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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180N04S302ATMA1

Name: IPB180N04S302ATMA1
Brand: Infineon Technologies
SKU: IPB180N04S302ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180N04S302ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180N04S302ATMA1.pdf

Description:: MOSFET N-CH 40V 180A TO263-7

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Product details

Overview

IPB180N04S302ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 1.5 mΩ R_DS(on) at 10 V V_GS, and 180 A continuous drain current at T_C = 25 °C. It delivers ultra-low conduction loss in high-current DC/DC converters and motor control stages for EV traction inverters and 48 V mild-hybrid systems.

For engineers reviewing the IPB180N04S302ATMA1 datasheet, IPB180N04S302ATMA1 pinout, IPB180N04S302ATMA1 application, or IPB180N04S302ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, 100% avalanche-tested ruggedness, and thermal resistance of 0.5 K/W (junction-to-case), critical for thermally constrained power stage designs.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit in high-frequency switching applications. Its gate plateau voltage is 5.0 V, enabling robust drive margin with standard 5 V or 3.3 V logic-level controllers when used with appropriate gate drivers.

The integrated body diode exhibits 0.83–1.3 V forward voltage at 80 A and 25 °C, with 70 ns reverse recovery time and 145 nC Q_rr, supporting synchronous rectification and hard-switched topologies where diode recovery behavior directly impacts EMI and switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V automotive battery rail protection and motor phase-leg switching.
R_DS(on)	1.5 mΩ max @ V_GS = 10 V, I_D = 80 A - Enables <1.2 W conduction loss at 80 A, reducing heatsink requirements.
I_D (cont.)	180 A @ T_C = 25 °C - Supports high-current power stages without parallel devices in compact inverters.
E_AS	1880 mJ @ I_D = 80 A - Confirmed single-pulse avalanche energy ensures reliability under inductive load turn-off stress.
R_thJC	0.5 K/W - Allows precise junction temperature estimation using case temperature measurement in production thermal management.
Q_g	210 nC max - Determines gate driver peak current requirement (~2.5 A for 80 ns rise time with 1.3 Ω gate resistor).
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with 5 V microcontroller outputs while avoiding spurious conduction at elevated temperatures.

Pinout & Package

IPB180N04S302ATMA1 is housed in PG-TO263-7-3 (D²PAK-7) surface-mount package with exposed drain pad for thermal performance. Pin 1–3 are source terminals; Pin 4 is gate; Pins 5–7 are additional source/drain connections optimized for low-inductance high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source / Drain (exposed pad)	Multiple parallel source and drain terminals reduce bondwire inductance and improve current sharing; exposed drain pad provides primary thermal path to PCB copper.
4	Gate	Single gate input with 20 V absolute maximum rating; requires stable 10 V drive for specified R_DS(on) and switching speed.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at rated I_D and V_DS, ensuring robustness against inductive switching faults.
MSL1 up to 260 °C	Compatible with lead-free reflow soldering processes without popcorn or delamination risk.
175 °C operating temperature	Enables operation in engine bay environments and high-power-density modules without derating at ambient >125 °C.
Green RoHS-compliant package	Halogen-free molding compound and lead-free terminations meet EU Directive 2011/65/EU and automotive ELV requirements.

Applications

Automotive Traction Inverter

48 V Mild-Hybrid DC/DC Converter

Use Scenario: High-efficiency bidirectional power conversion between 48 V Li-ion battery and 12 V auxiliary system in P0/P1 hybrid architectures.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck-boost topology operating at 100–200 kHz with forced-air cooling.

Use Value: 1.5 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 3.2 mΩ MOSFETs, enabling >96% peak efficiency at 5 kW output.

Use Scenario: Phase-leg switching in 48 V–12 V bi-directional converter for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: High-current half-bridge switch with fast 19 ns rise time and 18 ns fall time for minimal dead-time loss.

Use Value: 70 ns t_rr and 145 nC Q_rr minimize diode reverse recovery loss, reducing EMI filter size and improving light-load efficiency.

EV Onboard Charger (OBC)

Industrial Motor Drive

Use Scenario: Primary-side switching in LLC resonant converter for AC/DC conversion in 6.6 kW OBC units.

IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) hard-switched MOSFET with low C_oss (3.9 nF max) and Crss (0.71 nF max).

Use Value: 11,000–14,300 pF C_iss enables predictable gate drive design; low Crss minimizes Miller-induced shoot-through risk.

Use Scenario: Three-phase inverter stage for 15–30 kW servo drives in factory automation.

IC Role / Device Role / Timing Role: 180 A continuous-rated switch with 0.5 K/W R_thJC mounted on liquid-cooled cold plate.

Use Value: 1880 mJ E_AS withstands motor stall and short-circuit events without failure, eliminating need for external crowbar protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	R_DS(on) = 1.4 mΩ (typ), V_DS = 40 V, but Q_g = 240 nC (max) - 14% higher gate charge.	Same AEC-Q101 qualification and TO-263-7 package; slightly higher switching loss at >150 kHz.	Select when lower R_DS(on) is prioritized over gate drive strength and layout simplicity.
IXTH180N04S5	Non-automotive grade; R_DS(on) = 1.6 mΩ (max); no AEC-Q101 or MSL1 certification.	Approved only for industrial/commercial use; not suitable for safety-critical automotive ECUs or inverters.	Consider only for cost-sensitive non-automotive motor drives where qualification compliance is not required.

Compared with STL220N4LF8AG and IXTH180N04S5, IPB180N04S302ATMA1 offers the best balance of automotive qualification, thermal performance (0.5 K/W), and proven avalanche ruggedness - making it the preferred choice for production-grade 48 V and traction power stages requiring zero field failure risk.

Availability

IPB180N04S302ATMA1 is available at Aetrix Electronics and suitable for automotive traction inverters, 48 V mild-hybrid DC/DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPB180N04S302ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-reliability automotive power conversion applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

Is IPB180N04S302ATMA1 pin-compatible with earlier IPB180N04S3-02 revisions?

Yes - IPB180N04S302ATMA1 is the tape-and-reel packaging variant of the same die and package as IPB180N04S3-02, with identical pinout, electrical characteristics, and thermal performance. The "ATMA1" suffix denotes packaging format only, not functional revision.

What is the recommended gate resistor value for 100 kHz switching in a half-bridge configuration?

For 100 kHz operation with 10 V gate drive and 80 A load, a 1.3 Ω gate resistor is validated in Infineon's ANPS071E to achieve ~35 ns turn-on delay and ~19 ns rise time while limiting peak gate current to ~7.7 A, balancing switching speed and EMI.

Does this MOSFET require a negative gate turn-off voltage to prevent shoot-through?

No - the device's V_GS(th) range (2.1–4.0 V) and low Crss (470–710 pF) allow safe operation with 0 V turn-off in well-designed gate drivers; negative bias is unnecessary unless operating near maximum dV/dt (>50 V/ns) in high-noise environments.

Can IPB180N04S302ATMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical thermal coupling; derating to 150 A per device is recommended for long-term reliability in parallel arrays.

IPB180N04S302ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB180N04S302ATMA1 FAQ

1.How can I place an order for IPB180N04S302ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N04S302ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N04S302ATMA1 reliable?

The price and inventory of IPB180N04S302ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N04S302ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180N04S302ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N04S302ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N04S302ATMA1?

IPB180N04S302ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N04S302ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N04S302ATMA1?

For technical support, including IPB180N04S302ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N04S302ATMA1 requirements.

6.How does Aetrix verify that IPB180N04S302ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180N04S302ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N04S302ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180N04S302ATMA1?

All IPB180N04S302ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N04S302ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N04S302ATMA1 part is unused and in its original packaging.

Return procedure for IPB180N04S302ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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