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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPB120N08S403ATMA1 MOSFET N-CH 80V 120A TO263-3 Infineon Technologies	7,495	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	2.5mOhm @ 100A, 10V	4V @ 223µA	167 nC @ 10 V	±20V	11550 pF @ 25 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-3-2
IPB180N04S302ATMA1 MOSFET N-CH 40V 180A TO263-7 Infineon Technologies	5,901	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	40 V	180A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 230µA	210 nC @ 10 V	±20V	14300 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-3
IRFP3703 MOSFET N-CH 30V 210A TO247AC Infineon Technologies	5,019	RFQ	Datasheet	HEXFET®	TO-247-3	Bag	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	210A (Tc)	7V, 10V	2.8mOhm @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	8250 pF @ 25 V	-	3.8W (Ta), 230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
IPZ60R070P6FKSA1 MOSFET N-CH 600V 53.5A TO247-4 Infineon Technologies	9,914	RFQ	Datasheet	CoolMOS™ P6	TO-247-4	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	53.5A (Tc)	10V	70mOhm @ 20.6A, 10V	4.5V @ 1.72mA	100 nC @ 10 V	±20V	4750 pF @ 100 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4
IRLML2502TR MOSFET N-CH 20V 4.2A SOT-23 Infineon Technologies	6,525	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 4.2A, 4.5V	1.2V @ 250µA	12 nC @ 5 V	±12V	740 pF @ 15 V	-	1.25W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
SIPC26N80C3 MOSFET COOL MOS 600V SAWED WAFER Infineon Technologies	7,326	RFQ	Datasheet	*	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRF5210STRL MOSFET P-CH 100V 38A D2PAK Infineon Technologies	5,149	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	38A (Tc)	10V	60mOhm @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	2780 pF @ 25 V	-	3.1W (Ta), 170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
AIMZHN120R060M1TXKSA1 SIC_DISCRETE Infineon Technologies	5,779	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	38A (Tc)	18V, 20V	75mOhm @ 13A, 20V	5.1V @ 4.3mA	32 nC @ 20 V	+23V, -5V	880 pF @ 800 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-14
GS66502B-TR GS66502B-TR Infineon Technologies Canada Inc.	4,677	RFQ	-	-	3-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.5A (Tc)	6V	260mOhm @ 2.25A, 6V	2.6V @ 1.75mA	1.6 nC @ 6 V	+7V, -10V	60 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
IRFL4315 MOSFET N-CH 150V 2.6A SOT223 Infineon Technologies	9,941	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	2.6A (Ta)	10V	185mOhm @ 1.6A, 10V	5V @ 250µA	19 nC @ 10 V	±30V	420 pF @ 25 V	-	2.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223

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