/dt rating (500 V/μs), "M" denotes M12 metric stud thread, and "0" specifies eyelet terminals for both gate and auxiliary cathode leads - this full suffix defines mechanical interface, terminal type, and critical transient immunity characteristics per Vishay's ordering code system.
VS-ST083S08MFM0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-209AC, TO-94-4, Stud
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Off State:
- 800 V
- Voltage - Gate Trigger (Vgt) (Max):
- 3 V
- Current - Gate Trigger (Igt) (Max):
- 200 mA
- Voltage - On State (Vtm) (Max):
- 2.15 V
- Current - On State (It (AV)) (Max):
- 85 A
- Current - On State (It (RMS)) (Max):
- 135 A
- Current - Hold (Ih) (Max):
- 600 mA
- Current - Off State (Max):
- 30 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 2060A, 2160A
- SCR Type:
- Standard Recovery
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis, Stud Mount
- Supplier Device Package:
- TO-209AC (TO-94)
VS-ST083S08MFM0 FAQ
1.How can I place an order for VS-ST083S08MFM0 through Aetrix?
Please submit a Request for Quotation (RFQ) for VS-ST083S08MFM0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VS-ST083S08MFM0 reliable?
The price and inventory of VS-ST083S08MFM0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VS-ST083S08MFM0 is usually 5 days.
3.What payment methods are accepted for VS-ST083S08MFM0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VS-ST083S08MFM0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VS-ST083S08MFM0?
VS-ST083S08MFM0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VS-ST083S08MFM0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VS-ST083S08MFM0?
For technical support, including VS-ST083S08MFM0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VS-ST083S08MFM0 requirements.
6.How does Aetrix verify that VS-ST083S08MFM0 is sourced from the original manufacturer or authorized distributors?
All VS-ST083S08MFM0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VS-ST083S08MFM0 meets industry standards.
7.What is the process for return or replacement of VS-ST083S08MFM0?
All VS-ST083S08MFM0 units undergo pre-shipment inspection (PSI). If there is an issue with VS-ST083S08MFM0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VS-ST083S08MFM0 part is unused and in its original packaging.
Return procedure for VS-ST083S08MFM0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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