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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP3703

Name: IRFP3703
Brand: Infineon Technologies
SKU: IRFP3703
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP3703

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP3703.pdf

Description:: MOSFET N-CH 30V 210A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:5,019

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Product details

Overview

IRFP3703 from Infineon Technologies is a 30V, 210A (T_C=25°C), N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 2.3mΩ typical R_DS(on) at V_GS=10V and fully avalanche-rated operation up to 175°C junction temperature - deployed in high-current synchronous rectification stages of telecom forward/bridge converters.

For engineers reviewing the IRFP3703 datasheet, IRFP3703 pinout, IRFP3703 application, or IRFP3703 equivalent, key selection criteria include its ultra-low on-resistance, 1000A pulsed drain capability, 5.0V/ns peak diode recovery dv/dt rating, and thermal resistance R_θJC of 0.65°C/W for high-power SMPS thermal design.

Technical Context

This HEXFET® power MOSFET uses planar silicon process with optimized cell layout to achieve low gate charge (Q_g = 209nC) and low output capacitance (C_oss = 3000pF at V_DS=25V), enabling high-efficiency switching in hard-switched DC/DC topologies. Its body diode exhibits t_rr = 80–120ns and Q_rr = 185–275nC under defined conditions, supporting fast-recovery synchronous rectification.

The device supports gate drive voltages from ±20V, with V_GS(th) ranging 2.0–4.0V and g_fs = 150S at V_DS=24V/ID=76A. Its SOA curve permits safe operation up to 210A continuous at T_C ≤ 25°C and maintains stable R_DS(on) over -55°C to +175°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	30V - maximum blocking voltage before avalanche onset; defines usable input voltage headroom in 24V-input SMPS designs
R_DS(on) max	2.8mΩ at V_GS=10V, I_D=76A - sets conduction loss floor in high-current paths (e.g., <0.5W loss at 100A)
I_D continuous	210A at T_C=25°C - enables single-device use in >1kW synchronous rectifiers without paralleling
Q_g	209nC - determines gate driver current demand and switching energy overhead in 100–500kHz converters
t_rr	80–120ns - constrains minimum dead time in synchronous rectifier control to prevent shoot-through
R_θJC	0.65°C/W - allows direct heatsink mounting with predictable junction-to-case thermal drop under full load
E_AS	1700mJ - supports unclamped inductive switching survival during transient fault events in industrial power supplies

Pinout & Package

IRFP3703 is housed in a through-hole TO-247AC package with isolated tab (drain-connected), optimized for forced-air or liquid-cooled heatsinking. Mounting torque: 10 lbf·in (1.1N·m); soldering temperature limit: 300°C for 10 seconds at 1.6mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat transfer surface	Electrically connected to metal tab; requires insulating pad if heatsink is grounded; primary thermal path to heatsink
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring configurations
Gate	Control terminal for channel modulation	High-impedance input requiring <20V absolute rating; sensitive to ESD; drives with low-impedance gate driver recommended

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.3mΩ typ. at 10V gate drive - reduces conduction losses by >40% vs. legacy 30V MOSFETs in 48V-output telecom rectifiers
Full avalanche rating	1700mJ single-pulse E_AS - eliminates need for external snubbers in unclamped inductive switching applications
High-temperature operation	Junction rating up to +175°C - enables compact thermal design in sealed industrial enclosures without derating
Fast body diode recovery	t_rr = 80–120ns, Q_rr = 185–275nC - minimizes reverse recovery loss and EMI in synchronous rectifier mode
Low gate charge	Q_g = 209nC - supports efficient 300–500kHz switching with standard 2A peak gate drivers

Applications

Telecom Forward Converter SR

Industrial Bridge Rectifier

Use Scenario: Secondary-side synchronous rectification in 48V-input, 12V/200A telecom forward converter operating at 300kHz.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: Achieves >97% efficiency at full load by eliminating 0.4V diode drop; R_DS(on) <2.8mΩ limits conduction loss to <0.6W per device.

Use Scenario: Active ORing in redundant 28V DC power distribution system for factory automation PLC backplanes.

IC Role / Device Role / Timing Role: Low-loss bidirectional current path controller; used in ideal diode configuration with external gate driver and current-sense feedback.

