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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFL4315

Name: IRFL4315
Brand: Infineon Technologies
SKU: IRFL4315
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL4315

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL4315.pdf

Description:: MOSFET N-CH 150V 2.6A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL4315PbF from Infineon Technologies (formerly International Rectifier) is a 150 V, 2.6 A N-channel enhancement-mode Power MOSFET in SOT-223 package, optimized for high-frequency DC–DC converters. It features 185 mΩ R_DS(on) at V_GS = 10 V, 12 nC typical total gate charge, and fully characterized effective output capacitance (C_oss-eff = 98 pF) to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRFL4315 datasheet, IRFL4315 pinout, IRFL4315 application, or IRFL4315 equivalent, key selection criteria include its low Q_gd/Q_g ratio (0.57), avalanche-rated operation (E_AS = 38 mJ), body diode reverse recovery performance (t_rr = 61–91 ns), and thermal resistance (R_θJA = 45 °C/W on PCB mount).

Technical Context

This MOSFET employs planar HEXFET® technology with optimized channel geometry to minimize switching losses in hard-switched topologies. Its low gate-to-drain charge (Q_gd = 6.8–10 nC) reduces Miller-induced turn-off delay, while the fully characterized C_oss vs. V_DS curve enables accurate zero-voltage switching (ZVS) timing prediction in LLC and phase-shifted full-bridge designs.

The device is specified for industrial-grade operation (−55 °C to +150 °C T_J) and supports unclamped inductive switching up to I_AS = 3.1 A. Its body diode exhibits low forward voltage (V_SD = 1.5 V at I_S = 2.1 A, T_J = 25 °C) and controlled reverse recovery (Q_rr = 160–240 nC), enabling synchronous rectification replacement in low-power isolated converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Supports 120 VAC input-derived bus rails with 25% margin for line surges and ringing.
R_DS(on) max	185 mΩ @ V_GS = 10 V - Enables <2.6 A continuous conduction with ≤0.5 W conduction loss at 25 °C ambient.
Q_g typ	12 nC - Requires ≤120 µC gate drive charge per million cycles at 100 kHz, reducing driver power demand.
C_oss-eff	98 pF - Matches actual energy stored in output capacitance during 0–120 V transitions, critical for ZVS dead-time calculation.
E_AS	38 mJ - Withstands single-pulse inductive energy transients without failure, eliminating need for external clamping in low-energy flybacks.
t_r/t_f	21 ns / 19 ns - Enables clean 100+ kHz switching with minimal overlap loss when driven by 15 Ω source/sink impedance.
R_θJA	45 °C/W - Limits junction rise to ≤112.5 °C at 2.5 W dissipation on standard 1-inch² copper PCB, supporting derated 2.1 A operation at 70 °C ambient.

Pinout & Package

IRFL4315PbF is housed in a surface-mount SOT-223 package with exposed drain pad for thermal enhancement. The package measures 7.55 × 6.90 × 1.85 mm (L × W × H) and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Internally connected to substrate; must be routed to low-impedance ground plane to minimize switching noise coupling.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring RC snubber (e.g., 10 Ω + 100 pF) near package to suppress dv/dt-induced false turn-on.
Pin 3 (Drain)	Main power output node	Exposed metal tab - electrically tied to drain; must be soldered to large copper pour for thermal and EMI control.
Pin 4 (Source, redundant)	Secondary source connection	Parallel path to Pin 1; improves current sharing and reduces source inductance in high-di/dt applications.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.57 - Reduces Miller plateau duration, enabling faster turn-off and tighter PWM dead-time control.
Fully characterized C_oss(V_DS)	Validated down to 1 V V_DS - Allows precise modeling of soft-switching behavior in QR flyback and active clamp topologies.
Avalanche-rated operation	Specified E_AS and I_AR - Permits reliable operation under inductive fault conditions without external protection components.
Lead-free (PbF) construction	RoHS-compliant finish with SnAgCu plating - Ensures compatibility with lead-free reflow and long-term reliability in industrial environments.
Body diode t_rr spec	61–91 ns with defined di/dt - Enables predictable commutation timing in synchronous buck or half-bridge configurations.

Applications

AC–DC Adapter Secondary Side

Isolated DC–DC Converter Primary Switch

Use Scenario: 5–24 W offline adapter using QR flyback topology with 120 VAC input.

IC Role / Device Role / Timing Role: Primary-side switching element operating at 65–130 kHz with ZVS-assisted turn-on.

Use Value: Low C_oss-eff (98 pF) ensures consistent ZVS across line/load range, reducing EMI and improving efficiency by ≥0.8% at full load.

Use Scenario: 12 V input to 5 V/3.3 V isolated supply for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch in push-pull or half-bridge configuration driving center-tapped transformer.

Use Value: Avalanche rating (38 mJ) eliminates need for external RCD clamp, simplifying BOM and board layout while maintaining 10-year field reliability.

USB PD Power Delivery Module

Smart Home Energy Monitor Power Stage

Use Scenario: 20–60 W GaN-assisted hybrid controller where IRFL4315 serves as synchronous rectifier driver FET.

IC Role / Device Role / Timing Role: Gate driver for secondary-side GaN HEMT, leveraging fast t_r/t_f (21/19 ns) and low Q_g.

Use Value: 12 nC Q_g allows direct drive from microcontroller GPIO with <1 µs propagation delay, reducing component count versus dedicated drivers.

Use Scenario: Isolated sensor node powered by 24 VDC rail with integrated current sensing and relay control.

IC Role / Device Role / Timing Role: Load switch for 24 V auxiliary rail, handling inrush and short-circuit events.

Use Value: Specified I_AR = 3.1 A and t_rr = 61 ns enable robust fault clearing without latch-up, meeting IEC 61000-4-5 surge immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DSS, 1 A I_D, 12 Ω R_DS(on) - higher voltage rating but lower current and much higher on-resistance.	Designed for universal-input SMPS (>265 VAC), not optimized for 120 VAC or low-loss DC–DC stages.	Select only if system requires >300 V blocking capability; avoid for 150 V-class designs due to excessive conduction loss.
DMN2004LK-7	20 V V_DSS, 4.2 A I_D, 32 mΩ R_DS(on) - lower voltage, higher current, significantly lower on-resistance.	Targeted at battery-powered DC–DC (e.g., USB-C PD sink), not mains-referenced topologies.	Use only in sub-24 V systems; incompatible with 120 VAC-derived buses due to catastrophic breakdown risk.

Compared with STP1NK60Z and DMN2004LK-7, IRFL4315 occupies a unique niche: it delivers optimal balance of 150 V blocking, 2.6 A current, and 185 mΩ R_DS(on) for cost-sensitive, thermally constrained 10–30 W industrial DC–DC converters where both voltage margin and conduction efficiency matter.

Availability

IRFL4315PbF is available at Aetrix Electronics and suitable for AC–DC adapters, isolated DC–DC converters, USB PD auxiliary power stages, and smart home energy monitor power switches requiring stable component supply and industrial temperature support.

Supply support for IRFL4315PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFL4315 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-frequency, space-constrained industrial power conversion where thermal performance, avalanche ruggedness, and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRFL4315PbF supports 2.1 A continuous drain current at T_A = 70 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (R_θJA = 45 °C/W) and ensures junction temperature remains below 150 °C under typical PCB mounting conditions.

Does the device have a specified body diode reverse recovery charge?

Yes - Q_rr is specified as 160–240 nC at T_J = 25 °C, I_F = 1.6 A, and di/dt = 100 A/µs. This value is measured under controlled conditions and enables accurate loss estimation in synchronous rectifier or freewheeling diode applications.

Can IRFL4315PbF be used in linear regulator applications?

No - it is not characterized for linear-mode operation. The Safe Operating Area (SOA) graph shows limited capability beyond 100 µs pulses, and R_DS(on) variation with temperature (Fig. 4) introduces instability in precision regulation. Use only in switched-mode topologies.

Is the SOT-223 package lead-free and RoHS compliant?

Yes - the "PbF" suffix confirms lead-free termination with SnAgCu alloy, fully compliant with RoHS Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard Pb-free reflow profiles up to 260 °C peak.

IRFL4315 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL4315 FAQ

1.How can I place an order for IRFL4315 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL4315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL4315 reliable?

The price and inventory of IRFL4315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL4315 is usually 5 days.

3.What payment methods are accepted for IRFL4315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL4315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL4315?

IRFL4315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL4315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL4315?

For technical support, including IRFL4315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL4315 requirements.

6.How does Aetrix verify that IRFL4315 is sourced from the original manufacturer or authorized distributors?

All IRFL4315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL4315 meets industry standards.

7.What is the process for return or replacement of IRFL4315?

All IRFL4315 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL4315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL4315 part is unused and in its original packaging.

Return procedure for IRFL4315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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