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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N08S403ATMA1

Name: IPB120N08S403ATMA1
Brand: Infineon Technologies
SKU: IPB120N08S403ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N08S403ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N08S403ATMA1.pdf

Description:: MOSFET N-CH 80V 120A TO263-3

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Product details

Overview

IPB120N08S403ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 80 V V_DS, 2.5 mΩ max R_DS(on) at 10 V V_GS, 120 A continuous drain current, and 175 °C operating temperature - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB120N08S403ATMA1 datasheet, IPB120N08S403ATMA1 pinout, IPB120N08S403ATMA1 application, or IPB120N08S403ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, single-pulse avalanche energy (920 mJ), thermal resistance (0.54 K/W), diode forward voltage (0.9–1.3 V), and gate charge (128–167 nC).

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with controlled EMI. Its 2.1–2.5 mΩ R_DS(on) (SMD version) and 177–354 pF Crss support high-efficiency 48 V/12 V bidirectional DC-DC conversion.

The integrated body diode features 160 nC Q_rr and 80 ns t_rr at 50 A/100 A/µs, enabling synchronous rectification without external Schottky replacement in automotive buck-boost stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V automotive systems with 67 % safety margin against transients up to ISO 7637-2 Pulse 5a.
R_DS(on) max	2.5 mΩ @ V_GS=10 V, I_D=100 A - enables <1.2 W conduction loss at 120 A in SMD layout with minimal heatsink.
I_D continuous	120 A @ T_C=25 °C - sustained output for 5 kW traction inverters or 3 kW on-board chargers.
E_AS	920 mJ @ I_D=60 A - withstands repetitive load dump and inductive turn-off events without failure.
Q_g	128–167 nC - determines gate driver power requirement (~1.7 W avg at 100 kHz, 10 V swing).
t_r/t_f	15 ns / 50 ns - enables <200 ns total switching time for >200 kHz hard-switched operation.
V_GS(th)	2.0–4.0 V - ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

IPB120N08S403ATMA1 uses PG-TO263-3-2 (D²PAK) thermally enhanced surface-mount package with isolated drain tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts 0–10 V logic signal; requires 128–167 nC charge for full enhancement; sensitive to ESD (±20 V rating).
Pin 2 (Drain)	High-side power path	Exposed copper tab - primary thermal path to PCB; must be soldered to ≥6 cm² 70 µm copper for R_thJA=40 K/W.
Pin 3 (Source)	Reference node	Common return for gate drive and load current; connects to low-side shunt or controller ground plane.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use up to 175 °C junction temperature and 1000-cycle temperature cycling.
100 % avalanche tested	Each unit passes single-pulse avalanche stress test at 60 A, ensuring robustness in inductive switching faults.
Low Crss (177–354 pF)	Reduces Miller-induced shoot-through risk and enables stable paralleling of multiple devices in high-current modules.
Integrated body diode	120 A continuous / 480 A pulsed capability with 0.9–1.3 V V_SD supports freewheeling in half-bridge configurations without external diodes.
MSL1 reflow rating	Suitable for lead-free reflow up to 260 °C peak, compatible with standard automotive PCB assembly processes.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous switch handling 120 A continuous current with <2.5 mΩ on-resistance.

Use Value: Enables >97 % peak efficiency at 3 kW output while maintaining <100 °C case temperature on 6 cm² copper.

Use Scenario: Three-phase inverter driving 1.5 kW brushless motor in column-assist EPS.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack inverter with 20 kHz PWM and 50 ns dead-time.

Use Value: 15 ns rise time and 50 ns fall time minimize switching losses during rapid torque transients.

On-Board Charger (OBC) PFC Stage

Traction Inverter Half-Bridge

Use Scenario: Boost PFC stage converting AC input to 400 V DC bus in 6.6 kW OBC.

IC Role / Device Role / Timing Role: Fast-switching MOSFET with 8884–11550 pF C_iss and 128–167 nC Q_g.

Use Value: Low Q_gd/Q_gs ratio (0.5–1.3) improves controllability during zero-voltage switching transitions.

Use Scenario: 120 kW traction inverter using parallel IPB120N08S403ATMA1 devices per phase leg.

IC Role / Device Role / Timing Role: High-current, high-reliability switching cell with 920 mJ single-pulse avalanche rating.

Use Value: 0.54 K/W R_thJC allows direct thermal coupling to cold plate, supporting 245 A peak current at 25 °C case.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120N08S4-03	Same die, TO-220-3-1 through-hole package; R_thJC = 0.54 K/W but higher R_thJA (62 K/W).	Preferred for prototyping or low-volume industrial SMPS where manual soldering is acceptable.	Select when board space permits larger footprint and thermal management relies on heatsink rather than PCB copper.
IPI120N08S4-03	Same die, TO-262-3-1 package; identical R_thJC but no isolated tab - requires insulating mounting hardware.	Suitable for legacy automotive modules with existing TO-262 mechanical interfaces and isolation requirements.	Choose only if mechanical compatibility with existing TO-262 sockets or clamping fixtures is mandatory.

Compared with IPP120N08S4-03 and IPI120N08S4-03, IPB120N08S403ATMA1 delivers superior thermal performance in automated SMT lines via its isolated D²PAK drain tab and optimized 6 cm² PCB cooling, reducing system-level heatsink mass by ~40 % in high-power DC-DC designs.

Availability

IPB120N08S403ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and on-board chargers requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for IPB120N08S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-temperature automotive power conversion where low R_DS(on), robust avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB120N08S403ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive range is 0–10 V for full enhancement; gate drivers must limit overshoot to ≤12 V during switching transients to ensure long-term reliability under automotive load dump conditions.

Does IPB120N08S403ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz switching at 120 A, a 3.5 Ω resistor is validated in the datasheet to achieve optimal t_r/t_f balance and minimize EMI. Lower values increase switching speed but raise gate driver stress; higher values reduce ringing but increase switching losses.

Can IPB120N08S403ATMA1 be paralleled with other units for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) and low Crss enable stable current sharing. Layout must ensure matched gate loop inductance (<10 nH difference) and symmetric source inductance; thermal coupling via shared copper area is recommended to maintain <5 °C inter-device ΔT at full load.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - with 80 ns t_rr and 160 nC Q_rr at 50 A/100 A/µs, it performs reliably in synchronous buck topologies up to 200 kHz. However, for >300 kHz operation or ultra-low V_SD requirements, external SiC Schottky diodes remain preferred due to near-zero Q_rr.

IPB120N08S403ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 223µA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB120N08S403ATMA1 FAQ

1.How can I place an order for IPB120N08S403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N08S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N08S403ATMA1 reliable?

The price and inventory of IPB120N08S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N08S403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N08S403ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N08S403ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N08S403ATMA1?

IPB120N08S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N08S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N08S403ATMA1?

For technical support, including IPB120N08S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N08S403ATMA1 requirements.

6.How does Aetrix verify that IPB120N08S403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N08S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N08S403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N08S403ATMA1?

All IPB120N08S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N08S403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N08S403ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N08S403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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