Use Value: Enables <10mV forward voltage drop vs. 400mV for discrete diodes, reducing heat generation and improving system reliability under 150A load.

Offline AC/DC PFC Stage

High-Power Motor Drive Inverter

Use Scenario: High-current switching element in interleaved boost PFC stage of 3kW server PSU with 380V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in critical-conduction-mode (CrM) boost cell; operated at variable frequency up to 200kHz.

Use Value: Avalanche rating ensures robustness against line surges; low C_oss (3000pF) minimizes turn-on loss during zero-voltage switching transitions.

Use Scenario: Phase-leg low-side switch in 15kW servo drive inverter powering permanent-magnet synchronous motor (PMSM).

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10kHz PWM inverter leg; gate-driven with isolated 15V supply and negative turn-off bias.

Use Value: 210A continuous rating and 0.65°C/W R_θJC allow direct heatsink mounting without paralleling; 175°C TJ rating supports operation in high-ambient industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP210N3LLH6	R_DS(on) = 2.1mΩ (typ), Q_g = 220nC, TO-247 long leads; slightly lower R_DS(on) but higher gate charge	Same telecom forward converter use, but requires stronger gate driver due to higher Q_g	Prefer when lowest conduction loss dominates; verify gate driver peak current capability ≥2.5A
IXFH320N30P	R_DS(on) = 2.4mΩ (typ), Q_g = 195nC, TO-247 non-isolated tab; lower gate charge but no isolated drain tab	Suitable for heatsink-grounded layouts only; not interchangeable where isolation is required	Choose when mechanical layout permits grounded heatsink and gate drive margin is limited

Compared with STP210N3LLH6 and IXFH320N30P, IRFP3703 offers the best balance of isolated tab, moderate Q_g, and proven avalanche ruggedness - making it preferred for safety-critical telecom and industrial SMPS where layout flexibility and fault tolerance are prioritized over marginal R_DS(on) reduction.

Availability

IRFP3703 is available at Aetrix Electronics and suitable for telecom forward converters, industrial active ORing systems, offline AC/DC PFC stages, and high-power motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IRFP3703 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFP3703 belongs to Infineon's HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion applications including telecom, server, and industrial motor control.

FAQ

Is IRFP3703 suitable for surface-mount assembly?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per Infineon's datasheet. It is a through-hole package designed for bolt-down heatsink mounting with mechanical torque specification (10 lbf·in). SMT variants require different packages such as TO-263 or DirectFET.

What is the maximum gate drive voltage for reliable operation?

The absolute maximum gate-to-source voltage is ±20V. Reliable continuous operation is specified at V_GS = 10V for R_DS(on) characterization. Gate drive circuits must clamp transients beyond ±20V to prevent oxide damage; typical designs use ±12V to +15V/–5V gate bias.

Does IRFP3703 have a built-in ESD protection diode?

No. The IRFP3703 does not integrate gate ESD protection. Its gate oxide is susceptible to electrostatic discharge; handling and PCB layout require strict adherence to Class 1B ESD controls, including grounded workstations, conductive foam storage, and gate-to-source shorting during assembly.

Can IRFP3703 be paralleled for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (0.028V/°C) enables inherently stable current sharing. Successful paralleling requires matched gate drive loop inductance, symmetrical PCB layout, and Kelvin source connections to avoid oscillation; derating total current by 15% is recommended for thermal margin.

IRFP3703 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 76A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 209 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP3703 FAQ

1.How can I place an order for IRFP3703 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP3703 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP3703 reliable?

The price and inventory of IRFP3703 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP3703 is usually 5 days.

3.What payment methods are accepted for IRFP3703?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP3703 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP3703?

IRFP3703 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP3703 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP3703?

For technical support, including IRFP3703 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP3703 requirements.

6.How does Aetrix verify that IRFP3703 is sourced from the original manufacturer or authorized distributors?

All IRFP3703 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP3703 meets industry standards.

7.What is the process for return or replacement of IRFP3703?

All IRFP3703 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP3703, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP3703 part is unused and in its original packaging.

Return procedure for IRFP3703:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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