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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF5210STRL

Name: AUIRF5210STRL
Brand: Infineon Technologies
SKU: AUIRF5210STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF5210STRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF5210STRL.pdf

Description:: MOSFET P-CH 100V 38A D2PAK

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Product details

Overview

AUIRF5210STRL from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET in D2PAK (TO-263AB) package, rated for -100V V_BRDSS, 60 mΩ R_DS(on) at -10V V_GS, and -38A continuous drain current at T_C = 25°C. It features full avalanche rating, fast switching (t_r = 63 ns), and dynamic dv/dt capability (-7.4 V/ns), enabling robust high-side switching in 12V/24V automotive power systems.

For engineers reviewing the AUIRF5210STRL datasheet, AUIRF5210STRL pinout, AUIRF5210STRL application, or AUIRF5210STRL equivalent, this part supports critical design tasks including high-side load switching, motor control H-bridge upper-leg operation, and reverse polarity protection - all requiring validated -100V blocking, low conduction loss, and rugged unclamped inductive switching performance.

Technical Context

This P-channel MOSFET operates as a high-side switch in automotive power distribution networks, where gate drive is referenced to the source and requires negative V_GS for turn-on. Its cellular HEXFET structure delivers ultra-low on-resistance per die area while maintaining thermal robustness up to T_J = 150°C.

The device is fully avalanche-rated with E_AS = 120 mJ (single-pulse) and supports repetitive avalanche up to T_Jmax; its body diode exhibits t_rr = 170–260 ns and Q_rr = 1180–1770 nC, making it suitable for synchronous rectification and inductive load commutation without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-100 V - Blocks full automotive battery transients including load dump (ISO 7637-2 Pulse 5a) without breakdown.
R_DS(on)	60 mΩ max @ -10V V_GS, -38A - Enables ≤2.3 W conduction loss at rated current, reducing heatsink requirements.
I_D (continuous)	-38 A @ T_C = 25°C - Supports high-current solenoid, fan, and heater drivers in engine bay environments.
E_AS	120 mJ - Withstands unclamped inductive energy from relay or motor turn-off without failure.
t_r/t_f	63 ns / 55 ns - Enables >100 kHz PWM switching in DC-DC converters and motor phase control.
dv/dt rating	-7.4 V/ns - Resists false turn-on during fast voltage transients in noisy automotive harnesses.
Q_g	150–230 nC - Defines gate drive strength requirement; compatible with standard automotive gate drivers (e.g., TLE7183).

Pinout & Package

Package: D2PAK (TO-263AB), surface-mount, single-ended heat sink interface via exposed drain pad. Thermal resistance R_θJC = 0.75°C/W enables direct PCB copper thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to load supply rail; electrically and thermally tied to large copper pour for heat dissipation.
Source (S)	Reference node for gate drive and current return	Serves as high-side switch common point; gate drive must be referenced to this node.
Gate (G)	Control input for channel modulation	Requires negative voltage relative to source (≤ -10V) for full enhancement; sensitive to ESD (±20V absolute max).

Key Features

Feature	Design Value
P-channel architecture	Enables high-side switching without level-shifting gate drivers in 12V/24V systems.
Ultra-low R_DS(on)	60 mΩ ensures <2.3 W conduction loss at -38A, minimizing thermal stress in confined engine compartments.
Full avalanche rating	120 mJ single-pulse and repetitive avalanche up to T_Jmax allow safe operation under inductive load interruption.
Automotive qualification	AEC-Q101 qualified per Infineon's automotive standards, supporting 15-year vehicle lifecycle reliability.
Dynamic dv/dt immunity	-7.4 V/ns rating prevents spurious turn-on during fast bus transients (e.g., alternator load dump).

Applications

Engine Control Module (ECM) Load Switching

Automotive HVAC Blower Motor Control

Use Scenario: High-side switching of fuel injector drivers and solenoid valves in engine management units.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as high-side power switch, controlled by microcontroller GPIO with dedicated gate driver.

Use Value: -100V rating withstands ISO 7637-2 load dump pulses; 60 mΩ R_DS(on) limits self-heating during sustained 30A peak loads.

Use Scenario: Controlling 24V blower motor speed via PWM in climate control systems.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration, synchronized with N-channel low-side device.

Use Value: Fast 63 ns rise time supports 20–50 kHz PWM; body diode t_rr < 260 ns minimizes shoot-through risk during dead-time transitions.

