Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML2502TR

Name: IRLML2502TR
Brand: Infineon Technologies
SKU: IRLML2502TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLML2502TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML2502TR.pdf

Description:: MOSFET N-CH 20V 4.2A SOT-23

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,525

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLML2502TR from Infineon Technologies (formerly International Rectifier) is an N-Channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for 20 V V_DS, 4.2 A continuous drain current at 25°C, 0.045 Ω R_DS(on) at V_GS = 4.5 V, and optimized for low-voltage battery management and load switching in space-constrained portable electronics.

For engineers reviewing the IRLML2502TR datasheet, IRLML2502TR pinout, IRLML2502TR application, or IRLML2502TR equivalent, key selection criteria include its ultra-low on-resistance at logic-level gate drive, thermally enhanced SOT-23 footprint (<1.1 mm height), fast switching (t_r = 10 ns, t_f = 26 ns), and rugged body diode with 16 ns reverse recovery time.

Technical Context

This device operates as a single N-channel power switch with enhancement-mode threshold (V_GS(th) = 0.6–1.2 V), designed for synchronous rectification and high-side/low-side load control in DC-DC converters and USB power switches. Its gate charge profile (Q_g = 8.0–12 nC, Q_gd = 1.7–2.6 nC) supports efficient 1–5 MHz switching under 4.5 V gate drive.

The integrated body diode exhibits V_SD = 1.2 V at 1.3 A and Q_rr = 8.6–13 nC, enabling use in flyback and buck topologies without external diode replacement. Thermal design leverages R_θJA = 75–100 °C/W on FR-4, with junction temperature range of –55 to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 3.3 V/5 V system rail protection and battery disconnect
R_DS(on)	0.045 Ω @ V_GS = 4.5 V - Enables <190 mW conduction loss at 4.2 A, critical for thermal budget in thin PCBs
I_D (25°C)	4.2 A - Continuous current capability sufficient for USB PD 3.0 load switches and PMIC output stages
Q_g	8.0–12 nC - Low gate charge allows fast turn-on with minimal driver strength (e.g., GPIO-driven)
t_r/t_f	10 ns / 26 ns - Supports high-frequency switching (>1 MHz) with reduced switching losses in compact DC-DC designs
V_GS(th)	0.6–1.2 V - Ensures full enhancement with 1.8 V/3.3 V logic-level microcontrollers
T_J Range	–55 to +150 °C - Qualified for industrial and extended-temperature portable applications

Pinout & Package

IRLML2502TR uses the Micro3™ package - a thermally enhanced variant of SOT-23 with exposed drain pad for improved heat dissipation. Package dimensions: 2.67–3.05 mm × 1.20–1.40 mm × <1.1 mm height, compatible with standard SOT-23 pick-and-place equipment.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Accepts logic-level voltage (0.6–12 V); requires no external level shifter for 3.3 V MCU interfaces
2 - Source	Current return path	Internally connected to substrate; serves as reference node for gate drive and current sensing
3 - Drain	Power output terminal	Exposed metal pad on bottom surface - primary thermal path to PCB copper; must be soldered to thermal pad

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.045 Ω @ 4.5 V enables <200 mW loss at full rated current - reduces need for heatsinking in handheld devices
Logic-level gate drive	V_GS(th) max 1.2 V ensures reliable turn-on with 1.8 V/3.3 V I/O - eliminates gate driver IC in many portable designs
Micro3™ package	SOT-23 footprint with thermal pad delivers best-in-class R_θJA (75 °C/W) for its size - saves >30% board area vs. SO-8
Fast body diode	trr = 16–24 ns and Qrr = 8.6–13 nC - supports synchronous rectification in buck converters up to 2 MHz
Rugged SOA	Maximum safe operating area supports 33 A pulsed drain current - withstands inrush and short-circuit transients

Applications

Smartphone Power Management

USB Type-C Load Switch

Use Scenario: Controlling battery charging path and system power rails in dual-battery smartphones with tight thickness constraints.

IC Role / Device Role / Timing Role: Low-side load switch isolating main battery from PMIC during sleep mode; switched at 10–100 Hz.

Use Value: 0.045 Ω R_DS(on) limits voltage drop to <190 mV at 4.2 A, preserving battery runtime and reducing thermal stress in <8 mm-thick chassis.

Use Scenario: Enabling/disabling VBUS power delivery in USB Type-C receptacles compliant with USB PD 3.0 specifications.

