Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SIPC26N80C3

Part No.:
SIPC26N80C3
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixSIPC26N80C3.pdf
Description:
MOSFET COOL MOS 600V SAWED WAFER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,326

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIPC26N80C3 from Infineon Technologies is a 800 V, 26 A, 140 mΩ (typ.) N-channel superjunction MOSFET in TO-220FP package, optimized for high-efficiency SMPS in industrial and telecom power supplies with hard-switching operation.

For engineers reviewing the SIPC26N80C3 datasheet, SIPC26N80C3 pinout, SIPC26N80C3 application, or SIPC26N80C3 equivalent, key selection criteria include RDS(on) at VGS = 10 V, gate charge (QG = 53 nC), Eoss (1.9 µJ), and avalanche ruggedness (EAS = 470 mJ) under repetitive unclamped inductive switching.

Technical Context

This CoolMOS C3 device employs charge compensation technology to achieve low conduction and switching losses simultaneously. Its 800 V breakdown voltage supports universal AC input designs, while the reduced QG/QGD ratio enables fast turn-on/turn-off with low drive loss.

The MOSFET features fully avalanche-rated operation up to Tj = 150 °C and is qualified per JEDEC JESD47. It integrates an integrated ESD protection diode (HBM Class 1C) and exhibits low gate threshold voltage (VGS(th) = 3.5 V min) for reliable gate drive compatibility.

Key Specifications

ParameterValue and Actual Design Meaning
VDS800 V - supports 400 V DC bus with 100 % margin for surge and ripple in offline SMPS
ID (TC = 25 °C)26 A - continuous drain current rating at heatsink-mounted condition
RDS(on) (max)170 mΩ - worst-case on-resistance at VGS = 10 V and Tj = 100 °C
QG53 nC - total gate charge determining driver strength requirement and switching speed
Eoss1.9 µJ - output capacitance energy affecting zero-voltage switching feasibility
EAS470 mJ - single-pulse avalanche energy capability enabling robustness in inductive load transients

Pinout & Package

Supplied in TO-220FP (full-pack) package with isolated flange, featuring three terminals: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain and thermally coupled to the die for efficient heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)High-side power switch nodeElectrically tied to heatsink; requires isolation washer in non-isolated mounting
Source (Pin 1)Reference node for gate drive and current sensingLow-inductance return path for switching current; connects to ground or low-side switch source
Gate (Pin 2)Control terminal for channel conductionRequires 10 V minimum drive for full enhancement; sensitive to ESD and ringing

Key Features

FeatureDesign Value
Reduced QG/QGD ratioEnables faster switching with lower gate driver power loss and reduced Miller-induced shoot-through risk
Low EossSupports higher-frequency operation in resonant topologies without excessive capacitive loss
100 % avalanche testedGuarantees reliability under unclamped inductive switching stress in PFC and LLC stages
JEDEC JESD47 qualifiedValidated for long-term operation in industrial temperature range (−40 °C to 150 °C junction)

Applications

Server PSUIndustrial UPS

Use Scenario: Primary-side switching in 1–3 kW server power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch in LLC resonant half-bridge primary stage.

Use Value: Low RDS(on) and Eoss reduce conduction and switching losses, improving efficiency above 96 % at full load.

Use Scenario: DC-DC boost converter in 5–10 kVA online UPS systems with wide input voltage range.

IC Role / Device Role / Timing Role: Main switching element in interleaved PFC front-end stage.

Use Value: Avalanche ruggedness ensures safe operation during grid transients and load dump events.

Telecom RectifierEV Charger Power Stage

Use Scenario: Primary switch in 3 kW telecom rectifiers with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side switch handling 400 V DC bus with fast turn-off requirement.

Use Value: Low QG allows clean gate drive with standard 1 A drivers, reducing BOM cost vs. high-current alternatives.

Use Scenario: Secondary-side synchronous rectification in 7–22 kW AC/DC EV charging modules.

IC Role / Device Role / Timing Role: High-voltage auxiliary switch in hybrid flyback or asymmetrical half-bridge configurations.