Reverse Polarity Protection

Commercial Vehicle Lighting Control

Use Scenario: Preventing damage from incorrect battery connection in telematics and ADAS modules.

IC Role / Device Role / Timing Role: Series P-MOSFET placed between battery input and system ground return path.

Use Value: Low 60 mΩ on-resistance adds <100 mV drop at 1.5A standby current; -100V rating covers jump-start surges.

Use Scenario: Switching LED headlamp arrays and fog lights in heavy-duty trucks.

IC Role / Device Role / Timing Role: High-side switch managing up to 38A steady-state current for multi-string LED loads.

Use Value: Fully avalanche-rated design absorbs inductive kickback from relay-based lamp control; AEC-Q101 qualification ensures vibration and thermal cycling endurance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100P06	-60V V_BRDSS, 10 mΩ R_DS(on), TO-220 package	Limited to 12V systems; lacks automotive qualification and avalanche rating	Select only for non-automotive 12V industrial controls with lower voltage stress.
IRF9540NPbF	-100V V_BRDSS, 200 mΩ R_DS(on), TO-220 package	Higher conduction loss; no AEC-Q101 qualification; slower switching (t_r = 100 ns)	Acceptable for cost-sensitive legacy designs where thermal margin exists and automotive compliance is not required.

Compared with STP100P06 and IRF9540NPbF, AUIRF5210STRL uniquely combines -100V rating, 60 mΩ on-resistance, AEC-Q101 qualification, and full avalanche capability in a thermally efficient D2PAK package - making it the only choice for new automotive high-side switching designs demanding reliability, efficiency, and transient robustness.

Availability

AUIRF5210STRL is available at Aetrix Electronics and suitable for engine control modules, HVAC motor drives, reverse polarity protection circuits, and commercial vehicle lighting systems requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRF5210STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRF5210STRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh automotive environments including engine compartments and chassis-mounted ECUs.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The AUIRF5210STRL has a maximum operating junction temperature of +150°C. At T_C = 100°C, its continuous drain current drops to -24A due to thermal derating (1.3 W/°C). This reflects real-world thermal constraints in sealed enclosures - designers must ensure case temperature stays below 100°C to maintain full -38A rating, typically via ≥25 cm² 2-oz copper pad and minimal thermal interface resistance.

Is a gate resistor required, and what value is recommended for automotive PWM operation?

Yes - a gate resistor is required to control dv/dt and prevent oscillation. For 20–50 kHz PWM in automotive motor control, a 10 Ω to 22 Ω resistor between driver output and gate is recommended. This balances switching speed (minimizing t_r/t_f) against EMI and gate ringing, especially given the device's 230 nC total gate charge and 4.5 nH internal drain inductance.

Can AUIRF5210STRL replace N-channel MOSFETs in high-side configurations?

No - it cannot directly replace N-channel devices without circuit redesign. As a P-channel MOSFET, it requires negative gate-to-source voltage for turn-on, whereas N-channel high-side switches need bootstrapped or isolated gate drivers. Its use eliminates level-shifting complexity but mandates gate drive referenced to the source node, which changes PCB layout and driver selection.

Does the body diode support continuous bidirectional current in H-bridge applications?

The integrated body diode supports reverse current up to -38A continuously and -140A pulsed, but its forward voltage is -1.6V at -23A and recovery time is 170–260 ns. In H-bridge motor control, it conducts freewheeling current during off-time; however, for high-efficiency or high-frequency (>20 kHz) operation, an external Schottky diode may be added in parallel to reduce conduction loss and improve recovery behavior.

AUIRF5210STRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRF5210STRL FAQ

1.How can I place an order for AUIRF5210STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF5210STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF5210STRL reliable?

The price and inventory of AUIRF5210STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF5210STRL is usually 5 days.

3.What payment methods are accepted for AUIRF5210STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF5210STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF5210STRL?

AUIRF5210STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF5210STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF5210STRL?

For technical support, including AUIRF5210STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF5210STRL requirements.

6.How does Aetrix verify that AUIRF5210STRL is sourced from the original manufacturer or authorized distributors?

All AUIRF5210STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF5210STRL meets industry standards.

7.What is the process for return or replacement of AUIRF5210STRL?

All AUIRF5210STRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF5210STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF5210STRL part is unused and in its original packaging.

Return procedure for AUIRF5210STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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