IC Role / Device Role / Timing Role: High-side power switch controlled by USB controller GPIO; toggled during plug/unplug detection and fault recovery.

Use Value: Logic-level gate threshold ensures clean turn-on with 3.3 V host MCU; fast switching minimizes glitch duration during hot-plug events.

PCMCIA Card Power Control

IoT Sensor Node Load Switching

Use Scenario: Sequencing power to legacy PCMCIA peripherals (e.g., Wi-Fi cards) in industrial laptops with strict EMI and space requirements.

IC Role / Device Role / Timing Role: Standalone load switch placed between main 3.3 V rail and card slot; driven by baseband processor.

Use Value: Micro3™ package height <1.1 mm fits beneath card connector; low R_DS(on) avoids derating at elevated ambient temperatures.

Use Scenario: Isolating sensor subsystems (e.g., gas, humidity) from main MCU during deep-sleep cycles in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch activated only during measurement bursts; duty cycle <0.1%.

Use Value: Gate leakage <±100 nA at ±12 V ensures negligible standby current; R_DS(on) stability over –40 to +85 °C maintains accuracy across operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.042 Ω @ 4.5 V; Q_g = 9.5 nC; same Micro3™ package	Higher V_GS(th) (0.7–1.4 V); slightly lower thermal resistance (70 °C/W)	Preferred where marginally lower on-resistance justifies tighter gate threshold tolerance
AO3400	R_DS(on) = 0.028 Ω @ 4.5 V; Q_g = 12 nC; SOT-23 package but no exposed drain pad	Lower R_DS(on) but higher R_θJA (105 °C/W); no thermal pad - less suitable for sustained 4 A loads	Best for intermittent loads where peak efficiency outweighs thermal limitations

Compared with DMN2004LK-7 and AO3400, IRLML2502TR offers balanced trade-offs: superior thermal performance due to Micro3™ thermal pad, wider V_GS(th) tolerance for robust logic-level operation, and proven reliability in long-lifecycle portable designs - making it optimal for volume production where thermal headroom and supply chain maturity matter.

Availability

IRLML2502TR is available at Aetrix Electronics and suitable for smartphone power management, USB Type-C load switching, and PCMCIA card power control requiring stable component supply and long-term lifecycle support.

Supply support for IRLML2502TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with vertical integration from silicon design to wafer fabrication and packaging.

The IRLML series was developed by International Rectifier (acquired by Infineon in 2015) specifically for ultra-compact, logic-level power switching in battery-powered consumer electronics - emphasizing thermal efficiency, gate drive simplicity, and SMT manufacturability.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRLML2502TR supports 3.4 A continuous drain current at T_A = 70°C with V_GS = 4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Micro3™ package on standard FR-4 PCBs; actual current capability improves with enhanced copper pour or forced airflow.

Does the IRLML2502TR require a gate resistor for stability?

No external gate resistor is required for basic switching, but a 10–47 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance (C_iss = 740 pF). This improves EMI performance and prevents false triggering in noisy environments like USB ports or motor-driven systems.

Can the body diode be used for reverse polarity protection?

Yes - the intrinsic body diode supports reverse current up to 1.3 A continuous (I_S) and 33 A pulsed (I_SM). For reverse polarity protection, connect source to input and drain to load; forward voltage drop is 1.2 V at 1.3 A, so power loss and thermal rise must be evaluated for the target current and duration.

Is the Micro3™ package pin-compatible with standard SOT-23 footprints?

Yes - the Micro3™ package uses identical outline and lead pitch (0.95 mm) as JEDEC SOT-23, allowing drop-in replacement on existing layouts. However, the exposed drain pad on the bottom requires matching thermal land pattern per Infineon's recommended footprint (2.00 × 0.95 mm with 3× thermal vias) to achieve rated R_θJA.

IRLML2502TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

IRLML2502TR FAQ

1.How can I place an order for IRLML2502TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML2502TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML2502TR reliable?

The price and inventory of IRLML2502TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML2502TR is usually 5 days.

3.What payment methods are accepted for IRLML2502TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML2502TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML2502TR?

IRLML2502TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML2502TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML2502TR?

For technical support, including IRLML2502TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML2502TR requirements.

6.How does Aetrix verify that IRLML2502TR is sourced from the original manufacturer or authorized distributors?

All IRLML2502TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML2502TR meets industry standards.

7.What is the process for return or replacement of IRLML2502TR?

All IRLML2502TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLML2502TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML2502TR part is unused and in its original packaging.

Return procedure for IRLML2502TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…