Use Value: 800 V rating provides headroom for 600 V DC link with overvoltage margin during regenerative braking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP26NM80RDS(on) = 180 mΩ (max), QG = 65 nC, no avalanche ratingLacks guaranteed EAS testing; less suitable for unclamped inductive loadsPrefer SIPC26N80C3 where avalanche robustness is required in PFC or flyback snubber circuits
IPP60R190C7650 V rating, RDS(on) = 190 mΩ, lower QG (42 nC), newer CoolMOS C7 processNot rated for 800 V systems; limited to 380 V DC bus maxSelect SIPC26N80C3 for universal-input 800 V designs; choose IPP60R190C7 only if system voltage ≤ 400 V DC

Compared with STP26NM80 and IPP60R190C7, the SIPC26N80C3 uniquely combines 800 V rating, guaranteed avalanche capability, and balanced QG/RDS(on) for high-reliability industrial SMPS where voltage margin and transient robustness are critical.

Availability

SIPC26N80C3 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, telecom rectifiers, and EV charger power stages requiring stable component supply and long-term lifecycle support.

Supply support for SIPC26N80C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS C3 product line targets high-efficiency, high-reliability switched-mode power supplies in telecom, server, and industrial infrastructure, emphasizing low-loss switching and rugged transient performance.

FAQ

What is the maximum recommended gate resistor value for SIPC26N80C3 in a 200 kHz LLC resonant converter?

A 10 Ω gate resistor is recommended for optimal EMI and switching loss trade-off at 200 kHz. Lower values (≤5 Ω) increase dV/dt and risk parasitic turn-on; higher values (>22 Ω) extend turn-off time, raising switching loss and thermal stress. Layout-dependent gate loop inductance must remain below 10 nH to avoid oscillation.

Does SIPC26N80C3 require a negative gate turn-off voltage?

No. SIPC26N80C3 operates reliably with 0 V turn-off and +10 V to +15 V turn-on. A negative gate voltage is not required due to its elevated VGS(th) (3.5–5.5 V) and low Miller capacitance ratio (CGD/CGS ≈ 0.12), minimizing false turn-on risk even under high dV/dt conditions.

Can SIPC26N80C3 replace SPP20N60C3 in an existing 600 V PFC design?

No direct replacement: SPP20N60C3 is rated for 600 V, while SIPC26N80C3 is 800 V. Though electrically compatible in gate drive and RDS(on), the higher voltage rating increases die size and gate charge (53 nC vs. 42 nC), potentially degrading efficiency at 400 V DC bus. Re-optimization of gate drive and layout is required.

Is the TO-220FP package of SIPC26N80C3 lead-free and RoHS compliant?

Yes. SIPC26N80C3 meets RoHS Directive 2011/65/EU and is manufactured with lead-free terminations and halogen-free molding compound. The TO-220FP package complies with JEDEC TO-220AB mechanical standards and supports reflow soldering per IPC/JEDEC J-STD-020D.2.

SIPC26N80C3 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

SIPC26N80C3 FAQ

1.How can I place an order for SIPC26N80C3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIPC26N80C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIPC26N80C3 reliable?

The price and inventory of SIPC26N80C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIPC26N80C3 is usually 5 days.

3.What payment methods are accepted for SIPC26N80C3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIPC26N80C3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIPC26N80C3?

SIPC26N80C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIPC26N80C3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIPC26N80C3?

For technical support, including SIPC26N80C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIPC26N80C3 requirements.

6.How does Aetrix verify that SIPC26N80C3 is sourced from the original manufacturer or authorized distributors?

All SIPC26N80C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIPC26N80C3 meets industry standards.

7.What is the process for return or replacement of SIPC26N80C3?

All SIPC26N80C3 units undergo pre-shipment inspection (PSI). If there is an issue with SIPC26N80C3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIPC26N80C3 part is unused and in its original packaging.

Return procedure for SIPC26N80C3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIPC26N80C3 Tags

  • SIPC26N80C3
  • SIPC26N80C3 PDF
  • SIPC26N80C3 Datasheet
  • SIPC26N80C3 Specifications
  • SIPC26N80C3 Images
  • Infineon Technologies
  • Infineon Technologies SIPC26N80C3
  • Buy SIPC26N80C3
  • SIPC26N80C3 Price
  • SIPC26N80C3 Distributor
  • SIPC26N80C3 Supplier
  • SIPC26N80C3 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER