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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZHN120R060M1TXKSA1

Name: AIMZHN120R060M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZHN120R060M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZHN120R060M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZHN120R060M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZHN120R060M1TXKSA1 from Infineon is a 1200 V, 38 A CoolSiC™ Gen1p silicon carbide trench MOSFET in PG-TO247-4-U05 package with Kelvin source (4-pin), featuring R_DS(on) = 60 mΩ at 25°C and 20 V gate drive, 2 ns short-circuit withstand time at 20 V, and 7.07 mm minimum creepage for high-voltage on-board chargers.

For engineers reviewing the AIMZHN120R060M1TXKSA1 datasheet, AIMZHN120R060M1TXKSA1 pinout, AIMZHN120R060M1TXKSA1 application, or AIMZHN120R060M1TXKSA1 equivalent, key selection criteria include unipolar 20 V gate drive compatibility, low Crss/Ciss ratio to suppress parasitic turn-on, sense-pin–enabled switching optimization, and AEC-Q101 qualification for automotive traction auxiliary systems.

Technical Context

This SiC MOSFET employs a trench-gate structure with Gen1p chip technology optimized for R_DS(on) × Q_G figure-of-merit, enabling high power density in hard-switched topologies. Its 20 V recommended turn-on voltage reduces conduction loss while maintaining safe margin against gate oxide stress.

The 4-pin TO247 package integrates a dedicated Kelvin source terminal to eliminate source inductance impact on gate control, ensuring stable switching waveforms. Low C_iss (880 pF), C_oss (43 pF), and Crss (2 pF) enable >1 MHz operation with minimal EMI and reduced snubber requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports DC link voltages up to 900 V in 800 V-class EV systems with 25% safety margin
R_DS(on)	60 mΩ @ 25°C, 20 V - enables <1.5 W conduction loss at 38 A, reducing heatsink size in OBCs
I_DDC	38 A @ T_C = 25°C - delivers full rated current without derating in forced-air-cooled 3.3 kW OBC designs
t_SC	1.5 µs @ V_GS = 20 V - provides robust fault handling during DC-link short circuits in isolated DC/DC converters
C_rss/C_iss	2 pF / 880 pF - ratio of 0.0023 minimizes Miller-induced dv/dt turn-on risk under high di/dt conditions
V_GS(th)	3.7–5.1 V @ 25°C - high threshold improves noise immunity and enables reliable unipolar gate driving
Q_G	32 nC - reduces gate driver power consumption and allows use of lower-cost 1.5 A drivers
Creepage	7.07 mm - satisfies reinforced insulation requirements per IEC 60664-1 for 1200 V working voltage

Pinout & Package

Package: PG-TO247-4-U05 - 4-terminal through-hole package with isolated Kelvin source pin for precise gate control and minimized source inductance coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	High-side power output node	Connected to DC-link positive; carries full load current and withstands 1200 V blocking
2 – Source	Main power return path	Carries load current to ground/power rail; used for thermal mounting and current sensing
3 – Kelvin Sense	Gate reference point	Provides low-inductance gate-source reference to eliminate source inductance effects on switching timing
4 – Gate	Control input	Receives 20 V turn-on signal; requires external 2 Ω gate resistor for optimal dV/dt control

Key Features

Feature	Design Value
Gen1p SiC trench die	Optimized R_DS(on) × Q_G FOM enables 15% higher power density vs prior CoolSiC generation
Kelvin source configuration	Eliminates source inductance impact on gate loop, enabling clean 10 ns rise/fall times at 13 A
20 V recommended V_GS(on)	Reduces R_DS(on) by 8% vs 18 V drive while maintaining gate oxide reliability over 15-year automotive life
AEC-Q101 qualified	Validated for automotive-grade temperature cycling, HTRB, and UIS stress per JEDEC JESD22-A108
Low Crss/Ciss ratio	0.0023 prevents false turn-on during high dv/dt commutation in bidirectional CLLLC resonant converters

Applications

On-Board Charger (OBC)

Isolated DC/DC Converter

Use Scenario: 11 kW bidirectional OBC in BEV using dual-phase interleaved totem-pole PFC and phase-shifted full-bridge LLC.

IC Role / Device Role / Timing Role: High-side switching device in totem-pole PFC stage operating at 100–200 kHz with zero-voltage switching.

Use Value: 60 mΩ R_DS(on) and 97 µJ total switching energy reduce conduction + switching losses by 22% vs Si IGBT, enabling >96% peak efficiency.

Use Scenario: 3.3 kW auxiliary DC/DC converter stepping down 800 V battery to 48 V for ADAS domain controllers.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with synchronous rectification on secondary side.

Use Value: 1.5 µs short-circuit withstand time and 7.07 mm creepage ensure functional safety compliance (ISO 26262 ASIL-B) under fault conditions.

Auxiliary Traction Inverter

High-Voltage Battery Management System

Use Scenario: 10 kW auxiliary inverter powering HVAC compressor and steering pump in 800 V architecture.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 12 kHz with active short-circuit protection.

Use Value: Unipolar 20 V gate drive simplifies isolated gate driver design and eliminates negative bias circuitry, cutting BOM cost by $1.20/unit.

Use Scenario: High-side isolation switch in HV battery disconnect unit (BDU) with contactor bypass and pre-charge function.

IC Role / Device Role / Timing Role: Solid-state main contactor replacement enabling sub-100 µs fault isolation response.

Use Value: 1200 V V_DSS and AEC-Q101 qualification support 1000-cycle lifetime at 800 V DC with <0.1% failure-in-time (FIT).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K	R_DS(on) = 65 mΩ, same 1200 V rating, no Kelvin source, TO247-3L package	Lacks sense pin; requires higher gate resistance (≥5 Ω) to stabilize switching; unsuitable for >150 kHz hard-switched PFC	Select only when Kelvin source is unnecessary and gate drive simplicity outweighs 8% higher conduction loss
IXFH40N120X	1200 V Si IGBT, 40 A, 2.2 V V_CE(sat), TO247 package, no Kelvin option	Higher switching loss (E_on+E_off ≈ 1.2 mJ), limited to ≤40 kHz; requires negative gate bias for robustness	Choose only for cost-sensitive 10–20 kHz industrial DC/DC where thermal budget permits larger heatsinks

Compared with C3M0065120K and IXFH40N120X, AIMZHN120R060M1TXKSA1 delivers superior power density via Kelvin-source–enabled fast switching, lower R_DS(on), and AEC-Q101 validation-making it the sole choice for automotive 800 V OBCs requiring ASIL-B compliance and >95% efficiency.

Availability

AIMZHN120R060M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, isolated DC/DC converters, and auxiliary traction inverters requiring stable component supply across automotive production ramps and industrial EV infrastructure programs.

Supply support for AIMZHN120R060M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

This part belongs to the CoolSiC™ 1200 V trench MOSFET product line, engineered specifically for high-efficiency, high-power-density 800 V electric vehicle architectures including bidirectional OBCs and auxiliary inverters.

FAQ

What gate driver voltage is required for reliable operation?

AIMZHN120R060M1TXKSA1 requires a nominal +20 V turn-on voltage and 0 V turn-off voltage. The device is not rated for 15 V logic-level drive; using ≤18 V increases R_DS(on) by up to 8% and reduces short-circuit withstand time from 1.5 µs to 2.5 µs, risking failure under fault conditions.

Does this MOSFET include an integrated body diode, and what is its reverse recovery performance?

Yes-it features a monolithic SiC body diode with V_SD = 3.9 V at 13 A and 25°C. Its reverse recovery charge Q_fr is 155 nC at 25°C, significantly lower than Si counterparts, enabling zero-current switching in resonant topologies without external anti-parallel diodes.

How does the Kelvin source pin affect PCB layout and gate driver design?

The Kelvin source pin must be routed separately from the main source power plane and directly tied to the gate driver's source reference node. This breaks the common-source inductance path, preventing voltage spikes that distort gate waveforms-critical for achieving specified 9 ns turn-on delay and stable 20 V gate control.

Is this part qualified for automotive use, and which AEC standard applies?

Yes-AIMZHN120R060M1TXKSA1 is qualified per AEC-Q101 for discrete semiconductors, covering stress tests including HTGB, H3TRB, and UIS. It is not AEC-Q100 (for ICs); qualification confirms suitability for automotive powertrain and charging systems up to 175°C junction temperature.

AIMZHN120R060M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 13A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 4.3mA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 197W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-14

AIMZHN120R060M1TXKSA1 FAQ

1.How can I place an order for AIMZHN120R060M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZHN120R060M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZHN120R060M1TXKSA1 reliable?

The price and inventory of AIMZHN120R060M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZHN120R060M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZHN120R060M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZHN120R060M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZHN120R060M1TXKSA1?

AIMZHN120R060M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZHN120R060M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZHN120R060M1TXKSA1?

For technical support, including AIMZHN120R060M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZHN120R060M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZHN120R060M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZHN120R060M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZHN120R060M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZHN120R060M1TXKSA1?

All AIMZHN120R060M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZHN120R060M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZHN120R060M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZHN120R060M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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